Composite substrate material of conductive spinel structure MgIn2O4/MgO and its prepn

Abstract

The composite substrate material of conductive spinel structure MgIn2O4 / MgO is constituted via setting one layer of covering MgIn2O4 layer onto the monocrystalline MgO. The preparation process of the composite substrate material includes the first RF magnetically controlled sputtering to prepare In2O3 film on monocrystalline MgO substrate, and the subsequent solid reaction between In2O3 and MgO at high temperature to form covering MgIn2O4 layer on the monocrystalline MgO substrate. The composite substrate material of the present invention has simple preparation process, and MgIn2O4 has small lattice mismatching degree to GaN (111) and is transparent conducting oxide material. The composite MgIn2O4 / MgO substrate is suitable for epitaxial growth of high quality GaN.

Description

technical field [0001] The invention relates to a conductive spinel structure MgIn suitable for epitaxial growth of InN-GaN-based blue light semiconductors 2 o 4 / MgO composite substrate material and its preparation method. Background technique [0002] Wide bandgap III-V compound semiconductor materials represented by GaN are receiving more and more attention, and they will be used in blue and green light-emitting diodes (LEDs) and laser diodes (LDs), high-density information reading and writing, underwater It has broad application prospects in communication, deep water exploration, laser printing, biological and medical engineering, as well as ultra-high-speed microelectronic devices and ultra-high-frequency microwave devices. [0003] Due to GaN's high melting point, high hardness, and high saturated vapor pressure, high temperature and high pressure are required to grow large-sized GaN bulk single crystals. The Polish High Pressure Research Center only produced strips ...

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Problems solved by technology

[0009] (2) Since the lattice mismatch between MgO crystal and GaN reaches 13%, and it is not stable enough in MOCVD atmosphere, it is less used;

[0010] (3) The above transparent oxide substrates are not conductive, making the device difficult to manufacture, and also increases the volume of the device, resulting in a lot of waste of raw materials

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