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Method and equipment for radiating ion beam, related method and its equipment

A technology of ion beam and irradiation, applied in the field of irradiating ion beam, to achieve the effect of increasing output, saving labor and reducing size

Inactive Publication Date: 2002-06-12
NISSIN ION EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This is difficult to accomplish with existing techniques as described earlier

Method used

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  • Method and equipment for radiating ion beam, related method and its equipment
  • Method and equipment for radiating ion beam, related method and its equipment
  • Method and equipment for radiating ion beam, related method and its equipment

Examples

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Embodiment Construction

[0042] Description of preferred embodiments

[0043] figure 1 is a side view showing an example of an ion beam irradiating apparatus for carrying out the ion beam irradiating method of the present invention. figure 2 is a schematic diagram showing the figure 1 around the substrate of the device shown. while showing a regular instance of figure 1 with figure 2 with Image 6 In the various drawings of , like reference characters are used to designate like parts. Only differences from the conventional example are explained below.

[0044] First, refer to figure 1 , in the ion beam irradiation device, the ammeter 36 is connected between the plasma generation container 22 of the plasma generation device 20 and the ground through the DC traction power supply 58 . The magnitude and polarity of the traction power supply 58 output voltage can be obtained. Therefore, it is possible to apply a positive or negative pull voltage V on the plasma generating container 22 using t...

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Abstract

When ion beam 14 is irradiated onto a substrate 2 to conduct processing such as ion injection, plasma 30 emitted from a plasma generating device 20 is supplied to a portion close to the substrate 2 to suppress electric charging on a substrate surface caused by ion beam irradiation. A ratio of IE / IB is kept at a value not lower than 1.8, a ratio of II / IE is kept at a value not lower than 0.07 and not higher than 0.7, wherein IB is an electric current of the ion beam 14 irradiated onto the substrate 2, II is an ion current expressing a quantity of ions in the plasma 30 emitted from the plasma generating device 20, and IE is an electron current expressing a quantity of electrons in the plasma 30.

Description

field of invention [0001] The present invention relates to methods and apparatus for irradiating ion beams which are used to irradiate substrates for processing such as ion implantation. The present invention also relates to a method of manufacturing a semiconductor device by irradiating a semiconductor substrate with an ion beam. More specifically, the present invention relates to a device for suppressing charge-up that occurs when ion beam irradiation is performed. Background of the invention [0002] Image 6 is a side view showing an example of conventional ion beam irradiation. Please refer to the relationship between the substrate 2 and the ion beam 14 figure 2 floor plan. [0003] This ion beam irradiating apparatus can perform treatment such as ion implantation, which is specifically described below. A point-shaped ion beam drawn from an ion source (not shown) is irradiated on a substrate 2 (for example, a semiconductor substrate) after mass separation and accel...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/48C23C14/00C23C16/00C30B31/22H01J37/02H01J37/04H01J37/20H01J37/317H01L21/223H01L21/265H01L21/42H01L21/66
CPCH01J2237/004H01J37/026H01J2237/31701H01L21/2236H01L21/265
Inventor 酒井滋树池尻忠司
Owner NISSIN ION EQUIP CO LTD
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