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Method for preparing violet light emitting intensified zinc oxide film

A technology of zinc oxide thin film and purple light, which is applied in the direction of sputtering coating, vacuum evaporation plating, metal material coating process, etc., can solve the problems of deviation from stoichiometric ratio and low emission intensity of purple light, and achieve low cost and abundant sources , cheap effect

Inactive Publication Date: 2006-03-29
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, compared with molecular beam epitaxy, the atomic ratio of zinc and oxygen in zinc oxide films prepared by magnetron sputtering usually deviates from the stoichiometric ratio, which is due to the existence of a large number of defects such as zinc gaps or oxygen vacancies.
This not only leads to low violet emission intensity of ZnO, but also light emission caused by defects in other visible light bands, see figure 1

Method used

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  • Method for preparing violet light emitting intensified zinc oxide film
  • Method for preparing violet light emitting intensified zinc oxide film

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Experimental program
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Effect test

Embodiment 1

[0025] At room temperature, the magnetron reactive sputtering method is adopted, and the preparation equipment is a DMD-450 magnetron sputtering planar fixture coating machine. 99.99% metal zinc is mixed with 5wt% spectrally pure metal cadmium as the cathode sputtering zinc target, and the anode It is connected to the vacuum chamber; the sputtering zinc target is welded to the copper base plate to ensure the water cooling effect and electrical conductivity of the target; the cleaned quartz sheet is installed on the base fixture, and the movable baffle is placed between the base fixture and the target ;Close the air valves and vacuum until the vacuum degree reaches 3×10 -3 Above Pa; put in proper amount of argon and oxygen, the ratio of argon and oxygen is 1:1, control the vacuum degree of 0.1Pa; the power of sputtering power supply is 100W, turn on the DC power supply and pre-sputter for 10 minutes; rotate the substrate fixture, remove the movable The baffle plate is used to d...

Embodiment 2

[0028] At room temperature, the magnetron reactive sputtering method is adopted, and the preparation equipment is a DMD-450 type magnetron sputtering planar fixture coating machine, and 99.99% metal zinc is mixed with 7.5wt% (weight percent) spectrally pure metal cadmium as the cathode target , the anode is connected to the vacuum chamber; the sputtering zinc target is welded to the copper base plate to ensure the water cooling effect and electrical conductivity of the target; the cleaned silicon wafer is installed on the base fixture, and the movable baffle is placed on the base fixture and the target Between; after closing the air valves, vacuum until the vacuum degree reaches 3×10 -3 Above Pa; put in proper amount of argon and oxygen, the ratio of argon and oxygen is 1:5, control the vacuum degree 0.3Pa; the power of sputtering power supply is 250W, turn on the DC power supply and pre-sputter for 7.5 minutes; rotate the substrate fixture, remove the movable The baffle plate...

Embodiment 3

[0031] At room temperature, the magnetron reactive sputtering method is adopted, and the preparation equipment is a DMD-450 magnetron sputtering plane fixture coating machine, and 99.99% metal zinc is mixed with 10wt% spectrally pure metal cadmium as a cathode target, an anode and a vacuum chamber Connected; weld the sputtering zinc target to the copper base plate to ensure the water cooling effect and electrical conductivity of the target; install the cleaned sapphire base on the base fixture, and place the movable baffle between the base fixture and the target; close it Vacuum after each air valve until the vacuum degree reaches 3×10 -3 More than Pa; put in proper amount of argon and oxygen, the ratio of argon and oxygen is 1:10, control the vacuum degree of 0.5Pa; the power of sputtering power supply is 500W, and the DC power supply is turned on for 5 minutes before sputtering; rotate the substrate fixture and remove the activity The baffle plate is used to deposit the thin...

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Abstract

A process for preparing the zinc oxide film with intensified violet light emitting by magnetically controlled sputtering includes such steps as adding high-purity Zn to the optical-purity Cd to obtain Zn target as cathode, connecting anode to vacuum chamber, welding said Zn target to base plate made of red copper, installing the cleaned substrate to fixture, arranging a movable barrier between said fixture and Zn target, vacuumizing, pre-sputtering, removing said movable barrier, and depositing zinc oxide film.

Description

technical field [0001] The invention relates to a zinc oxide film, in particular to a method for preparing a zinc oxide film with enhanced purple light emission. Background technique [0002] Zinc oxide is a self-activated wide-bandgap semiconductor material with a hexagonal structure. The bandgap at room temperature is 3.36 electron volts, especially its exciton binding energy is as high as 60 millielectron volts, which is second to none among the commonly used semiconductor materials. , this feature makes it have the favorable conditions for short-wavelength light emission at room temperature. In addition, zinc oxide has high electrical conductivity, it also has high chemical stability and high temperature resistance like other oxides, and it has abundant sources and low price. These advantages make it an excellent material for preparing optoelectronic devices, which is of great development and application value. [0003] As a wide bandgap semiconductor material, various...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/08C23C14/54C23C14/58
Inventor 方明洪瑞金贺洪波易葵邵建达
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI