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Method for preparing aluminum nitride crystal by adopting gas phase transmission

A vapor phase transport, aluminum nitride technology, used in chemical instruments and methods, crystal growth, single crystal growth, etc.

Active Publication Date: 2022-03-29
SHENZHEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, aluminum nitride crystals grown by PVT methods still face some problems as substrate materials for deep ultraviolet optoelectronic devices. Among them, the most notable problem is that aluminum nitride has a strong absorption peak at 265nm (4.7eV). The peaks originate from point defects introduced by unintentional doping in the AlN crystal

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  • Method for preparing aluminum nitride crystal by adopting gas phase transmission
  • Method for preparing aluminum nitride crystal by adopting gas phase transmission
  • Method for preparing aluminum nitride crystal by adopting gas phase transmission

Examples

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Embodiment 1

[0027] Example 1: The original material in this embodiment is an aluminum nitride material, and the number of atoms of the nitrogen element of the feedstock is 0.95, the amount of impurity element carbon, oxygen is about 2 × 10 18 cm -3 The crystal growth temperature is 2150 ° C, the growth atmosphere is 99.99% nitrogen, the growth air pressure is 600 mbar, and the specific crystal growth crucible apparatus is image 3 As shown, after the crystal is completed, the crucible cooling rate is 20 ° C / h.

[0028] The AlN crystals grown in this embodiment have a carbon impurity content of about 3 × 10 18 cm -3 The content ratio of nitrogen and aluminum element is about 0.87: 1, the crystal color is amber, and the absorption is 300 nm, and the transmission rate of 230 to 280 nm band is zero.

Embodiment 2

[0029] Example 2: Different in the present embodiment, the content of impurity element carbon and oxygen is about 2 × 10 17 cm -3 The remaining processes are the same.

[0030] Compared with Example 1, the AlN crystals grown in the present embodiment have a carbon impurity content of about 4 × 10. 17 cm -3 The ratio of nitrogen and aluminum element is about 0.9: 1, the crystal color is pale yellow, and the absorption is 210 nm, and the transmittance is 30% in the 230-280 nm band transmission rate.

Embodiment 3

[0031] Example 3: Different from Example 1, the raw material first employs aluminum nitride powder with purity ≥ 97.5%, and is sintered in a high temperature of 2250 ° C for 5 hours in a high temperature furnace of the tungsten system, obtain purity ≥99.99%, carbon impurity content About 4 × 10 17 cm -3 Aluminum nitride, after which a nitrogen ion is used to ion implantation in the raw material, and the ratio of the nitrogen element and the aluminum element in the aluminum nitride raw material is 1.08: 1, the remaining processes are the same.

[0032] Compared to Examples 1 and 2, Aln crystals grown in the present embodiment have a carbon impurity content of about 1 × 10 17 cm -3 The content ratio of nitrogen and aluminum element is about 1: 1, the crystal color is colorless, and its absorption is 210 nm, and the transmission rate of 230 to 280 nm band is 69%.

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Abstract

The invention belongs to the technical field of crystal growth, and particularly relates to a method for preparing aluminum nitride crystals by adopting vapor transport, which comprises the following steps: firstly, fixing an aluminum nitride raw material on the periphery of the inner wall of a crucible to form a crystal growth cavity, and fixing an aluminum nitride seed crystal in the middle of the crystal growth cavity in the crucible; putting the crucible assembled with the aluminum nitride raw material and the aluminum nitride seed crystal into a heating furnace, switching the growth atmosphere in the heating furnace into a pure nitrogen atmosphere, heating until the temperature in the crucible reaches a preset temperature, adjusting until a small temperature gradient of the temperature from the raw material to the seed crystal direction is formed around the seed crystal, and performing crystal growth of the aluminum nitride single crystal, and carrying out heat preservation for a period of time, cooling to room temperature, and opening the crucible to obtain the aluminum nitride crystal. When the raw material is used for growing the aluminum nitride crystal, the generation of defects that carbon occupies nitrogen sites and nitrogen vacancies in the crystal can be inhibited, and the obtained aluminum nitride crystal has very high transmittance in a deep ultraviolet band.

Description

Technical field [0001] The present invention belongs to the field of crystal growth, and is specifically a method of preparing a aluminum nitride crystal by gas phase transmission. Background technique [0002] Deep UV light electronics such as LED (UVC-LED), Deep UV laser (UVC-LD), aikin ultraviolet detector and other devices, in the field of water disinfection, air purification, food safety, biomedical, missile alarm / warning Has a wide range of applications. As the functional layer material of the above device, the current aluminate material epitaxial growth uses sapphire as a substrate material, although sapphire has a higher transmittance in the deep ultraviolet wave section, but is subjected to lattice mismatch and thermal displacement Limit, it is difficult to achieve high quality AlGan epitaxial layer growth, which seriously limits the development and performance of deep ultraviolet optical devices. As one of the important ultra-wide processed semiconductor material mate...

Claims

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Application Information

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IPC IPC(8): C30B29/40C30B23/02
CPCC30B29/403C30B23/02Y02P70/50
Inventor 金雷武红磊覃佐燕李文良
Owner SHENZHEN UNIV
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