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KTP crystal for quasi-phase matching device PPKTP and preparation method of KTP crystal

A quasi-phase and crystal technology, applied in the field of KTP crystal for quasi-phase matching device PPKTP and its preparation, can solve the problems of changing the surface composition and refractive index of KTP, increasing the difficulty of polarization, and inability to complete polarization inversion, etc. Improved optical uniformity, low conductivity, and low absorption

Pending Publication Date: 2022-06-21
SINOMA SYNTHETIC CRYSTALS CO LTD +1
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Problems solved by technology

But on the other hand, its coercive voltage is increased by 5 times, which increases the difficulty of polarization;
[0007] (2) Trivalent ion doping method: Doping Ga during the growth of KTP 3+ 、Al 3+ and other trivalent ions instead of Ti 3+ The conductivity can be reduced by up to 3-4 orders of magnitude, but the doping of trivalent ions locks the lattice and makes the polarization reversal impossible;
But rubidium ion exchange changes the composition and refractive index of the KTP surface

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  • KTP crystal for quasi-phase matching device PPKTP and preparation method of KTP crystal
  • KTP crystal for quasi-phase matching device PPKTP and preparation method of KTP crystal
  • KTP crystal for quasi-phase matching device PPKTP and preparation method of KTP crystal

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preparation example Construction

[0045] A second aspect of the present application provides a method for preparing a KTP crystal with low conductance, low absorption, and high optical uniformity according to the first aspect of the present invention, wherein the preparation steps of the KTP crystal include:

[0046] (1) Synthesize the raw material of KTP crystal, synthesize K 7 P 3 O 11 The raw materials and barium-containing compounds are put into a platinum crucible in the crystal growth furnace, heated and melted at 890-945 °C, and then stirred at this temperature for 45-65 hours to obtain a uniform and stable high-temperature solution;

[0047] (2) Put in KTP seed crystals, and then reduce the temperature to the saturation temperature of 875-920 °C at a rate of 15-50°C / h; after putting in the seed crystals, cooling at a higher speed can reduce the amount of seed crystals dissolved, At the same time, the defects that may exist on the surface of the seed crystal are eliminated, and the quality of the grow...

Embodiment 1

[0063] use figure 1 The crystal growth furnace shown contains 952.1 g of KH in a 4N (99.99%) pure platinum crucible with a diameter of 155 mm, a height of 120 mm and a thickness of 2 mm. 2 PO 4 , 559.0g of TiO 2 , 1668.3g of K 2 HPO 4 , 220.6g of K 2 CO 3 and 34.5g of BaCO 3 . The furnace temperature was raised to 945°C, the raw materials were melted, the temperature was maintained for 48h, and the crucible was rotated to form a uniform and stable high-temperature solution. Insert the KTP seed crystal so that it is in contact with the liquid surface. The temperature was lowered to the saturation point of 920°C within 30min, and then lowered to 880°C at a rate of 0.01-0.15°C / h, and water-white KTP crystals with a size of 40mm×35mm×30mm were grown, see figure 2 , after orientation, cutting and polishing, a z-cut KTP wafer with a size of 35mm × 25mm × 1mm is obtained, that is, the wafer obtained by cutting perpendicular to the z-axis direction of the crystal, see imag...

Embodiment 2

[0065] use figure 1 The crystal growth furnace shown contains 882.1 g of KH in a 4N-purity platinum crucible with a diameter of 155 mm, a height of 120 mm, and a thickness of 2 mm. 2 PO 4 , 517.9g of TiO 2 , 1766.4g of K 2 HPO 4 , 233.6g of K 2 CO 3 and 20.5g of BaF 2 . The furnace temperature was raised to 920°C, the raw materials were melted, the temperature was maintained for 48h, and the crucible was rotated to form a uniform and stable high-temperature solution. Insert the KTP seed crystal so that it is in contact with the liquid surface. The temperature was lowered to the saturation point of 890°C within 45min, and then lowered to 840°C at a rate of 0.01-0.2°C / h, and a water-white KTP crystal with a size of 40mm×35mm×30mm was grown, and the size was obtained by orientation, cutting and polishing. It is a z-cut KTP wafer of 35mm×25mm×1mm, and its conductivity is measured to be 3×10 -10 S / cm, optical uniformity Δn is 4.5×10 -6 / cm, 532nm laser absorption is 5500...

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Abstract

According to the KTP crystal for the quasi-phase matching device PPKTP and the preparation method of the KTP crystal, the KTP crystal is prepared through a fluxing agent method, K7P3O11 serves as a fluxing agent, a small amount of Ba < 2 + > is doped, the K < + > vacancy concentration in KTP is greatly reduced, and the conductivity of KTP is reduced. Meanwhile, compared with a traditional K6P4O13 fluxing agent, the reaction degree of K7P3O11 and a platinum crucible is smaller, so that 532nm laser absorption of the prepared KTP crystal is greatly reduced. The performance of the low-conductivity, low-absorption and high-optical-uniformity KTP crystal provided by the invention can completely meet the requirement for manufacturing a quasi-phase matching device PPKTP.

Description

Technical field [0001] The present invention relates to the technical field of crystal materials, and in particular to a KTP crystal for a quasi-phase matching device PPKTP and a preparation method thereof. Background technique [0002] Periodically polarized KTiOPO for quasi-phase matching devices 4 (KTP for short) crystal (Periodically poledKTP, PPKTP) is a brand new nonlinear optical crystal that can achieve all nonlinear application requirements within the entire KTP crystal light transmission band without being limited by the conventional angular phase matching of KTP crystals , broadening the scope of application. At the same time, PPKTP crystal devices can use the largest nonlinear optical coefficient of KTP crystal to improve conversion efficiency. [0003] KTP is a well-known excellent nonlinear optical crystal. It has large nonlinear coefficient, wide transmission range, high laser damage resistance threshold, and good angular bandwidth and temperature bandwidth....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B9/12C30B29/22H01S3/00
CPCC30B9/12C30B29/22H01S3/0092
Inventor 陈建荣王国影李辉王海丽张阳
Owner SINOMA SYNTHETIC CRYSTALS CO LTD
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