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Anisotropic conductive connector and wafer inspection device

An anisotropic and conductive technology, applied in the field of wafer inspection devices, can solve the problem of long distance of signal transmission system, and achieve the effect of maintaining stability, high conductivity and reducing size

Inactive Publication Date: 2006-07-19
JSR CORPORATIOON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0016] In addition, the length of the connecting nail 86 must be large, so the distance of the signal transmission system also becomes long, so it is difficult to correspond to the electrical detection of a high-function integrated circuit that requires high-speed processing.

Method used

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  • Anisotropic conductive connector and wafer inspection device
  • Anisotropic conductive connector and wafer inspection device
  • Anisotropic conductive connector and wafer inspection device

Examples

Experimental program
Comparison scheme
Effect test

manufacture example 1

[0252] Prepare a brass plate with a thickness of 3.0mm, and drill holes in the X-X direction on one side of the non-magnetic material substrate (indicating the same as figure 1 The direction corresponding to the X-X direction shown. The same below) and the Y-Y direction (representing the direction perpendicular to the X-X direction. The same below) form a plurality of circular recesses with a diameter of 0.3mm and a depth of 2.7mm for accommodating magnetic components at a pitch of 0.8mm, and at the same time On the other side of the non-magnetic material substrate in the X-X direction and Y-Y direction, a plurality of recesses for forming protrusions with a diameter of 0.3 mm and a depth of 0.05 mm and a circular cross section are formed at a pitch of 0.8 mm. Substrate of non-magnetic material. In each magnetic member accommodation recess of the non-magnetic material substrate, a spherical magnetic member with a diameter of 0.3 mm made of iron is provided, and a cylindrical...

manufacture example 2

[0255] Prepare an iron plate with a thickness of 6mm, and use dry film photoresist and ferric chloride to perform photolithography on one side of the iron plate, so that the X-X direction on the ferromagnetic material substrate with a thickness of 5.9mm and made of iron Form a plurality of disc-shaped ferromagnetic material layers with a thickness of 0.1 mm and a diameter of 0.25 mm at a pitch of 0.65 mm in the Y-Y direction to form an intermediate body.

[0256] On one side of the intermediate body, on the region other than the ferromagnetic material layer, a non-magnetic material layer with a thickness of 0.15 mm is formed using a photoresist, thereby making an upper mold, and simultaneously making a lower mold in the same way. made Figure 7 Die for the structure shown. This mold is called "die b".

manufacture example 3

[0258] Prepare an iron plate with a thickness of 6mm, and use dry film photoresist and ferric chloride to perform photolithography on one side of the iron plate, so that the X-X direction on the ferromagnetic material substrate with a thickness of 5.9mm and made of iron A plurality of disc-shaped ferromagnetic material layers with a thickness of 0.1 mm and a diameter of 0.40 mm are formed at a pitch of 1.00 mm in the Y-Y direction to form an intermediate body.

[0259] On one side of the intermediate body, on the area other than the ferromagnetic material layer, a non-magnetic material layer with a thickness of 0.2 mm is formed using a photoresist, thereby making an upper mold, and at the same time making a lower mold by the same method, This makes Figure 7 Die for the structure shown. This mold is called "die c".

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Abstract

Disclosed herein are a wafer inspection apparatus, which is small in size, is prevented from shortening the service life of its circuit board for inspection, capable of collectively performing inspection as to a great number of electrodes to be inspected, has good electrical properties and capable of performing electrical inspection of high functional integrated circuits, and an anisotropically conductive connector suitable for use in this wafer inspection apparatus. The anisotropically conductive connector of the invention comprises an elastic anisotropically conductive film composed of a plurality of conductive parts for connection each extending in a thickness-wise direction of the film and arranged in a state separated from each other and an insulating part formed among these conductive parts for connection, and a frame plate for supporting this film. The frame plate is formed of a metallic material having a coefficient of linear thermal expansion of 3 x 10 -6 to 2 x 10 -5 K -1 , the conductive parts for connection are obtained by filling conductive particles having a number average particle diameter of 20 to 80 m and exhibiting magnetism in an elastic polymeric substance at a high density, the conductive particles have, on a surface of which, a coating layer composed of a noble metal and having a thickness of at least 20 nm, each of the conductive parts for connection has a durometer hardness of 10 to 35, and an electric resistance between the conductive parts for connection is at least 10 M CR .

Description

technical field [0001] The present invention relates to a wafer testing device and an anisotropic conductive connector applicable to the wafer testing device, and more specifically, to a wafer for collectively performing a probing test on a part or all of a plurality of integrated circuits formed on a wafer An inspection device, or a wafer inspection device for collectively performing a burn-in test on a part or all of a plurality of integrated circuits formed on a wafer, and an anisotropic conductive connector applicable to the wafer inspection device. Background technique [0002] Generally, in the manufacturing process of a semiconductor integrated circuit device, after forming a plurality of integrated circuits on a wafer, a probing test is performed on each integrated circuit. Next, semiconductor chips are formed by dicing the wafer, and the semiconductor chips are accommodated in a suitable package and sealed, and then a burn-in test is performed on each packaged semic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R1/073H01R11/01H01L21/66H01R4/04
CPCG01R1/0735H01R12/52H01R4/04G01R1/07378H01L22/00G01R1/073H01R11/01
Inventor 五十嵐久夫佐藤克己井上和夫
Owner JSR CORPORATIOON
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