Power switch based on GaAs pHEMT technology and GaN technology

Abstract

The invention provides a power switch based on a GaAs pHEMT technology and a GaN technology. The driving amplifier part adopts a GaAs pHEMT process, and the switch part adopts a GaN process; compared with other processes, the GaAs pHEMT process has higher electron mobility and excellent power performance, can work at a lower temperature, and provides higher current density and electron mobility, so that the working frequency and gain are improved; compared with a traditional Si power device, the GaN power switch has lower on resistance and faster switching performance, and is one of the optimal choices for high switching frequency and high-efficiency operation. When the switching frequency is increased to MHz level, the soft switching plays an important role in further reducing the switching loss and improving the efficiency; compared with a traditional power switch, the low switching loss can be achieved, and the conduction loss is not remarkably increased.

Description

technical field [0001] The invention belongs to the technical field of integrated circuit power switches, and in particular relates to a power switch based on GaAs pHEMT technology and GaN technology. Background technique [0002] With the rapid development of semiconductor technology, in gallium arsenide pseudo-matched high electron mobility transistor (GaAspHEMT), the InGaAs layer acts as a non-doped GaAs layer, and the GaAs pHEMT can work at a lower temperature, providing a larger The current density and electron mobility increase the operating frequency and gain. Compared with Si, SiC, GaN and other processes, GaAs pHEMT has higher electron mobility and excellent power performance, and it is widely used in the design and manufacture of MMIC DA. [0003] Wide bandgap (WBG) semiconductors such as gallium nitride (GaN) and silicon carbide (SiC) have superior characteristics compared to conventional silicon devices and are considered to be the next generation of power switc...

AI Technical Summary

Problems solved by technology

[0004] High frequency is an effective way to increase the power density of switching converters. Limited by the design and manufacturing technology of power semiconductors, when the switching frequency is increased to a certain level, hard switching converters will have the following problems: 1) The switching loss increases significantly; 2 ) switch stress; 3) electromagnetic radiation and noise

However, the resonant converter will generate high circulating energy, which requires frequency conversion control, and it is difficult to optimize the design of converter parameters

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