Cleaning agent for integrated circuit substrate silicon chip and its cleaning method

An integrated circuit and cleaning agent technology, applied in the field of cleaning agents, can solve problems such as complicated operation, difficult control of the cleaning process, unsatisfactory removal of organic matter, etc., and achieve the effect of reducing surface tension, improving properties, and good cleaning effect

Inactive Publication Date: 2007-04-11
天津晶岭电子材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this method can remove particles and metal ions on the surface of the wafer, it is not ideal for the removal of organic matter, and the operation is more complicated, and the cleaning process is not easy to control

Method used

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  • Cleaning agent for integrated circuit substrate silicon chip and its cleaning method
  • Cleaning agent for integrated circuit substrate silicon chip and its cleaning method
  • Cleaning agent for integrated circuit substrate silicon chip and its cleaning method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Embodiment 1: a kind of cleaning agent that is used for integrated circuit substrate silicon wafer is characterized in that it is made of the effect such as can play pH value modulation agent, complexing agent, corrosion inhibitor, dispersant, oxygen promoter simultaneously The organic base is composed of various surfactants that can reduce the surface tension of the solution, enhance mass transfer, and remove metal ions.

[0040] Said cleaning agent comprises five ingredients:

[0041] Component I: select triethanolamine in the organic base, (HOCH 2 CH 2 ) 3

[0042] Component II: Select the fatty alcohol polyoxyethylene (20) ether (Pingping plus O-20) in the polyoxyethylene ether surfactant, RO (CH 2 CH 2 O) 20 H R = C 12-18 h 25-37 ;

[0043] Component III: Condensate of ethylene oxide and higher fatty alcohol (JFC) in selected polyoxyethylene ether penetrants R-O(C 2 h 4 O) n h

[0044] Ingredient III: Ethylenediaminetetraacetic acid disodium salt (EDTA...

Embodiment 2

[0055] Embodiment 2: a kind of cleaning agent that is used for integrated circuit substrate silicon chip is characterized in that it is made of the effect such as can play pH value modulation agent, complexing agent, corrosion inhibitor, dispersant, oxygen promoter simultaneously The organic base is composed of various surfactants that can reduce the surface tension of the solution, enhance mass transfer, and remove metal ions.

[0056] Said cleaning agent comprises five ingredients:

[0057] Component I: select tetramethylammonium hydroxide in the organic base;

[0058] Component II: select polyoxyethylene sorbitan monooleate (Tween-80);

[0059] Ingredient III: Select Octanol Ethoxylates

[0060] Ingredient III: Tetrahydroxyethylethylenediamine diethylenediaminetetraacetic acid salt

[0061] Component V: H 2 O;

[0062] The ratio of the four components is: component I accounts for 40%, component II accounts for 2%, component III accounts for 8%, and component III accoun...

Embodiment 3

[0071] Embodiment 3: a kind of cleaning agent that is used for integrated circuit substrate silicon chip is characterized in that it is made of the effect such as can play pH value modulation agent, complexing agent, corrosion inhibitor, dispersant, oxygen promoter simultaneously The organic base is composed of various surfactants that can reduce the surface tension of the solution, enhance mass transfer, and remove metal ions.

[0072]Said cleaning agent comprises five ingredients:

[0073] Component I: select hexahydroxyethylenediamine in the organic base;

[0074] Component II: Select nonylphenol polyoxyethylene ether;

[0075] Ingredient III: Sorbitan Oleate

[0076] Ingredient III: Ethylenediaminetetraacetic acid disodium salt (EDTA)

[0077] Component V: H 2 O;

[0078] The ratio of the four components is: component I accounts for 40%, component II accounts for 2%, component III accounts for 8%, and component III accounts for 50%.

[0079] A cleaning method for a c...

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Abstract

The cleaning agent for integrated circuit substrate silicon chip features that it consists of organic base functioning as pH regulator, complexing agent, corrosion inhibitor, dispersant and oxidizing assistant simultaneously in 40-45 %, surfactant functioning to lower surface tension of the solution, enhance mass transfer and eliminate metal ion simultaneously in 7-15 %, and water in 40-53 %. The cleaning method with the cleaning agent includes adding deionized water in 8-15 times, twice ultrasonic cleaning at 50-60deg.c for 5-10 min each, twice ultrasonic rinsing in deionized water at 50-60deg.c for 5-10 min each, sprinkling and stoving. The present invention has the advantages of excellent cleaning effect, simple preparation process, convenient operation and environment friendship.

Description

(1) Technical field: [0001] The invention relates to a cleaning agent, in particular to a cleaning agent for silicon chips of integrated circuit substrates and a cleaning method thereof. (two) background technology: [0002] With the development of microelectronics technology, the integration level of ULSI is rapidly increasing, and the feature size of devices is continuously decreasing, and the requirements for chip surface contamination are more stringent. In the VLSI fabrication process, the surface state and cleanliness of the chip are one of the most important factors affecting the quality and reliability of the device. The effects of pollutants on semiconductor devices are complex and also depend on the nature and quantity of the pollutants themselves. Particle contamination during packaging and masking operations is one of the most common types of contamination. For example, the adsorbate on the surface of the microelectronic device substrate forms a nail model duri...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C11D1/66C11D3/30H01L21/304
Inventor 仲跻和
Owner 天津晶岭电子材料科技有限公司
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