High-temperature and high-pressure silicon carbide printed circuit board heat exchanger and preparation method thereof
A printed circuit board, high temperature and high pressure technology, applied in the direction of indirect heat exchangers, heat exchanger types, heat exchange equipment, etc., can solve the problems of difficult industrial scale-up, no general design standards, and no wide application
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Embodiment example 1
[0030] The carbon powder and silicon powder are made into mixed powder according to the molar ratio of 1:1, and the grinding ball and the grinding powder are packaged in an argon gas tank according to the mass ratio of 30:1, and the mechanical ball milling is carried out on a ball mill, and the average grain size is obtained after 1 day. 50nm silicon carbide powder.
[0031] Add the alcoholic solution of o-methylcellulose or polyvinyl alcohol as a binder, and then form a blank in a steel film with a pressure of 70MPa. Sintered under argon for 3 hours.
[0032] Using the diamond sawing method, the holes and microchannels of each component were carved on the silicon carbide billet, and then placed in a high-temperature sintering furnace again, the temperature was kept at 1900 ° C, and sintered for 2 hours under flowing argon gas of 1 atm.
[0033] Take out the sintered silicon carbide, grind it flat, and wet-process the ground silicon carbide. Then, the ion system is used to a...
Embodiment example 2
[0036] The carbon powder and silicon powder are made into mixed powder according to the molar ratio of 1:1, and the grinding ball and the grinding powder are packaged in an argon gas tank according to the mass ratio of 30:1, and the mechanical ball milling is carried out on a ball mill, and the average grain size is obtained after 1 day. 100nm silicon carbide powder.
[0037] Add the alcoholic solution of o-methylcellulose or polyvinyl alcohol as a binder, and then form a blank in a steel film with a pressure of 100MPa. Sintered under argon for 3 hours.
[0038] Using the diamond sawing method, the holes and microchannels of each component are carved on the silicon carbide blank, and then placed in a high-temperature sintering furnace again, the temperature is kept at 2200 ° C, and sintered for 2 hours under flowing argon gas of 1 atm.
[0039] Take out the sintered silicon carbide, grind it flat, and wet-process the ground silicon carbide. Then the ion system is used to act...
Embodiment example 3
[0042] The carbon powder and silicon powder are made into mixed powder according to the molar ratio of 1:1, and the grinding ball and the grinding powder are packaged in an argon gas tank according to the mass ratio of 30:1, and the mechanical ball milling is carried out on a ball mill, and the average grain size is obtained after 1 day. 200nm silicon carbide powder.
[0043]Add the alcoholic solution of o-methylcellulose or polyvinyl alcohol as a binder, and then form a blank in a steel film with a pressure of 200MPa. Sinter under flowing argon for 3 hours.
[0044] Using the diamond sawing method, the holes and microchannels of each component are carved on the silicon carbide blank, and then placed in a high-temperature sintering furnace again, the temperature is kept at 2200 ° C, and sintered for 2 hours under flowing argon gas of 1 atm.
[0045] Take out the sintered silicon carbide, grind it flat, and wet-process the ground silicon carbide. Then, the ion system is used ...
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Abstract
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