Nanocrystal TaWMoCrZr refractory high-entropy alloy coating and preparation method thereof
A high-entropy alloy and refractory technology, applied in metal material coating process, coating, vacuum evaporation plating, etc., can solve the problems of poor high-temperature oxidation resistance and limited application, and achieve enhanced plasticity, improved mechanical properties and The effect of antioxidant properties
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[0029] The preparation method of the above-mentioned TaWMoCrZr refractory high-entropy alloy coating comprises the following steps:
[0030] Step 1: Polish the substrate with 600#, 1000#, 1500#, 2000# sandpaper in turn.
[0031] The base body is a steel base body or a single crystal silicon base body.
[0032] Step 2: Take the polished substrate and ultrasonically clean it in acetone and anhydrous ethanol for 10 minutes in turn and dry it to ensure that the surface of the substrate is clean and free from foreign particles such as stains and dust. layer-substrate adhesion.
[0033] Step 3: Fix the ultrasonically cleaned substrate on the substrate, automatically accompany it into the magnetron sputtering coating chamber, and evacuate until the vacuum degree of the back is 4.0×10 -4 Below Pa, using a power of 200W, an air flow of 60sccm, and etching for 5 minutes is beneficial to improve the interface bonding between the coating and the substrate.
[0034] Step 4: A TaWMoCrZr ...
Embodiment 1
[0039] Step 1: The polished single-crystal silicon substrate was ultrasonically cleaned in acetone and absolute ethanol for 10 minutes, and dried with a hair dryer.
[0040] Step 2: Fix the single crystal silicon substrate on the base plate, and then automatically accompany it into the vacuum coating chamber, and vacuumize until the vacuum degree of the back is lower than 4.0×10 -4 Pa.
[0041] Step 3: After vacuuming, the power is 200W, the air flow is 60sccm, and the etching is performed for 5 minutes.
[0042] Step 4: A TaWMoCrZr refractory high-entropy alloy coating is prepared by co-sputtering a TaWMoCr alloy target and a Zr target.
[0043]Two TaWMoCr alloy targets were sputtered with a DC power supply. The purity of the TaWMoCr alloy target was 99.9wt.%, (Ta:W:Mo:Cr=29:29:23:19at.%), the power was 100W, and the purity of the Zr target was 99.9wt%. .%, using a radio frequency power supply, the power is 8W, the working air pressure setting value is 0.3Pa, the base plate...
Embodiment 2
[0047] Step 1: Grind the steel substrate with 600#, 1000#, 1500#, 2000# sandpaper in turn to completely cover the previous scratches, and then polish it until it is bright without obvious scratches.
[0048] Step 2: The polished steel substrate was ultrasonically cleaned in acetone and absolute ethanol for 10 min, respectively, and dried with a hair dryer.
[0049] Step 3: Fix the substrate on the substrate, and then automatically accompany it into the vacuum coating chamber, and vacuumize until the vacuum degree of the back is lower than 4.0×10 -4 Pa.
[0050] Step 4: After vacuuming, the power is 200W, the airflow rate is 60sccm, and the etching is performed for 5 minutes.
[0051] Step 5: A TaWMoCrZr refractory high-entropy alloy coating is prepared by co-sputtering by magnetron sputtering.
[0052] Two TaWMoCr alloy targets were sputtered with a DC power supply. The purity of the TaWMoCr alloy target was 99.9wt.%, (Ta:W:Mo:Cr=29:29:23:19at.%), the power was 100W, and the...
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