Preparation method of functional material film and preparation method of quantum dot light-emitting diode
A technology of quantum dot luminescence and functional materials, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc. It can solve the problems of easy precipitation of solute particles, uneven film layer, unstable quality, etc., and achieve good surface flatness , improve repeatability, reduce the effect of variance
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[0025] The first aspect of the embodiments of the present application provides a method for preparing a functional material film, such as figure 1 As shown, the preparation method comprises the following steps:
[0026] S01: Provide substrate;
[0027] S02: depositing a functional material solution on the substrate, and performing annealing treatment in a solvent vapor atmosphere to obtain the functional material film;
[0028] Wherein, the solvent forming the solvent vapor can dissolve the functional material.
[0029] The present application provides a method for preparing a functional material film. After depositing a functional material solution on a substrate, annealing is performed in a solvent vapor atmosphere, and both the solvent forming the solvent vapor and the solvent in the functional material solution can dissolve The functional material, so during the annealing process, the functional material on the surface of the functional material layer, that is, the solut...
Embodiment 1
[0076] A quantum dot light-emitting diode, from bottom to top, comprises: an ITO glass substrate (anode substrate), a hole transport layer, a quantum dot light-emitting layer, an electron transport layer and a cathode. Its preparation method comprises the following steps:
[0077] Ⅰ. First, provide an ITO glass substrate and a 10 mg / ml TFB dichlorobenzene solution.
[0078] Take 0.1 ml of TFB dichlorobenzene solution, drop it on top of the ITO substrate, and spin-coat at 3000 rpm for 30 s to prepare a hole transport layer on the ITO substrate. After the spin coating is completed, transfer the sheet to a two-compartment petri dish, add 15 ml of dichlorobenzene (one for each sheet and solvent) to the petri dish, seal the petri dish, and transfer it to a 125°C heating plate. After standing at a constant temperature for 60 min, solvent vapor annealing was performed. After the dichlorobenzene vapor annealing, the wafer was transferred to a 125° C. heating plate, heat-treated for ...
Embodiment 2
[0085] A quantum dot light-emitting diode, from bottom to top, comprises: an ITO glass substrate (anode substrate), a hole transport layer, a quantum dot light-emitting layer, an electron transport layer and a cathode. Its preparation method comprises the following steps:
[0086] I. First, an ITO glass substrate and a 10 mg / ml TFB toluene solution are provided.
[0087] Take 0.1 ml of TFB toluene solution, drop it on top of the ITO substrate, and spin-coat at 3000 rpm for 30 s to prepare a hole transport layer on the ITO substrate. After the spin coating is completed, transfer the film to a two-compartment petri dish, add 15 ml of toluene (one space for each film and solvent) into the petri dish, seal the petri dish, and transfer it to a heating plate at 110 °C. Set 60min, carry out solvent vapor annealing. After the dichlorobenzene vapor annealing, the wafers were transferred to a 110° C. heating plate, heat treated for 30 min, and the residual solvent was removed to compl...
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Abstract
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