Color-temperature-adjustable white-light-emitting cadmium-free semiconductor quantum dot fluorescent material and preparation method thereof
A quantum dot and semiconductor technology, applied in the field of white light emitting cadmium-free semiconductor quantum dot fluorescent material and its preparation, can solve problems such as human and environmental hazards
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Embodiment 1
[0037](1) Add 0.010mmol of manganese acetate, 0.050mmol of cuprous iodide, and 0.50mmol of gallium triiodide to a mixed solution of 0.5mL of dodecylmercaptan and 5mL of oleylamine, vacuumize at room temperature, and pass nitrogen gas 3 times, 10 minutes each time; then raise the temperature to 120°C, vacuumize, and pass nitrogen gas for 3 times, 10 minutes each time; raise the temperature to 170°C under nitrogen protection, inject 2.5mL of 1mmol / mL sulfur powder oleylamine solution, and react for 5 minutes. Obtain Mn:Cu-Ga-S quantum dot solution;
[0038] (2) Inject 7.5mL of zinc precursor solution into the Mn:Cu-Ga-S solution obtained in step (1), and keep it at 220°C for 30 minutes, wherein the zinc precursor solution is 0.6mmol / mL zinc The source oleic acid solution, the zinc source is zinc acetate, and the Mn:Cu-Ga-S / ZnS quantum dot solution that is initially coated is obtained; Then inject 12.5mL of the above-mentioned same zinc precursor solution into the Mn:Cu-S / ZnS tha...
Embodiment 2
[0040] (1) Add 0.020mmol of manganese acetate, 0.050mmol of cuprous iodide, and 0.50mmol of gallium triiodide to a mixed solution of 1mL of dodecyl mercaptan and 5mL of oleylamine, vacuumize at room temperature and pass nitrogen gas 5 times, each 20 minutes each time; then raise the temperature to 140°C, and repeat 5 times for evacuation and nitrogen flow, 20 minutes each time; raise the temperature to 180°C under the protection of nitrogen, inject 2mL of 1mmol / mL sulfur powder oleylamine solution, and react for 6 minutes. Obtain Mn:Cu-Ga-S quantum dot solution;
[0041] (2) Inject 4mL of zinc precursor solution into the Mn:Cu-Ga-S solution obtained in step (1), and keep it at 230°C for 30 minutes, wherein the zinc precursor solution is 0.6mmol / mL zinc source Oleic acid solution, zinc source is zinc acetate, obtains the Mn:Cu-Ga-S / ZnS quantum dot solution of primary coating; Then inject 12mL above-mentioned same kind of zinc precursor solution to the Mn of primary coating:Cu-G...
Embodiment 3
[0043] (1) Add 0.030mmol of manganese acetate, 0.050mmol of cuprous iodide, and 0.50mmol of gallium triiodide to a mixed solution of 2.5mL of dodecyl mercaptan and 5mL of oleylamine, vacuumize at room temperature, and pass nitrogen 4 times, 10 minutes each time; then raise the temperature to 130°C, and repeat 3 times for vacuuming and blowing nitrogen, 20 minutes each time; raise the temperature to 190°C under the protection of nitrogen, inject 1.0mL of 1mmol / mL sulfur powder oleylamine solution, and react 5 Minutes, obtain Mn:Cu-Ga-S quantum dot solution;
[0044] (2) Inject 5 mL of zinc precursor solution into the Mn:Cu-Ga-S solution obtained in step (1), and keep it at 220°C for 30 minutes, wherein the zinc precursor solution is 0.6 mmol / mL zinc source Oleic acid solution, zinc source is zinc acetate, obtains the Mn:Cu-Ga-S / ZnS quantum dot solution of primary coating; Then inject 13.5mL above-mentioned same kind of zinc precursor solution to the Mn of primary coating:Cu-Ga ...
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