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Sb2O3 thin film material, method for preparing Sb2O3 thin film material based on sol-gel method and application of Sb2O3 thin film material

A technology of thin film material and gel method, which is applied in metal material coating process, liquid chemical plating, coating, etc. It can solve the problem that the evaporation process is not easy to control the thickness, it is not suitable for large-scale production, and the film layer is easy to fall off and other problems, to achieve the effect of convenient film thickness, good compactness and high electron mobility

Pending Publication Date: 2022-07-22
南京卡巴卡电子科技有限公司
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  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the evaporation process is not easy to control the thickness, it is not suitable for large-scale production, and the film layer is easy to fall off

Method used

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  • Sb2O3 thin film material, method for preparing Sb2O3 thin film material based on sol-gel method and application of Sb2O3 thin film material
  • Sb2O3 thin film material, method for preparing Sb2O3 thin film material based on sol-gel method and application of Sb2O3 thin film material
  • Sb2O3 thin film material, method for preparing Sb2O3 thin film material based on sol-gel method and application of Sb2O3 thin film material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Preparation of Sb based on sol-gel method 2 O 3 A method of thin film material, the method comprising the steps of:

[0027] 1) Preparation of Sb 2 O 3 precursor solution, the C 6 H 9 O 6 The Sb raw material was dissolved in a mixed liquid at 100°C with a volume ratio of glacial acetic acid and deionized water of 1:1, mixed and stirred for 40 minutes, and left for 20 hours to obtain Sb 2 O 3 precursor solution; the Sb 2 O 3 The concentration of the precursor solution is 0.3mol / L;

[0028] 2) The Sb obtained in step 1) 2 O 3 The precursor solution was spin-coated on the substrate at 1500r / min for 30s to obtain a wet film;

[0029] 3) The wet film obtained after spin coating in step 2) was first evaporated to dryness at 90°C for 15min, then heat-treated at 400°C for 18min, taken out and cooled to room temperature to obtain a layer of incompletely crystallized Sb 2 O 3 film;

[0030] 4) Repeat steps 2) and 3) multiple times to obtain 15 layers of incompletel...

Embodiment 2

[0033] Preparation of Sb based on sol-gel method 2 O 3 A method of thin film material, the method comprising the steps of:

[0034] 1) Preparation of Sb 2 O 3 precursor solution, the N 3 O 9 The Sb raw material was dissolved in a mixed liquid at 110°C, the volume ratio of glacial acetic acid and deionized water was 1:1, mixed and stirred for 30 minutes, and left for 25 hours to obtain Sb 2 O 3 precursor solution; the Sb 2 O 3 The concentration of the precursor solution is 0.3mol / L;

[0035] 2) The Sb obtained in step 1) 2 O 3 The precursor solution was spin-coated on the substrate at 1500r / min for 35s to obtain a wet film;

[0036] 3) The wet film obtained after spin coating in step 2) was first evaporated to dryness at 95°C for 12min, then heat-treated at 450°C for 15min, taken out and cooled to room temperature to obtain a layer of incompletely crystallized Sb 2 O 3 film;

[0037] 4) Repeat steps 2) and 3) multiple times to obtain 12 layers of incompletely crysta...

Embodiment 3

[0040] Preparation of Sb based on sol-gel method 2 O 3 A method of thin film material, the method comprising the steps of:

[0041] 1) Preparation of Sb 2 O 3 precursor solution, the C 6 H 9 O 6 The Sb raw material was dissolved in a mixed liquid at 120°C with a volume ratio of glacial acetic acid and deionized water of 1:1, mixed and stirred for 20 minutes, and left for 30 hours to obtain Sb 2 O 3 precursor solution; the Sb 2 O 3 The concentration of the precursor solution is 0.3mol / L;

[0042] 2) The Sb obtained in step 1) 2 O 3 The precursor solution was spin-coated on the substrate at a speed of 1500r / min for 40s to obtain a wet film;

[0043] 3) The wet film obtained after spin coating in step 2) was first evaporated to dryness at 100°C for 10min, then heat-treated at 500°C for 12min, taken out and cooled to room temperature to obtain a layer of incompletely crystallized Sb 2 O 3 film;

[0044] 4) Repeat steps 2) and 3) multiple times to obtain 12 layers of...

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Abstract

The invention provides a Sb2O3 thin film material, a method for preparing the Sb2O3 thin film material based on a sol-gel method and application, and belongs to the field of electronic materials and components. The preparation method comprises the following steps: spin-coating a Sb2O3 precursor solution on a substrate to obtain a wet film; the prepared wet film is evaporated to dryness for 10-15 min at the temperature of 80-120 DEG C, then subjected to heat treatment for 5-15 min at the temperature of 300-400 DEG C, taken out and cooled to the room temperature, and a layer of Sb2O3 film which is not completely crystallized is obtained; repeating the steps for multiple times to obtain a plurality of layers of Sb2O3 films which are not completely crystallized; and the film is crystallized for 0.5-2 h in the air atmosphere at the temperature of 450-600 DEG C, a completely crystallized Sb2O3 film is obtained, and the film with the advantages of being high in purity, good in compactness, small in average grain size, high in electron mobility and the like is obtained.

Description

technical field [0001] The invention relates to the field of electronic materials and devices, in particular to Sb 2 O 3 Thin film materials and preparation of Sb based on sol-gel method 2 O 3 Methods for thin film materials. Background technique [0002] Two-dimensional (2D) semiconductors are a potential channel material for future field-effect transistors (FETs) with high mobility and gate controllability. Two-dimensional materials have atomic-level thickness and excellent optoelectronic properties, and have broad application prospects in the field of next-generation optoelectronic devices. However, when integrating two-dimensional materials with traditional dielectric materials, the dangling bonds and disordered states on the surface of the dielectric materials will seriously affect the properties of the two-dimensional materials, making the device performance far inferior to the intrinsic properties of the two-dimensional materials. [0003] The predecessors took a...

Claims

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Application Information

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IPC IPC(8): C23C18/12H01L29/51
CPCC23C18/1216C23C18/1254H01L29/517
Inventor 李欣芮何秋蔚赵雨杰陈雪彭彪林刘来君
Owner 南京卡巴卡电子科技有限公司
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