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P-type solar cell grade polycrystalline silicon preparing process

A technology for preparing solar cells and polysilicon, which is applied in the metallurgical field, can solve the problems of difficulty in removing boron and take time to popularize, and achieves the effects of reducing industrial cost indicators, saving materials, and simplifying process flow.

Inactive Publication Date: 2007-03-28
高文秀
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, p-type silicon materials are used in the international general solar cell production line almost without exception. It is much more difficult to remove phosphorus, and it will take time to promote it

Method used

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  • P-type solar cell grade polycrystalline silicon preparing process
  • P-type solar cell grade polycrystalline silicon preparing process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Embodiment 1. The manufacturing process of solar cell-grade polysilicon includes the following steps in sequence:

[0026](1) Silica selection: Since silicon-based solar cell materials are extremely sensitive to III-V elements, and metal elements are also very harmful to the improvement of solar cell conversion efficiency, so choose a single metal element content of less than 100ppmWt (weight content, lower Same), the total metal content is less than 3000ppmWt, the group III non-metal element content is less than 0.1ppmWt and the group V non-metal element content is less than 100ppmWt silica as raw material. (2) Submerged arc furnace reduction: select petroleum coke as reducing agent with single metal element content less than 100ppmWt, total metal content less than 3000ppmWt, group III nonmetal element content less than 0.1ppmWt and group V nonmetal element content less than 100ppmWt . The ratio of silica to petroleum coke is converted according to its purity and then char...

Embodiment 2

[0027] Embodiment 2. In this embodiment, in step (2), coal accounts for 15% of the weight of the reducing agent, the poplar stick ramming alternate time is 10 minutes, the silicon water discharge time interval is 4 hours, and the cooling water in the ingot casting process The temperature is controlled at 30°C, and the thickness of the silicon ingot is controlled at 30 cm; in step (3), the temperature rise step is 15°C, and the temperature is raised to one step for 1 minute; in step (5), the frequency is controlled at 150 Hz, and the vibration time is 20 minutes. The temperature of the silicon water is kept at 1700℃, and the high temperature is left for 15 minutes after the vibration is completed; in step (7), the silicon water is kept at 1600℃ for 100 minutes, and the power of the lowermost heating element is gradually reduced to zero power in 5 hours. , The entire ingot casting process takes 30 hours. Others are the same as in Example 1.

Embodiment 3

[0028] Example 3. In this example, in step (2), coal accounts for 30% of the weight of the reducing agent, the alternating time of poplar stick stoking is 15 minutes, the time interval of silicon water is 6 hours, and the cooling water in the ingot casting process The temperature is controlled at 60°C, and the thickness of the silicon ingot is controlled at 40 cm; in step (3), the temperature rise step is 20°C, and the temperature is increased to a step for 8 minutes; in step (5), the frequency is controlled at 250 Hz, and the vibration time is 10 minutes. The temperature of the silicon water is kept at 1800℃, and the high temperature is left for 20 minutes after the vibration is completed; in step (7), the silicon water is kept at 1800℃ for 30 minutes, and the power of the lowermost heating element is gradually reduced to zero power in 12 hours. , The entire ingot casting process takes 72 hours. Others are the same as in Example 1.

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Abstract

The invention discloses a p-type solar battery graded polycrystalline silicon preparing method, comprising the steps of: (1) selecting high- grade silica as raw material; (2) using mixture of highly pure petroleum coke and coal as reducer to reduce the silica; (3) refining by medium frequency furnace in temperature subregions; (4) electromagnetically blending at high temperature and centrifugally purifying; (5) vibrating at high temperature and medium-middle frequency to purify; (6) dephosphorizing; and (7) ingoting. And it has simple process, low power consumption, and high yield, and can largely reduce the raw material costs of the current solar batteries.

Description

Technical field [0001] The invention belongs to the technical field of metallurgy and relates to a process for preparing p-type solar cell grade polysilicon. Background technique [0002] The current production of high-purity silicon is mainly chemical and physical purification methods. In the chemical method, the production of ultra-high-purity silicon commonly used silane (SiH 4 ) Method, silane method has lower thermal decomposition temperature and relatively less power consumption, which is worthy of promotion. However, due to the strong explosiveness of silane, the cost of this method is too high to be popularized, and it is only used in a small amount in a very special process. At present, the three giants in the United States, Japan, and Germany mostly use the modified German Siemens process to produce 11N-level polysilicon on a large scale. The advantage of the chemical method is that it can deposit 11N purity U-shaped polycrystalline silicon rods at one time. The disadva...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/02H01L31/04
CPCY02E10/50
Inventor 高文秀
Owner 高文秀
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