2DEG ultraviolet detector with symmetric interdigital structure and preparation method thereof

Abstract

The invention discloses a 2DEG ultraviolet detector with a symmetric interdigital structure and a preparation method, and belongs to the technical field of semiconductor device manufacturing. The ultraviolet detector sequentially comprises a substrate layer, an AlN buffer layer, a GaN channel layer, an AlGaN barrier layer and a metal electrode layer from bottom to top. According to the invention, the 2DEG electrode with the symmetric interdigital structure is adopted, valence band offset in an AlGaN / GaN heterostructure is utilized, hole accumulation on an interface causes reduction of potential barrier energy when electrons enter a conduction band, so that the defects of low response and low quantum efficiency of an ultraviolet detector with a traditional device structure are overcome, the responsivity and gain are improved, a 2DEG conductive channel is disconnected through GaN, and the quantum efficiency of the ultraviolet detector is improved. The dark current of the device is reduced, the light-dark current ratio is improved, the response time is effectively reduced, and meanwhile, the sensitivity and the signal-to-noise ratio of the device are improved. In addition, the manufacturing process is simple, monolithic integration is facilitated, and then chip integration of an optical sensing system can be achieved.

Description

technical field [0001] The invention relates to a 2DEG ultraviolet detector with a symmetrical interdigital structure and a preparation method, and belongs to the technical field of semiconductor device manufacturing. Background technique [0002] With the wide application of UV photodetectors in industrial production, environmental monitoring, military ballistic guidance prediction strategy, biomedical research, medicine, and UV astronomy, semiconductor UV photodetectors have attracted extensive attention in the field of photodetectors. The performance of UV photodetectors has a crucial impact on the reliability and accuracy of UV signal detection. Therefore, in most applications, an ideal UV detector should exhibit high responsivity to maximize signal, and low dark current to minimize quiescent power. [0003] In recent years, with the development of semiconductor materials, Al(GaN) has become a typical representative of the third-generation wide-bandgap semiconductor mat...

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Problems solved by technology

[0005] In order to solve the problems of low sensitivity, low signal-to-noise ratio, and long response time of current ultraviolet detectors, the present invention provides a 2DEG ultraviolet detector with a symmetrical interdigitated structure, which uses a GaN channel layer to disconnect the 2DEG conductive channel, A symmetrical interdigitated 2DEG electrode is formed to reduce the dark current of the device while obtaining a high response. The ultraviolet detector includes from bottom to top: a substrate layer, an AlN buffer layer, a GaN channel layer, an AlGaN barrier layer, and metal electrode layer;

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