Atomic layer deposition method of cobalt-based oxide film

A technology of oxide thin film and atomic layer deposition, applied in coating, gaseous chemical plating, metal material coating process, etc., to achieve the effect of precise and controllable film thickness, good step coverage and low deposition temperature

Pending Publication Date: 2022-05-27
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, ALD growth film has high requirements on the precursor, which needs to have good stability, high reactivity, good volatility, and cannot corrode or dissolve the film or substrate.

Method used

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  • Atomic layer deposition method of cobalt-based oxide film
  • Atomic layer deposition method of cobalt-based oxide film
  • Atomic layer deposition method of cobalt-based oxide film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Embodiment 1 A kind of atomic layer deposition method of cobalt-based oxide thin film

[0037] (1) Cobalt metal precursor: dicarbonyltrimethylsilylcyclopentadienyl cobalt (TMSCpCo(CO) 2 ,C 10 H 13 CoSiO 2 ), wherein Cp is cyclopentadiene, TMS is trimethylsilyl, and C≡O: carbonyl.

[0038] The chemical structural formula of the cobalt metal precursor is shown below:

[0039]

[0040] (2) co-reactant: ozone;

[0041] (3) Substrate: Si [can also be SiO 2 , glass (glass), sapphire (sapphire), etc.];

[0042] (4) Carrier gas and cleaning gas: high-purity nitrogen;

[0043] (5) Substrate cleaning: first ultrasonically clean with acetone for ten minutes, then ultrasonically clean with absolute ethanol for ten minutes, then ultrasonically clean with deionized water for ten minutes, and finally blow dry with high-purity nitrogen for use

[0044] (6) Open the ALD chamber, place the cleaned substrate in the reaction chamber, and evacuate the chamber to 0hPa; finally, ad...

Embodiment 2

[0051] Example 2 Exploration test of heating temperature and co-reactant species of metal precursor for successful cobalt-based oxide thin film growth

[0052] Experiment 1: Different metal precursors (TMSCpCo(CO) 2 ,C 10 H 13 CoSiO 2 ) Effect of heating temperature on the ALD deposition process of cobalt oxide thin films

[0053] Dicarbonyltrimethylsilylcyclopentadienyl cobalt (TMSCpCo(CO) 2 ,C 10 H 13 CoSiO 2 ) as the metal precursor, ozone as the co-reactant, and Si [can also be SiO 2 , glass (glass), sapphire (sapphire), etc.] as the substrate, with high-purity nitrogen as the carrier gas and cleaning gas. First, the substrate was cleaned by ultrasonic cleaning with acetone for 10 minutes, absolute ethanol for 10 minutes, then ultrasonic cleaning with deionized water for 10 minutes, and finally dried with high-purity nitrogen for use. Then open the ALD chamber, place the cleaned substrate in the reaction chamber, and evacuate the chamber to 0 hPa; finally, adjust ...

Embodiment 3

[0063] Example 3 Exploration test of ALD deposition parameters that can successfully realize the growth of cobalt-based oxide thin films

[0064] Experiment 1: Effect of Pulse Time of Metal Precursor on Cobalt Oxide Thin Film ALD Deposition Process

[0065] The bulk method is the same as that of Test 1 in Example 1, except that the pulse times of the precursors are 1s, 3s, 5s, 7s, 10s, and 15s, respectively.

[0066] Depend on figure 1 It can be seen that at the deposition temperature of 150 °C, the carrier gas flow rate is 100 sccm, the ozone pulse time is 0.5 s, and the purging time is 10 s, when the metal precursor pulse time reaches 10 s, the saturation growth of the cobalt oxide film can be achieved. The growth rate remains stable at about 0.083 nm / cycle (the time when the growth rate reaches saturation can be used as a suitable time for the metal precursor pulse). DescriptionTMSCpCo(CO) 2 The stable deposition of the film can be achieved when the pulse time is 10s, an...

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Abstract

The invention belongs to the technical field of thin film materials, and relates to the technical field of cobalt-based oxide thin films, in particular to an atomic layer deposition method of a cobalt-based oxide thin film, which comprises the following steps: by taking dicarbonyl trimethylsilyl cyclopentadienyl cobalt (TMSCpCo (CO) 2, C10H13CoSiO2) as a metal precursor, ozone as a co-reactant and high-purity nitrogen as a carrier gas and a cleaning gas, carrying out atomic layer deposition on the cobalt-based oxide thin film, thereby obtaining the cobalt-based oxide thin film. Compared with the traditional physical and chemical vapor deposition methods, the method for preparing the cobalt oxide film by adopting the ALD technology has the characteristics of accurate and controllable film thickness, good large-area deposition uniformity, low deposition temperature, good step coverage rate and the like. The invention provides an ALD deposition process based on a novel cobalt metal precursor. The process is suitable for various substrates with different materials and shapes, widens the ALD deposition process of the cobalt oxide film, and provides a research basis for the application of the ALD technology in more fields.

Description

technical field [0001] The invention belongs to the technical field of thin film materials, relates to the technical field of cobalt-based oxide thin films, and in particular relates to an atomic layer deposition method for cobalt-based oxide thin films. Background technique [0002] Cobalt oxide (Co x O y ) is a transition metal oxide with two primary oxidation states (Co 2+ and Co 3+ ), has been widely studied in the fields of sensors, magnetic detection technology, photoelectrochemical water splitting, energy production and storage due to its stable chemical properties, unique magnetic properties, and high electrochemical energy storage capacity. At present, the methods for preparing cobalt oxide mainly include physical vapor deposition, chemical vapor deposition, atomic layer deposition, spin coating, electroplating, electron beam evaporation, spray thermal decomposition, pulsed laser deposition, etc. [0003] Atomic layer deposition (ALD) is one of the most advanced...

Claims

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Application Information

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IPC IPC(8): C23C16/40C23C16/455
CPCC23C16/406C23C16/45525Y02P20/133
Inventor 万志鑫奚斌
Owner SUN YAT SEN UNIV
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