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Diamond grinding wheel disc for thinning silicon carbide and preparation method of diamond grinding wheel disc

A diamond grinding wheel and silicon carbide technology, which is applied in the field of abrasive tool manufacturing, can solve the problems of easy scratching on the surface, large environmental pollution, low free grinding efficiency, etc., and achieve the effect of small roughness, low fragmentation rate and good finish.

Pending Publication Date: 2022-05-20
长沙市萨普新材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Thereby solving the problems of low efficiency of silicon carbide crystal using free grinding, easy scratches on the surface, and large environmental pollution.

Method used

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  • Diamond grinding wheel disc for thinning silicon carbide and preparation method of diamond grinding wheel disc
  • Diamond grinding wheel disc for thinning silicon carbide and preparation method of diamond grinding wheel disc
  • Diamond grinding wheel disc for thinning silicon carbide and preparation method of diamond grinding wheel disc

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] The implementation process steps are:

[0039]1. Prepare the raw materials according to the composition ratio in the table below, mix and pass through an 80-mesh sieve, take the undersize, and then mix the undersize in a V-type mixer with a ball-to-material ratio of 1:5 and a speed of 20rpm for 24 hours , to prepare a homogeneous powder mixture.

[0040] components foam diamond Ni powder Al powder Alumina Hollow Ball mass percentage 20ωt.% 50ωt.% 20ωt.% 10ωt.%

[0041] The diamond foam used is a three-type material with an average particle size of 8-10 μm, and the particle size of the aluminum oxide hollow balls used is 100-150 μm.

[0042] 2. Add 6ωt.% paraffin wax molding agent to the powder mixture, stir evenly, sieve, granulate, and put into a steel mold.

[0043] 3. Place the loaded mold in an argon atmosphere at 300°C for 40 minutes for degassing and degreasing, then raise the temperature to 750°C and hold for 90 minutes, press...

Embodiment 2

[0047] The implementation process steps are:

[0048] 1. Prepare the raw materials according to the composition ratio in the table below, mix and pass through an 80-mesh sieve, take the undersize, and then mix the undersize in a V-type mixer with a ball-to-material ratio of 1:5 and a speed of 20rpm for 24 hours , to prepare a homogeneous powder mixture.

[0049] components foam diamond Ni powder Al powder Alumina Hollow Ball mass percentage 20ωt.% 55ωt.% 15ωt.% 10ωt.%

[0050] The diamond foam used is a three-type material with an average particle size of 8-10 μm, and the particle size of the aluminum oxide hollow balls used is 100-150 μm.

[0051] 2. Add 6ωt.% paraffin wax molding agent to the powder mixture, stir evenly, sieve, granulate, and put into a steel mold.

[0052] 3. Place the loaded mold in an argon atmosphere at 300°C for 40 minutes for degassing and degreasing, then raise the temperature to 750°C and hold for 90 minutes, pres...

Embodiment 3

[0056] The implementation process steps are:

[0057] 1. Take the raw materials according to the composition ratio in the table below, mix and pass through a 80-mesh sieve, take the undersize, and then mix the undersize in a V-shaped mixer with a ball-to-material ratio of 1:5 and a speed of 20rpm 24h, a homogeneous powder mixture was prepared.

[0058] components foam diamond Ni powder Al powder Alumina Hollow Ball mass percentage 20ωt.% 60ωt.% 10ωt.% 10ωt.%

[0059] The diamond foam used is a three-type material with an average particle size of 8-10 μm, and the particle size of the aluminum oxide hollow balls used is 100-150 μm.

[0060] 2. Add 6ωt.% paraffin wax molding agent to the powder mixture, stir evenly, sieve, granulate, and put into a steel mold.

[0061] 3. Place the loaded mold in an argon atmosphere at 300°C for 40 minutes for degassing and degreasing, then raise the temperature to 750°C and hold for 90 minutes, press at 150MP...

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Abstract

The invention discloses a diamond grinding wheel disc for silicon carbide thinning and a preparation method thereof.The diamond grinding wheel disc is composed of diamond grinding wheel teeth and an aluminum matrix, and the diamond grinding wheel teeth are prepared from, by mass, 15%-25% of foam diamond, 45%-65% of Ni powder, 10%-30% of Al powder and 5%-15% of aluminum oxide hollow balls; the particle size of the foam diamond is 8-10 microns. The diamond grinding wheel tooth prepared through the method is high in porosity, high in chip containing and discharging capacity, good in sharpness, high in machining efficiency and long in service life, and after silicon carbide is thinned, the surface smoothness is good, the fragment rate is low, and a damaged layer is shallow. Therefore, the problems of low efficiency, easy surface scratch, large environmental pollution and the like when the silicon carbide crystal is subjected to free grinding are solved.

Description

technical field [0001] The invention discloses a diamond grinding wheel disc for silicon carbide thinning and a preparation method thereof, belonging to the field of abrasive abrasive tool manufacturing. Background technique [0002] Silicon carbide materials are widely used in semiconductor lighting. The thermal conductivity of sapphire is 46W / (m.K), the thermal conductivity of single crystal silicon is 150W / (m.K), and the thermal conductivity of silicon carbide is only 490W / (m.K). , high thermal conductivity, good heat dissipation performance, low thermal expansion coefficient, and good stability. Therefore, LEDs using silicon carbide as a substrate have higher lighting brightness, lower energy consumption and longer life, and smaller unit chip area, which has great advantages in high-power LEDs. As the substrate of lighting materials, silicon carbide needs to be cut and thinned. The Mohs hardness of silicon carbide is as high as 9.2. During the grinding process, a lot o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24D3/34B24D3/10B24D18/00
CPCB24D3/346B24D3/342B24D3/10B24D18/009
Inventor 陈帅鹏康希越张乾坤陈豫章
Owner 长沙市萨普新材料有限公司
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