Amorphous Ga2O3 solar-blind ultraviolet detector based on MgO passivation and preparation method thereof

Abstract

The invention discloses an amorphous Ga2O3 solar-blind ultraviolet detector based on MgO passivation and a preparation method of the amorphous Ga2O3 solar-blind ultraviolet detector, and solves the problems that an existing amorphous Ga2O3 solar-blind ultraviolet detector has many defects, so that the response time of the device is slow, and the device cannot work in a high-temperature environment. The amorphous Ga2O3 solar blind ultraviolet detector is obtained through a substrate preparation process, an ultraviolet lithography technology processing process and an atomic layer deposition equipment processing process. When the atomic layer deposition equipment treatment process is carried out, (cyclopentadienyl) magnesium, TEG and oxygen are respectively adopted as a Mg source, a Ga source and an O source; the preparation method comprises the following steps: firstly, cutting and cleaning a large raw material to obtain a substrate with the size of 1 * 1cm < 2 >; preparing an interdigital electrode pattern on the substrate by adopting a negative photoresist photoetching method, and preparing a gold electrode on the upper surface of the substrate by adopting a double-source electron beam physical vapor deposition method to form a primary product; and finally, depositing an MgO passivation layer thin film and an amorphous Ga2O3 thin film on the upper surfaces of the substrate and the interdigital electrode on the primary product by adopting a plasma enhanced atomic layer deposition method.

Description

technical field [0001] The invention relates to the technical field of ultraviolet detection, in particular, to amorphous Ga based on MgO passivation 2 O 3 Solar blind ultraviolet detector and preparation method thereof. Background technique [0002] Over the past few years, most Ga 2 O 3 DUV solar blind photodetectors are all based on β-Ga 2 O 3 Monoclinic wafers, epitaxially grown on sapphire substrates by molecular beam epitaxy (MBE), chemical vapor deposition (CVD) or pulsed laser deposition (PLD) processes. Solar-blind light detection characteristics mainly depend on β-Ga 2 O 3 The crystalline quality of thin films is affected by the substrate hotspot array matching, growth temperature, deposition rate, and annealing conditions. Reference [1] is {Ramana C, Rubio E, Barraza C, Gallardo A, McPeak S, Kotru S and Grant J 2014 Chemical bonding, optical constants, and electrical resistivity of sputter-deposited gallium oxide thinfilms. J.Appl.Phys.115043508. } based...

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Problems solved by technology

However, the presence of oxygen vacancies also leads to extremely slow reaction times of a few seconds

In addition, β-Ga 2 o 3 The formation of the monoclinic phase requires high processing temperatures (>650°C), leading to a sharp increase in the thermal budget and limiting the choice of substrates

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