Photomask blank, photomask and fabrication method thereof

A technology for photomasks and light-shielding films, applied in the field of photomasks, can solve problems such as hindering defect inspection, high film reflectivity, and the inability of photomask blank structures to satisfy fine photomask patterns satisfactorily. Increase dry etching rate, ensure etching resistance, and reduce thickness
CN1900819AActive Publication Date: 2007-01-24SHIN ETSU CHEM IND CO LTD +1
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SHIN ETSU CHEM IND CO LTD
Publication Date
2007-01-24

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Abstract

PROBLEM TO BE SOLVED: To provide a halftone type phase shift mask on which a fine photomask pattern is formed with high accuracy, and to provide a mask blank for producing the above mask. ŽSOLUTION: A semitransparent film 15 having a predetermined phase shift and transmittance to exposure light and a light shielding film 12 placed on the semitransparent film 15 are disposed on one principal face of a transparent substrate 11 such as quartz as a photomask substrate. The light shielding film 12 is surely a so-called "light shielding film" but it can also act as an antireflection film. The semitransparent film 15 is a halftone phase shift layer comprising a halftone material containing both of silicon (Si) and molybdenum (Mo) as an absorbent material. In order to use the halftone phase shift mask blank for producing a mask for ArF exposure, the film thickness and composition of the light shielding film 12 are selected to obtain the optical density OD of the film in the range of 1.2 to 2.3 with respect to light at 193 or 248 nm wavelength. Ž
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Description

Technical field

[0001] The present invention relates to photomasks, photomask blanks used as raw materials for photomasks, and methods for making them. Background technique

[0002] In recent years, the increase in the packaging density of large integrated circuits requires the miniaturization of circuit patterns. In order to meet the demand for such miniaturization, advanced semiconductor micromachining technology has become extremely important. For example, the increase in the packaging density of large integrated circuits essentially requires a technique for thinning the wires of wiring patterns in the circuit, or a technique for miniaturizing contact hole patterns used for interweaving wiring units. The trend of miniaturization of the circuit patterns of such large integrated circuits is accelerating because it is the most effective way to increase the operation speed and reduce energy consumption.

[0003] Most of these advanced micromachining technologies are based on photo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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