Sealing material for semiconductor device and method for production thereof

Abstract

The present invention provides: a first sealing material for semiconductor device which sealing material is excellent in plasma resistance and inexpensive; and a second sealing material for semiconductor device and a method of manufacturing this sealing material wherein the sealing material has a good surface smoothness and a good dimensional precision. The first sealing material contains a fluororubber as a rubber component wherein the fluororubber inevitably contains a cured product of a fluorine-based elastic copolymer of a specific composition. The second sealing material is obtained by crosslinking, with ionizing radiation, a fluororubber preform containing a fluororubber component (a) (comprising a specific fluorine-based elastic copolymer) and a non-elastic fluororesin component (b) (comprising a vinylidene fluoride (co)polymer) in a specific ratio.

Description

technical field [0001] The present invention relates to a sealing material for a semiconductor device and a method for producing the same. Background technique [0002] In the semiconductor manufacturing process, including the use of various plasma gases (O 2 、CF 4 , O 2 +CF 4 , N 2 , Ar, H 2 、NF 3 、CH 3 F, CH 2 f 2 、CH 2 f 6 , Cl 2 、BCl 3 , TEOS, SF 6 etc.) to perform microfabrication, plasma processing is performed in a sealed processing chamber in a semiconductor device in order to realize a plasma environment suitable for various processing. Elastic materials such as rubber are generally used as sealing materials for the sealing of the processing chamber itself, openings for accessing objects to be processed in the processing chamber, piping systems, and the like. [0003] However, the problem with the sealing material used above is that it is prone to deterioration due to direct or indirect exposure to plasma, resulting in the generation of particles in t...

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Problems solved by technology

[0007] However, recently, in order to solve various problems such as the miniaturization of the design rule of the semiconductor wafer and the improvement of the throughput in the semiconductor manufacturing process, the plasma of the mixed gas of oxygen and fluorocarbon gas has been used more and more. And the plasma environment in the polishing process forms a harsher environment. In reality, the sealing material obtained by the above-mentioned conventional technology cannot exhibit sufficient plasma resistance.

That is, with the above-mentioned technology, there is a problem that when oxygen or fluorocarbon-based gas is used alone as the plasma, the plasma resistance can be exerted, but when a plasma using a mixed gas of oxygen and fluorocarbon-based gas In the case of insufficient plasma resistance

In the cross-linking method of irradiating the above-mentioned fluororubber with ionizing radiation, the fluororubber is preformed with an extruder or a press before crosslinking, and the shapeability of the preform obtained as above is poor, so dimensional stability and surface The smoothness is easily insufficient, and sometimes it is easy to affect the dimensional accuracy and surface smoothness of the sealing material

Moreover, the preform before crosslinking is prone to plastic deformation, and when self-weight or external stress is applied during the period before irradiation with ionizing radiation, the shape of the molding cannot be maintained, and the dimensional accuracy changes. Caution is required, and the workability before ionizing radiation treatment is poor, and the dimensional accuracy of the obtained sealing material tends to deteriorate as a result.