Triethylamine gas sensor based on sulfur-rich vacancy ZnIn2S4 nanoflower sensitive material and preparation method of triethylamine gas sensor

A gas sensor and sensitive material technology, applied in the direction of material resistance, air quality improvement, etc., can solve problems such as lattice sulfur vacancy defects, and achieve the effects of good detection performance, suitable for mass production, and simple process

Pending Publication Date: 2022-08-05
JILIN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At the same time, subject to ZnIn 2 S 4 The influence of the formation energy of each de

Method used

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  • Triethylamine gas sensor based on sulfur-rich vacancy ZnIn2S4 nanoflower sensitive material and preparation method of triethylamine gas sensor
  • Triethylamine gas sensor based on sulfur-rich vacancy ZnIn2S4 nanoflower sensitive material and preparation method of triethylamine gas sensor
  • Triethylamine gas sensor based on sulfur-rich vacancy ZnIn2S4 nanoflower sensitive material and preparation method of triethylamine gas sensor

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Example Embodiment

[0029] Example 1:

[0030] 1. Processing of Pd metal interdigital electrodes:

[0031] Wipe Al with Pd metal interdigital electrodes with acetone and ethanol cotton balls respectively 2 O 3 The substrate is clean, and then Al with Pd metal interdigitated electrodes 2 O 3 The substrates were sequentially placed in acetone, ethanol and deionized water, ultrasonically cleaned for 5 minutes, and finally dried at 100 °C;

[0032] The present invention uses screen printing technology on Al 2 O 3 Pd metal interdigital electrodes are prepared on the substrate. The specific method is as follows: Mix the ink [Jiahua JX07500487], Pd powder and diluent in a mass ratio of 1:1:2, stir to prepare a paste; then inject the paste into onto a screen plate with an interdigitated electrode pattern, scrape the paste at an inclination angle of 30° and a pressure of 5 N, in Al 2 O 3 The interdigital electrodes are printed on the substrate and dried, and the preparation of Pd metal interdigita...

Example Embodiment

[0038] Example 2

[0039] The processing procedure of the Pd metal interdigital electrode is the same as that of Example 1.

[0040] At room temperature, a metal precursor with a fixed stoichiometric ratio of 1:2 consisting of 0.29 g of zinc nitrate hexahydrate and 0.44 g of anhydrous indium chloride was dissolved in 60 mL of deionized water. Then 0.45 g of thioacetamide, 0.06 g of citric acid and 0.02 g of polyethylene glycol (PEG, 2000 MW) were added to the solution, and vigorously stirred for 20 min. The above solution was transferred to a reactor and reacted at 160 °C for 12 h; after cooling to room temperature, the resultant was centrifuged with ethanol, and the centrifuged product was dried at 60 °C for 24 hours, thereby obtaining a nanosheet assembled based on {0001} crystal planes. Sulfur-rich vacancy ZnIn 2 S 4 Nanoflower sensitive material, the product mass is 0.41g.

[0041] Sulfur-rich vacancy ZnIn assembled based on {0001} faceted nanosheets 2 S 4 Preparatio...

Example Embodiment

[0042] Example 3

[0043] The preparation process of the Pd metal interdigital electrode is the same as that of Example 1.

[0044] At room temperature, a metal precursor with a fixed stoichiometric ratio of 1:2 consisting of 0.29 g of zinc nitrate hexahydrate and 0.44 g of anhydrous indium chloride was dissolved in 60 mL of deionized water. Then, 0.60 g of thioacetamide, 0.09 g of citric acid and 0.02 g of polyethylene glycol (PEG, 2000 MW) were added to the solution, and vigorously stirred for 20 min. The above solution was transferred to a reactor and reacted at 160 °C for 12 h; after cooling to room temperature, the resultant was centrifuged with ethanol, and the centrifuged product was dried at 60 °C for 24 hours, thereby obtaining a nanosheet assembled based on {0001} crystal planes. Sulfur-rich vacancy ZnIn 2 S 4 Nanoflower sensitive material, the product mass is 0.42g.

[0045] Sulfur-rich vacancy ZnIn assembled based on {0001} faceted nanosheets 2 S 4 Preparatio...

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Abstract

The invention discloses a triethylamine gas sensor based on a sulfur-rich vacancy ZnIn2S4 nanoflower sensitive material assembled by {0001} crystal face nanosheets and a preparation method of the triethylamine gas sensor, and belongs to the technical field of gas sensors. The device is composed of an Al2O3 substrate, a Pd metal interdigital electrode and a sulfur-rich vacancy ZnIn2S4 nano sensitive material layer from bottom to top, wherein the Pd metal interdigital electrode is coated with the sulfur-rich vacancy ZnIn2S4 nano sensitive material layer, and the sulfur-rich vacancy ZnIn2S4 nano sensitive material layer is assembled based on {0001} crystal face nanosheets. The ZnIn2S4 nanoflower sensitive material is synthesized by changing synthesis conditions, ZnIn2S4 nanoflowers grown through S defect engineering control are formed by self-assembly of nanosheets with exposed high-energy {0001} surfaces, and the surfaces of the ZnIn2S4 nanoflowers have a large number of S vacancies capable of serving as sensing reaction active sites, so that the ZnIn2S4 nanoflowers have good detection performance on triethylamine gas. Meanwhile, the process adopted by the invention is simple, and the manufactured device is small in size and suitable for mass production, thereby having important application value.

Description

technical field [0001] The invention belongs to the technical field of gas sensors, in particular to a sulfur-rich vacancy ZnIn assembled based on {0001} crystal plane nanosheets 2 S 4 Triethylamine gas sensor of nano flower sensitive material and preparation method thereof. Background technique [0002] With the rapid development of industry and technology, while material wealth is greatly enriched, production safety and environmental issues have become increasingly prominent. People have more and more opportunities to be exposed to dangerous gases, such as natural gas with methane and carbon monoxide as the main components, organic volatile toxic gases formaldehyde, benzene, xylene released from decoration materials, coal combustion, sulfur dioxide and Nitrogen oxides, etc. Once these flammable, explosive, toxic and harmful gases are produced or leaked, they will threaten people's health and life. Therefore, it is necessary to develop gas sensors with high responsivity...

Claims

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Application Information

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IPC IPC(8): G01N27/12
CPCG01N27/127Y02A50/20
Inventor 阮圣平樊怡灼刘彩霞李昕周敬然马艳
Owner JILIN UNIV
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