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Method of manufacturing monolithic integration of movable micro physical construction on monocrystalline silicon substrate

A micromechanical structure, monolithic integration technology, applied in microstructure technology, microstructure devices, manufacturing microstructure devices, etc., can solve the problems of increased process difficulty, difficult control, and reduced yield, and achieves easy large-scale integration, The effect of low manufacturing cost and easy operation and manufacturing

Inactive Publication Date: 2003-11-12
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Application Information

AI Technical Summary

Problems solved by technology

In the silicon-based process, the surface processing adopts a multi-layer thin film structure (generally less than 3 μm) and sacrificial layer corrosion technology. The production process is complicated and difficult to control. At present, there are few domestic applications. The bulk silicon process is mainly used, and the bulk silicon process is used most. The most important is the bulk silicon dissolving process, that is, the double-layer structure of silicon-glass bonding. Compared with the surface process, the bulk silicon process has a larger processing space (generally greater than 20 μm), but the bulk silicon dissolving process also has many shortcomings. If the process is complex and requires silicon-glass bonding, it increases the difficulty of the process and leads to a decrease in yield

Method used

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  • Method of manufacturing monolithic integration of movable micro physical construction on monocrystalline silicon substrate
  • Method of manufacturing monolithic integration of movable micro physical construction on monocrystalline silicon substrate

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Embodiment Construction

[0020] (1) Single-sided polishing of N-type monocrystalline silicon wafer 1 on a commercially available general-purpose polishing machine, such as figure 1 -(a).

[0021] (2) At 1175°C, use a solid boron source to diffuse concentrated boron on the double-sided deep junction of N-type single crystal silicon wafer 1 to form a boron-rich diffused P-type layer 2, forming an electrically insulating PN junction, and boron-rich diffused P-type layer 2 The junction depth is greater than 40μm, and the concentration of concentrated boron diffusion is greater than 1×10 19 cm -3 ,Such as figure 1 -(b).

[0022] (3) A layer of positive AZ1450 type photoresist 3 is coated on the concentrated boron diffused P-type layer 2, and the thickness of the coated photoresist 3 is 1 μm, such as figure 1 -(c).

[0023] (4) Photoetching the photoresist 3 on the surface of the polished P-type layer 2 to form a suspended movable microstructure pattern, such as figure 1 -(d).

[0024] (5) Using the ...

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Abstract

The present invention discloses a method for making movable micromechanical structure monolithic integration on the unicrystalline silicon substrate. Said invention adopts the processes of dense boron diffusion, photoetching, deep reaction ion etching and selective wet etching to make the movable floating and fixed microstructure on same single-crystal silicon wafer so as to attain the goal of making movable micromechanical monolithic integration. Said invention can make monolithic integration and large-scale integration, and is suitable for making several movable microstructure devices of optical switch, resonator and G-meter, etc.

Description

technical field [0001] The invention relates to a manufacturing method for monolithic integration of movable micro-mechanical structures on a single-crystal silicon substrate in the technical field of micro-electronic mechanical processing, and is especially suitable for manufacturing various devices with movable micro-electronic mechanical structures. Background technique [0002] Micro-electro-mechanical system, also known as MEMS, refers to a controllable and movable micro-electromechanical device with a size below the millimeter level. The combination of these constitutes a system with specific functions, which has the advantages of light weight, small size, low cost and integration. MEMS technology emerged in the mid-1980s and developed rapidly in the early 1990s. At present, many developed countries in the world have given priority to the development of MEMS technology. The United States lists MEMS technology, aerospace technology and information technology as the th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00
Inventor 徐永青杨拥军李海军
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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