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Transfer method of transition metal chalcogenide two-dimensional material

A transition metal chalcogenide, two-dimensional material technology, used in molybdenum sulfide, climate sustainability, final product manufacturing, etc. The effect of improving form and performance

Active Publication Date: 2022-05-27
NAT UNIV OF DEFENSE TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the transfer process based on PMMA has the following problems: 1) bubbles generated by the long-time etching process may damage the film; Residues will reduce its electrical and optical properties, and are not conducive to the study of its microstructure; 3) The process of removing PMMA usually takes a long time

Method used

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  • Transfer method of transition metal chalcogenide two-dimensional material
  • Transfer method of transition metal chalcogenide two-dimensional material
  • Transfer method of transition metal chalcogenide two-dimensional material

Examples

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Embodiment example

[0086] The following implementation cases are listed figure 1 device, but it does not constitute a necessary limitation of the technical solution of the present invention.

[0087] like figure 1 As shown, the present invention provides a device for utilizing water to transfer two-dimensional MoS2, comprising:

[0088] The device for two-dimensional MoS2 prepared by the water transfer CVD method proposed in the present disclosure mainly includes an iron stand (1), self-locking tweezers (2), a target substrate (3), a growth substrate (4), a U-shaped glass tube (5) and Microsampler (6).

[0089] specifically:

[0090] The water iron stand is used to fix the self-locking tweezers, and the tail of the self-locking tweezers can be glued to the iron stand fixture with double-sided tape. Self-locking forceps are used to hold the target substrate with the surface to be transferred facing down. The surface of the growth substrate is 2D MoS prepared by CVD 2 . The U-shaped tube is...

Embodiment 1

[0091] Example 1: Two-dimensional MoS 2 transfer

[0092] Step 1: Preparation of 2D MoS by Na-salt-assisted CVD 2 preparation:

[0093] Step (1-a): Substrate Pretreatment

[0094] Using a plasma cleaner, the surface of the substrate was treated with oxygen at a power of 60w for 50 seconds, and the silicon wafer (the surface was a layer of 280nm thick amorphous SiO 2 , the following is monocrystalline silicon) surface treatment as a hydrophilic surface. Subsequently, 30 mL of 0.1 mol / L NaCl solution was added dropwise to the surface of the silicon wafer, and then spin-coating was performed at a rotational speed of 4000 rpm. A substrate compounded with sodium chloride is prepared;

[0095] Step (1-b): Two-dimensional MoS 2 Preparative deposition

[0096] The reaction device is a dual-temperature zone tube furnace. Argon gas needs to be introduced into the device as a carrier gas. Along the direction of the carrier gas, the upstream temperature zone furnace is set to heat...

Embodiment 2

[0103] Compared with Example 1, the only difference is that the target substrate is changed to mica, and other operations and parameters are the same as Example 1.

[0104] image 3 a is the use of water transfer method to transfer the monolayer MoS 2 Optical microscope pictures transferred to mica. image 3 b is the use of water transfer method to transfer the monolayer MoS 2 The Raman spectrum transferred to mica indicates that the transferred sample has high quality and high crystallinity.

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PUM

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Abstract

The invention belongs to the technical field of two-dimensional material transfer, and particularly relates to a transition metal chalcogenide two-dimensional material transfer method which comprises the following steps: depositing a transition metal chalcogenide two-dimensional material on the surface of a growth substrate compounded with an additive by adopting a PVD (Physical Vapor Deposition) or CVD (Chemical Vapor Deposition) method to obtain a growth substrate-TMDs; the additive is an alkali metal compound; stripping and transferring the growth substrate-TMDs in a stripping tube; the stripping pipe comprises a stripping end and a water inlet end, the stripping end is provided with a growth substrate-TMDs, and the TMDs face upwards; the upper part of the growth substrate-TMDs is also provided with a receiving substrate; in the stripping process, water is continuously injected into the stripping pipe from the water inlet end, and the growth substrate-TMDs is immersed by means of the lifted water liquid level, so that the TMDs are stripped and transferred to the surface of a receiving substrate along with the lifting of the liquid level. The two-dimensional material is synthesized by adopting an additive-assisted method, and is further combined with the water pipe stripping means, so that the successful transfer of the two-dimensional material can be realized under the condition that a support membrane is not needed, and the transfer effect is improved.

Description

Technical field: [0001] The invention belongs to the field of two-dimensional material preparation, in particular to the field of two-dimensional material transfer. Background technique: [0002] Two-dimensional transition metal chalcogenides (TMDs) such as two-dimensional molybdenum disulfide (MoS) 2 ), have atomic-scale thickness, and possess unique optical and electrical properties that make them promising candidates for applications such as next-generation semiconductor devices and photodetectors. Currently, chemical vapor deposition (CVD) is commonly used to achieve large-scale and high-quality preparation of 2D MoS 2 . and 2D MoS 2 The effective use and study of TiO2 requires its transfer from growth substrates to different target substrates, such as to flexible substrates for wearable device research and to TEM grids for atomic-level structural characterization. Existing transfer methods are mainly based on polymethyl methacrylate (PMMA) wet transfer methods, incl...

Claims

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Application Information

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IPC IPC(8): C01G39/06
CPCC01G39/06C01P2004/03C01P2004/04C01P2002/82C01P2004/02Y02P70/50
Inventor 李守恒王珊珊张辉程海峰
Owner NAT UNIV OF DEFENSE TECH
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