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Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device containing the same

a technology of ultralow dielectric constant material and semiconductor device, which is applied in the direction of semiconductor/solid-state device details, coatings, chemical vapor deposition coatings, etc., can solve the problems of increasing signal delays in ulsi electronic devices, dielectrics are rendered useless during integration, and dielectric materials are not thermally stabl

Inactive Publication Date: 2002-09-26
INTEL CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0013] It is yet another object of the present invention to provide a thermally stable ultralow dielectric constant material that has low internal stresses and a dielectric constant of not higher than about 2.8. More preferably, the dielectric constant for the ultralow-k material is in a range of about 1.5 to about 2.5 and, most preferably, the dielectric constant is in a range of about 2.0 to about 2.25.

Problems solved by technology

This combined effect increases signal delays in ULSI electronic devices.
However, these dielectric materials are not thermally stable when exposed to temperatures above 300.about.350.degree. C.
Consequently, these dielectrics are rendered useless during integration.
Furthermore, the precursor materials are high cost and prohibitive for use in mass production.

Method used

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  • Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device containing the same
  • Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device containing the same
  • Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device containing the same

Examples

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example 1

[0052] In this example, according to FIG. 3, a wafer is first prepared by introducing the wafer into reactor 10 through a slit valve 14 and pre-etching the wafer by argon gas. In this wafer preparation process, the wafer temperature is set at about 1 80.degree. C. and the argon flow rate is set at about 25 sccm, to achieve a pressure of about 100 mTorr. A RF power is then turned on to about 125 W for about 60 seconds. The RF power and the argon gas flow are then turned off.

[0053] The TMCTS precursor is carried into the reactor reactor using He as a carrier gas; He is at a pressure of about 5 psig at the inlet to the TMCTS container. The ultralow-k film according to the present invention can be deposited by first establishing gas flows of TMCTS+He and CPO to desired flow rates and pressure, i.e., at about 20 sccm of TMCTS+He and about 6 sccm of CPO and about 100 mTorr. A RF power is then turned on at about 15 W for a time period of about 50 minutes. The RF power and the gas flow are ...

first embodiment

[0055] Results of the first embodiment are now discussed in reference to FIGS. 4 and 5. FIG. 4 presents a Fourier transform infrared ("FTIR") spectrum of a typical SiCOH film. The spectrum displays a strong Si--O absorption band at about 1000-1100 cm.sup.-1, a Si--CH.sub.3 absorption peak at about 1275 cm.sup.-1, a Si--H absorption band at about 2150-2250 cm.sup.-1 and small C--H absorption peaks at about 2900-3000 cm.sup.-1. The relative intensities of the CH, SiH and SiCH.sub.3 peaks as compared to the SiO peak of the SiCOH film are presented in Table 1 herein below.

[0056] FIG. 5 presents the FTIR spectrum obtained from an ultralow-k film prepared from a mixture of (TMCTS+He)+CPO in accordance with the present invention. The spectrum displays the Si--O, Si--CH.sub.3, and C--H absorption peaks, as in FIG. 4. However, the Si--H peak is missing, the intensity of the C--H absorption band at about 2900-3000 cm.sup.-1 is much stronger for the ultralow-k film than for the SiCOH film show...

example 2

[0057] In this example, a wafer is prepared as described in Example 1, but the wafer temperature is set at about 300.degree. C. The TMCTS precursor is then carried into the reactor using He as a carrier gas; He is at a pressure of about 5 psig at the inlet to the TMCTS container. The ultralow-k film according to the present invention can be deposited by first establishing gas flows of TMCTS+He and CPO to desired flow rates and pressure, i.e., at about 150 sccm of TMCTS+He and about 50 sccm of CPO and about 2000 mTorr. A RF power is then turned on at about 150 W for a time period of about 10 minutes. The RF power and the gas flow are then turned off. The wafer is then removed from the reaction reactor 10 and annealed as described in Example 1.

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Abstract

A method for fabricating a thermally stable ultralow dielectric constant film comprising Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing plasma enhanced chemical vapor deposition ("PECVD") process is disclosed. Electronic devices containing insulating layers of thermally stable ultralow dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, cyclic siloxanes and organic molecules containing ring structures, for instance, tetramethylcycloterasiloxane and cyclopentene oxide.

Description

[0001] The present invention claims benefit of U.S. Provisional Application Serial No. 60 / 243,169 entitled "An Ultralow Dielectric Constant Material as an Intralevel or Interlevel Dielectric in a Semiconductor Device and Device Made" and filed Oct. 25, 2000.[0002] 1. Technical Field of the Invention[0003] The present invention generally relates to a method for fabricating a dielectric material that has an ultralow dielectric constant (or ultralow-k) associated therewith and an electronic device containing such a dielectric material. More particularly, the present invention relates to a method for fabricating a thermally stable ultralow-k film for use as an intralevel or interlevel dielectric in an ultra-large-scale integration ("ULSI") back-end-of-the-line ("BEOL") wiring structure and an electronic structure formed by such method.[0004] 2. Description of the Prior Art[0005] The continuous shrinking in dimensions of electronic devices utilized in ULSI circuits in recent years has re...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): C23C16/40H01L21/312H01L21/316H01L23/532
CPCC23C16/401H01L21/02126H01L21/02203H01L21/02216H01L21/02274H01L21/0228H01L21/02304H01L21/02362H01L21/3122H01L21/31633H01L23/53295H01L2924/0002H01L2924/00
Inventor GRILL, ALFREDMEDEIROS, DAVID R.PATEL, VISHNUBHAI V.
Owner INTEL CORP
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