Preparation method of high-dielectric PI/PVDF composite film

A composite film and high dielectric technology, applied in the field of nanocomposite film preparation, can solve the problems of high temperature, low breakdown field strength of polymer composite film, increased energy consumption, etc., to achieve energy density improvement, avoid energy consumption, high The effect of breakdown field strength

Pending Publication Date: 2022-07-12
HARBIN UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] 2. The breakdown field strength of the polymer composite film is low
[0010] 3. The temperature required for the reaction is too high
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Method used

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  • Preparation method of high-dielectric PI/PVDF composite film
  • Preparation method of high-dielectric PI/PVDF composite film
  • Preparation method of high-dielectric PI/PVDF composite film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Embodiment 1: PI / PVDF composite film 1, the concrete operation steps are as follows:

[0043] 1) Disperse 4.00 grams of 4,4'-diaminodiphenyl ether in 50 milliliters of N,N'-dimethylacetamide, then divide 4.36 grams of pyromellitic dianhydride into 8 equal parts, Add in batches, and the time interval of each addition is at least 10 minutes to obtain product 1;

[0044] 2) At room temperature, 1.35 grams of PVDF was dissolved in 12 milliliters of N,N'-dimethylacetamide, and the product 2 with a solid content of 10.67 percent was obtained after processing under stirring conditions;

[0045] 3) at room temperature, the product 2 is divided into 5 equal parts, and after being added to the product 1 in batches, stirring is carried out, so that the product 2 and the product 1 are evenly mixed, and the interval for adding each batch is not less than 10 minutes, and then obtain product 3;

[0046] 4) The product 3 is processed into a film with a thickness of 400-500 microns by...

Embodiment 2

[0049] Embodiment 2: PI / PVDF composite film 2, the concrete operation steps are as follows:

[0050] 1) Disperse 4.00 grams of 4,4'-diaminodiphenyl ether in 50 milliliters of N,N'-dimethylacetamide, then divide 4.36 grams of pyromellitic dianhydride into 8 equal parts, Add in batches, and the time interval of each addition is at least 10 minutes to obtain product 1;

[0051] 2) At room temperature, 2.55 grams of PVDF was dissolved in 11 milliliters of N,N'-dimethylacetamide, and the product 2 with a solid content of 19.76 percent was obtained after processing under stirring conditions;

[0052] 3) at room temperature, the product 2 is divided into 5 equal parts, and after being added to the product 1 in batches, stirring is carried out, so that the product 2 and the product 1 are evenly mixed, and the interval for adding each batch is not less than 10 minutes, and then obtain product 3;

[0053] 4) The product 3 is processed into a film with a thickness of 400-500 microns by...

Embodiment 3

[0055] Embodiment 3: PI / PVDF composite film 3, concrete operation steps are as follows:

[0056] 1) Disperse 4.00 grams of 4,4'-diaminodiphenyl ether in 50 milliliters of N,N'-dimethylacetamide, then divide 4.36 grams of pyromellitic dianhydride into 8 equal parts, Add in batches, and the time interval of each addition is at least 10 minutes to obtain product 1;

[0057] 2) At room temperature, 3.94 grams of PVDF was dissolved in 23 milliliters of N,N'-dimethylacetamide, and the product 2 with a solid content of 15.40 percent was obtained after processing under stirring conditions;

[0058] 3) at room temperature, the product 2 is divided into 5 equal parts, and after being added to the product 1 in batches, stirring is carried out, so that the product 2 and the product 1 are evenly mixed, and the interval for adding each batch is not less than 10 minutes, and then obtain product 3;

[0059] 4) The product 3 is processed into a film with a thickness of 400-500 microns by the...

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Abstract

The invention discloses a preparation method of a high-dielectric polyimide/polyvinylidene fluoride (PI/PVDF) composite film. The preparation method comprises the following steps: firstly, preparing a PI precursor from 4, 4 '-diaminodiphenyl ether and pyromellitic dianhydride, then adding PVDF into the PI precursor in batches, and carrying out low-temperature thermal imidization in a temperature range of 80-200 DEG C; the method can avoid introduction of holes caused by separation of PI and PVDF due to high-temperature treatment, and is an effective method for preparing the PI/PVDF composite film with high dielectric constant and high dielectric strength. Compared with a traditional pure PI film prepared through high-temperature (200 DEG C or above) thermal imidization, when the test frequency is 1000 Hz, the relative dielectric constant of the PI/PVDF composite film with the mass fraction of 15% can reach 4.68 and is 1.51 times that of pure PI; and the energy storage density is 2.68 Joules/cubic centimeter and is 1.49 times of that of pure PI.

Description

technical field [0001] The invention relates to the technical field of nano composite film preparation, and relates to a preparation method of a high dielectric polyimide / polyvinylidene fluoride (PI / PVDF) composite film. Background technique [0002] With the rapid development of science and technology, the demand for electrical energy storage in human society has increased year by year. Compared with various battery devices, dielectric capacitors have the advantages of fast charging and discharging speed, high power efficiency and long cycle life. They are important equipment in high-power pulse technology and can be used in hybrid vehicles, solar energy converters, and wearable electronic devices And biomedical equipment systems and other fields. At present, commercial dielectric energy storage devices are mainly prepared from biaxially oriented polypropylene (BOPP) as the base material. This is due to the high dielectric strength and low dielectric loss of BOPP, which c...

Claims

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Application Information

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IPC IPC(8): C08J5/18C08L79/08C08L27/16
CPCC08J5/18C08J2379/08C08J2427/16Y02E60/13
Inventor 林家齐王宇杨文龙刘欣美
Owner HARBIN UNIV OF SCI & TECH
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