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Novel perovskite photoelectric component and preparation method thereof

A technology of photoelectric components and perovskite, which is applied in the field of new perovskite photoelectric components and its preparation, can solve the problems of perovskite being eroded by water and oxygen, the area of ​​photoactive area becomes smaller, and the degradation of perovskite, so as to achieve easy Large-scale production, avoiding water and oxygen erosion, and improving stability

Pending Publication Date: 2022-08-05
HANGZHOU MICROQUANTA SEMICON CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the dispensing method used in this method to coat the isolation layer has many defects in practical applications. For example, the dispensing operation has a long exposure time in the air, and the perovskite is severely eroded by water and oxygen; The spacer is large, which reduces the area of ​​the photoactive area; the high-energy ultraviolet light used in glue curing will cause the degradation of perovskite; after the glue is cured, there will be volume expansion or contraction, which will affect the protection effect on the side of the perovskite

Method used

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  • Novel perovskite photoelectric component and preparation method thereof

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[0050] The present invention also discloses a method for preparing the aforementioned novel perovskite optoelectronic component, comprising the following steps:

[0051] First prepare the upper half device 1 and the lower half device 3 respectively, and then prepare the upper half perovskite layer 21 and the lower half perovskite layer on the upper composite transport layer 13 of the upper half device 1 and the lower composite transport layer 33 of the lower half device 3, respectively The ore layer 22, and finally the upper half device 1 and the lower half device 3, which have been prepared with the upper half perovskite layer 21 and the lower half perovskite layer 22, are stacked face to face with each other, wherein the upper perovskite layer 21 and the lower calcium The titanium ore layer 22 is laminated and fused with each other to form a complete perovskite layer 2, and the upper electron transport layer 16, the upper hole transport layer 17, the upper isolation layer 14 ...

Embodiment 1

[0077] The preparation method of the first novel perovskite optoelectronic component of the present invention comprises the following steps:

[0078] Step 11. The ITO conductive glass substrate was cleaned and treated with ultraviolet ozone for 30 minutes.

[0079] Step 12. Using a mask, alternately deposit electron transport material tin oxide, isolation material aluminum oxide, hole transport material nickel oxide on the ITO surface to obtain the upper electron transport layer 16, the upper isolation layer 14 and the upper hole transport layer 17, wherein , an upper blank section for preparing the upper blocking layer 15 is reserved between the upper electron transport layer 16 and the upper hole transport layer 17 .

[0080] Step 13. Use laser etching to remove the upper conductive electrode 12 of the upper blank section to expose the upper substrate 11 . The etching width is 1 μm to 1 mm. Then, the isolation material polyamide is filled to form the upper isolation layer ...

Embodiment 2

[0086] The preparation method of the second novel perovskite optoelectronic component of the present invention comprises the following steps:

[0087] Step 21. The ITO conductive glass substrate was cleaned and treated with ultraviolet ozone for 30 minutes. Using a mask, the electron transport material titanium dioxide and the hole transport material copper phthalocyanide are alternately deposited on the surface of the ITO to obtain the upper electron transport layer 16 and the upper hole transport layer 17 respectively.

[0088] Step 22. Use the laser etching method to remove the upper conductive electrode 12 at the bottom of the upper blank groove where the upper isolation layer 15 is located, exposing the upper substrate 11 at the bottom, and the etching width is 1 micrometer to 1 mm.

[0089] Step 23. Using the mask, deposit the material polyamide for preparing the upper isolation layer and the upper isolation layer in the reserved upper blank groove respectively to prepar...

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Abstract

The invention relates to a novel perovskite photoelectric component which comprises an upper half device, a perovskite layer and a lower half device, the upper half device comprises an upper substrate, an upper conductive electrode, an upper electron transport layer, an upper hole transport layer, an upper isolation layer and an upper isolation layer, and the lower half device comprises a lower substrate, a lower conductive electrode, a lower electron transport layer, a lower hole transport layer, a lower isolation layer and a lower isolation layer; each upper electron transport layer and each lower hole transport layer are arranged in an up-and-down symmetry mode relative to the perovskite layer, each upper hole transport layer and each lower electron transport layer are arranged in an up-and-down symmetry mode relative to the perovskite layer, and each upper isolation layer and each lower isolation layer are arranged in an up-and-down symmetry mode relative to the perovskite layer. And each upper isolation layer and each lower isolation layer are symmetrically arranged up and down relative to the perovskite layer. The invention also discloses a preparation method of the photoelectric component. The stability of the perovskite photoelectric component is improved, and the perovskite photoelectric component has the characteristics of simple process, easiness in large-area production and the like.

Description

technical field [0001] The invention belongs to the technical field of preparation of perovskite photoelectric components, and particularly relates to a novel perovskite photoelectric component and a preparation method thereof. Background technique [0002] Perovskites are a class of compounds with the structural formula ABX 3 The general term for crystal materials. In the organic halide perovskite structure, A is usually a cation such as methylammonium (MA) and formamidine (FA), B is a metal cation such as lead and tin, and X is an anion such as chlorine, bromine, and iodine. Perovskites have excellent semiconductor properties and have made remarkable progress in the field of photovoltaic devices. [0003] In the process of manufacturing large-area optoelectronic devices in industry, the active material is usually isolated into several individual small parts, and then connected in series, thereby improving the performance of the entire active region. For perovskite mater...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/48
CPCH10K71/50H10K30/152H10K30/151H10K30/15H10K30/10Y02P70/50
Inventor 不公告发明人
Owner HANGZHOU MICROQUANTA SEMICON CO LTD
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