Hollow silicon dioxide as well as preparation method and application thereof

A hollow silicon dioxide and silicon powder technology, applied in the chemical industry, can solve the problems of complex preparation route, low mechanical strength, and many surface voids, and achieve the effects of simple preparation method, high mechanical strength and high application value.

Pending Publication Date: 2022-06-14
SHENZHEN INST OF ADVANCED ELECTRONICS MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] In view of the above-mentioned background technical problems, the present invention provides a hollow silica and its preparation method and application, which solves the problem

Method used

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  • Hollow silicon dioxide as well as preparation method and application thereof
  • Hollow silicon dioxide as well as preparation method and application thereof
  • Hollow silicon dioxide as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0060] 1) Mix 0.5g 50nm spherical elemental silicon powder with 40mL deionized water and ultrasonic water bath for 2h to form a highly dispersed silicon powder dispersion solution;

[0061] 2) The above dispersion is placed in a 100mL PTFE hydrothermal reactor lining, under 600r / min magnetic stirring conditions, slowly add admixonia aqueous solution with a pipette gun with a concentration of 15%, stop the dropwise addition when the pH meter reading is stable at 10, and the added ammonia is about 1mL;

[0062] 3) After mixing evenly, quickly lining the PTFE in the matching stainless steel jacket, and react in the 180 °C blast drying box for 48h;

[0063] 4) The prepared solution was washed 3 times with absolute ethanol and deionized water, and the resulting product was dried in a blast at 140 °C for 4 h and calcined at 1000 °C in a muffle furnace for 8 h.

[0064] Test the resulting sample of the SEM ( Figure 1 ) and TEM ( Figure 2 It was found to be a hollow structure with a parti...

Embodiment 2

[0066] 1) Mix 0.5g 50nm spherical elemental silicon powder with 40mL deionized water and ultrasonic water bath for 2h to form a highly dispersed silicon powder dispersion solution;

[0067]2) The above dispersion is placed in a 100mL PTFE hydrothermal reactor lining, under 600r / min magnetic stirring conditions, slowly add admixonia aqueous solution with a pipette gun with a concentration of 15%, stop the dropwise addition when the pH meter reading is stable at 10, and the added ammonia is about 1mL;

[0068] 3) After mixing evenly, quickly lining the PTFE in the matching stainless steel jacket, and react in the 180 °C blast drying box for 48h;

[0069] 4) The prepared solution was washed 3 times with absolute ethanol and deionized water, and the resulting product was dried at 140 °C blast for 4 h, and placed in a muffle furnace at 800 °C for calcination for 8 h.

[0070] The SEM and TEM of the obtained samples were tested and found to be hollow structures with a particle size of a...

Embodiment 3

[0072] 1) Mix 0.5g 50nm spherical elemental silicon powder with 40mL deionized water and ultrasonic water bath for 2h to form a highly dispersed silicon powder dispersion solution;

[0073] 2) The above dispersion is placed in a 100mL polytetrafluoroethylene hydrothermal reactor lining, under the condition of magnetic stirring of 600r / min, the aqueous ammonia solution of 15% of the concentration prepared by slowly adding ammonia is slowly added with a pipette, and the drop-dosing is stopped when the pH meter reading is stable at 10.4, and the ammonia added is about 1.05mL;

[0074] 3) After mixing evenly, quickly lining the PTFE in the matching stainless steel jacket, and react in the 180 °C blast drying box for 48h;

[0075] 4) The prepared solution was washed 3 times with absolute ethanol and deionized water, and the resulting product was dried in a blast at 140 °C for 4 h and calcined at 1000 °C in a muffle furnace for 8 h.

[0076] The SEM and TEM of the obtained samples were ...

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Abstract

The invention discloses hollow silicon dioxide as well as a preparation method and application thereof. The preparation method comprises the following steps: 1) dispersing monatomic silicon powder in a liquid-phase reaction system to obtain a silicon powder dispersion liquid; and 2) slowly dropwise adding ammonia water into the silicon powder dispersion liquid obtained in the step 1) until the pH value of the reaction system is 10-10.4, and then carrying out hydrothermal reaction. The hollow silicon dioxide is prepared from monatomic silicon powder through interface diffusion, preliminary oxidation and hollowing of silicon atoms and hydroxyl groups in a hydrothermal reaction. The hollow silicon dioxide prepared by utilizing the Kirkendall effect at the interface is compact in surface, has the characteristics of low stress, high mechanical strength and low moisture absorption, and can improve the reliability and reduce the dielectric constant and dielectric loss when being used as a filler of an electronic packaging material; the hollow silicon dioxide provided by the invention has the advantages of simple preparation method, no need of multi-step reaction, low cost and higher application value.

Description

Technical field [0001] The present invention relates to the field of chemical technology, in particular to a hollow silica and preparation methods and applications thereof. Background [0002] With the development of 5G communication technology, the delay, crosstalk and power consumption caused by the parasitic capacitance of interconnection in electronic components have become major hidden dangers restricting the transmission of high-frequency and high-speed 5G signals, and reducing the dielectric constant and dielectric loss of component-mediated electrical materials is an important means to achieve high-frequency and high-speed signal transmission. In order to adapt to the development of high-frequency and high-speed 5G communication technology, the development of low dielectric constant and low dielectric loss materials in the field of packaging materials such as packaging substrates, printed circuit boards, multilayer insulating film, and antenna module flex boards has been ...

Claims

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Application Information

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IPC IPC(8): C01B33/18H01L23/29
CPCC01B33/18H01L23/295H01L23/291C01P2004/34C01P2004/04C01P2004/03C01P2004/62Y02E60/10
Inventor 王宁罗思程陈田田赵涛朱朋莉孙蓉
Owner SHENZHEN INST OF ADVANCED ELECTRONICS MATERIALS
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