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Lead-free thin film with high energy storage density and wide working temperature, capacitor and preparation method of lead-free thin film

A technology with wide operating temperature and high energy storage density, applied in thin film/thick film capacitors, multilayer capacitors, fixed capacitor dielectrics, etc. The effect of polarization, increasing energy storage density, and increasing relaxation properties

Pending Publication Date: 2022-04-01
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to overcome the problems of low energy storage density and low working temperature of lead-free films, the object of the present invention is to provide lead-free films with high energy storage density and wide working temperature, capacitors and preparation methods thereof, so as to improve energy storage density and working temperature range

Method used

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  • Lead-free thin film with high energy storage density and wide working temperature, capacitor and preparation method of lead-free thin film
  • Lead-free thin film with high energy storage density and wide working temperature, capacitor and preparation method of lead-free thin film

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Embodiment 1

[0026] The preparation process of the capacitor of this embodiment is as follows:

[0027] Step 1. Target preparation: for growing BaHf 0.05 Ti 0.95 o 3 The ceramic target of the thin film adopts BaCO with a purity level of 99.99% 3 Powder, HfO 2 Powder and TiO 2 The powder is prepared by ceramic technology according to the ratio; when preparing ceramic targets, the sintering temperature is lower than the phase formation temperature of each system by 100°C.

[0028] Step 2, put the substrate, vacuum: Nb:SrTiO 3 The substrate is placed on the heating table, and the vacuum degree in the deposition chamber is less than 10 by using a mechanical pump and a molecular pump. -5 mbar.

[0029] Step 3. Ventilate and heat up: Infuse 200 mbar of argon gas and oxygen gas mixture with a volume ratio of 1 / 1, then raise the temperature of the sample stage to 700° C., and keep it warm for 10 minutes.

[0030] Step 4. Vacuumize and ventilate: then pump the deposition chamber until the a...

Embodiment 2

[0035] The preparation process of the capacitor of this embodiment is as follows:

[0036] Step 1. Target preparation: for growing BaHf 0.05 Ti 0.95 o 3 The ceramic target of the thin film adopts BaCO with a purity level of 99.99% 3 Powder, HfO 2 Powder and TiO 2 The powder is prepared by ceramic technology according to the ratio; when preparing ceramic targets, the sintering temperature is lower than the phase formation temperature of each system by 100°C.

[0037] Step 2, put the substrate, vacuum: Nb:SrTiO 3 The substrate is placed on the heating table, and the vacuum degree in the deposition chamber is less than 10 by using a mechanical pump and a molecular pump. -5mbar.

[0038] Step 3. Ventilate and heat up: inject 200 mbar of argon-oxygen gas mixture with a volume ratio of 1 / 1, then raise the temperature of the sample stage to 775° C., and keep it warm for 10 minutes.

[0039] Step 4. Vacuumize and ventilate: then pump the deposition chamber until the air pressu...

Embodiment 3

[0044] The preparation process of the capacitor of this embodiment is as follows:

[0045] Step 1. Target preparation: for growing BaHf 0.05 Ti 0.95 o 3 The ceramic target of the thin film adopts BaCO with a purity level of 99.99% 3 Powder, HfO 2 Powder and TiO 2 The powder is prepared by ceramic technology according to the ratio; when preparing ceramic targets, the sintering temperature is lower than the phase formation temperature of each system by 100°C.

[0046] Step 2, put the substrate, vacuum: Nb:SrTiO 3 The substrate is placed on the heating table, and the vacuum degree in the deposition chamber is less than 10 by using a mechanical pump and a molecular pump. -5 mbar.

[0047] Step 3. Ventilate and heat up: inject 200 mbar of argon-oxygen mixed gas with a volume ratio of 1 / 1, then raise the temperature of the sample stage to 850° C., and keep it warm for 10 minutes.

[0048] Step 4. Vacuumize and ventilate: then pump the deposition chamber until the air pressur...

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Abstract

The invention discloses a lead-free thin film with high energy storage density and wide working temperature, a capacitor and a preparation method thereof, the lead-free thin film with high energy storage density and wide working temperature comprises an Nb: SrTiO3 substrate and a thin film, and the thin film is arranged on the surface of the Nb: SrTiO3 substrate; the thin film is a BaHf < x > Ti < 1-x > O < 3 > thin film, wherein x is larger than or equal to 0.05 and smaller than or equal to 0.32. The preparation method comprises the following steps: preparing the BaHf < x > Ti < 1-x > O3 thin film on the surface of the Nb: SrTiO3 substrate by utilizing a ceramic target material of the BaHf < x > Ti < 1-x > O3 thin film in a magnetron sputtering manner, and then annealing to obtain the lead-free thin film with high energy storage density and wide working temperature. The lead-free film with high energy storage density and wide working temperature has the characteristics of high energy storage density and wide temperature range.

Description

technical field [0001] The invention relates to the field of energy storage film materials, in particular to a lead-free film with high energy storage density and wide working temperature, a capacitor and a preparation method thereof. Background technique [0002] Dielectric capacitor is an important energy storage element, which is widely used in various power electronic devices due to its high power density, fast charge and discharge speed and long service life. However, relatively low energy storage density and low operating temperature greatly limit their applications in harsh environments. On the one hand, the current commercial dielectric capacitors can only work below 105 °C, and their energy storage density is about 2 J / cm 3 , but the actual ambient temperature is often higher than this temperature. For example, in a hybrid car, the ambient temperature of the capacitor is about 140°C, so an additional cooling system has to be added, which undoubtedly increases addi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C23C14/35C23C14/58H01G4/12H01G4/33
Inventor 刘明马春蕊陆锐
Owner XI AN JIAOTONG UNIV
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