Ru-Sb-Te alloy sputtering target material suitable for being used as long-storage phase change storage medium and preparation method of Ru-Sb-Te alloy sputtering target material

A ru-sb-te, sputtering target technology, applied in the field of alloy sputtering target, phase change storage, powder metallurgy, can solve unsatisfactory problems, achieve easy operation, good uniformity and density, improve The effect of low phase transition temperature

Pending Publication Date: 2022-07-08
昆明贵研新材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, the 10-year data retention temperature and threshold transition speed are indicators of system stability and data reading speed, respectively. It is required to be higher than 85°C for embedded memory applications, and higher than 120°C for automotive electronics applications. , and currently Ge 2 Sb 2 Te 5 The 10-year data retention temperature of the system is only 80°C, and the threshold transition speed is only on the order of tens of nanoseconds, which cannot meet the requirements of automotive electronics and other fields at all.

Method used

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  • Ru-Sb-Te alloy sputtering target material suitable for being used as long-storage phase change storage medium and preparation method of Ru-Sb-Te alloy sputtering target material
  • Ru-Sb-Te alloy sputtering target material suitable for being used as long-storage phase change storage medium and preparation method of Ru-Sb-Te alloy sputtering target material
  • Ru-Sb-Te alloy sputtering target material suitable for being used as long-storage phase change storage medium and preparation method of Ru-Sb-Te alloy sputtering target material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Using 4N (purity of 99.99%) Ru, Sb, Te three elemental powders as raw materials, after passing through a 200-mesh standard sieve, according to the chemical formula Ru 5 (Sb 2 Te) 95 Ingredients, wherein: Ru is added according to the stoichiometric ratio, Sb is excessive by 4 wt.%, and Te is excessive by 14 wt.%. The mixed powder is processed by planetary ball milling. The ball milling process is: the ratio of ball to material is 2:1, the rotation speed is 150r / min, and the time is 3h. After ball milling and mixing, put the mixed powder into a quartz tube and seal it in a vacuum with a vacuum degree of 1×10 -4 Pa, placed in a resistance furnace and sintered at 650°C for 3h to obtain RST alloy powder raw materials; the alloy powder was put into a graphite mold with a diameter of 50mm for vacuum hot pressing, the sintering temperature was 550°C, the pressure was 40MPa, and the time was 3h. After grinding with a silicon carbide wheel, a Ru of Ф50×5mm was obtained 5 (Sb ...

Embodiment 2

[0035] Using 4N (purity of 99.99%) Ru, Sb, Te three elemental powders as raw materials, after passing through a 200-mesh standard sieve, according to the chemical formula Ru 1 (Sb 2 Te) 99 Ingredients, wherein: Ru is added according to the stoichiometric ratio, Sb is excessive by 2 wt.%, and Te is excessive by 6 wt.%. The mixed powder is treated by planetary ball milling. The ball milling process is: the ratio of ball to material is 1:1, the rotation speed is 100r / min, and the time is 1h. After ball milling and mixing, put the mixed powder into a quartz tube and seal it in a vacuum with a vacuum degree of 1×10 -4 Pa, placed in a resistance furnace and sintered at 600 °C for 1 h to obtain RST alloy powder raw materials; the alloy powder was put into a graphite mold with a diameter of 50 mm for hot isostatic pressing, the sintering temperature was 450 ° C, the pressure was 100 MPa, and the time was 3 h . Subsequently, the corundum grinding wheel was used to obtain Ru with a ...

Embodiment 3

[0037] Using 4N (purity of 99.99%) Ru, Sb, Te three elemental powders as raw materials, after passing through a 200-mesh standard sieve, according to the chemical formula Ru 3 (Sb 2 Te) 97 Ingredients, wherein: Ru is added in a stoichiometric ratio, Sb is excessive by 4 wt.%, and Te is excessive by 8 wt.%. The mixed powder is processed by planetary ball milling. The ball milling process is: the ratio of ball to material is 2:1, the rotation speed is 150r / min, and the time is 3h. After ball milling and mixing, put the mixed powder into a quartz tube and seal it in a vacuum with a vacuum degree of 1×10 -4 Pa, placed in a resistance furnace and sintered at 700°C for 2h to obtain the raw material of RST alloy powder; the alloy powder was put into a graphite mold with a diameter of 50mm for vacuum hot pressing, the sintering temperature was 500°C, the pressure was 50MPa, and the time was 2h. Subsequently, the silicon carbide grinding wheel was used to obtain Ru with a diameter o...

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Abstract

The invention discloses a high-performance Ru-Sb-Te alloy sputtering target material suitable for being used as a long-storage phase change storage medium. The Ru-Sb-Te alloy sputtering target material is an alloy target material composed of raw materials including ruthenium Ru, antimony Sb and tellurium Te according to the chemical formula Rux (Sb2Te) 100-x, x is the atomic percent of the Ru element, and x is larger than or equal to 1 and smaller than or equal to 10; in particular x is 5 or 8; the raw material is a compound of three elementary metals of Ru, Sb and Te or any two elements. The preparation method comprises the following steps: taking ruthenium, antimony, tellurium or compounds of any two elements as raw materials, and preparing Ru-Sb-Te alloy powder through a casting method; a target blank is obtained through mechanical crushing and pressure sintering, and finally the target is obtained through machining and forming. By adding ruthenium, the defects of low phase change temperature, poor thermal stability and the like of the Sb2Te compound are overcome; through powder preparation and pressure sintering after smelting, a sputtering target material with good uniformity and high density is obtained, and the defects that a target material prepared through direct fusion casting is multiple in smelting defect, coarse in grain, poor in machinability and the like are overcome; and the high requirement of the phase change storage field on the RST target material is fully met.

Description

technical field [0001] The invention belongs to the technical field of powder metallurgy, further belongs to the technical field of alloy sputtering targets, and further belongs to the technical field of phase change storage, in particular to a Ru-Sb-Te alloy sputtering target suitable for long-term storage phase change storage medium and its preparation method. Background technique [0002] Phase-change memory material is a new type of non-volatile random storage method based on chalcogenides, which has the advantages of non-volatility, fast reading speed, and good thermal stability. The mechanism is to realize the reading and storage of information through the resistance difference between the amorphous state and the crystal through the temperature difference of the phase change material. In the prior art, phase-change memory films are mainly prepared by magnetron sputtering, which has the characteristics of stable performance and strong operability. [0003] Phase-chang...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C22C12/00C22C1/02B22F9/04B22F3/15B22F3/14B22F3/24H01L45/00
CPCC23C14/3407C23C14/3414C22C12/00C22C1/02B22F9/04B22F3/15B22F3/14B22F3/24B22F2009/043B22F2003/247H10N70/8828Y02E60/14
Inventor 王传军施晨琦闻明沈月许彦亭李思勰巢云秀谭志龙管伟明
Owner 昆明贵研新材料科技有限公司
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