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Articles formed by chemical vapor deposition and methods for their manufacture

a technology of chemical vapor deposition and chemical vapor, which is applied in the direction of thin material processing, metallic material coating process, coating, etc., can solve the problems of material waste, limited flexibility in the geometry of sheets and pieces to be cut, and axial bows or curves in machined rings, so as to reduce waste during manufacture, increase space utilization, and reduce the unit cost of manufacturing rings

Inactive Publication Date: 2005-06-09
MORGAN ADVANCED CERAMICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0029] Advantages of this invention include increased space utilization, reduced unit cost of manufacturing the rings, reduced waste during manufacture, and the ability to produce rings of varying diameter, cross-sectional width and thickness depending on the height of cutting (i.e., without varying the deposition time).

Problems solved by technology

For example, when a ring is produced from a sheet of deposited material, differences in the material characteristics across the thickness of the deposited sheet may lead to increased tension or stress within the material that can cause a slight axial bow or curve in the machined ring.
Moreover, there is limited flexibility in the geometry of a sheet and the pieces to be cut, so there is material waste due to the layout pattern of the pieces.
There is also surplus material in the piece pattern that is cut or ground from between and within the pieces to make the blanks, such as edges and centers of rings, which results in a large quantity of scrap material.
For example, the material that is cut out around each ring and between each ring (to form an inner diameter of the ring) is typically wasted, much like the unused cookie dough remaining after cookies are stamped out from a roll of cookie dough.
There are also occasional problems with cracking of a large, CVD-produced plates or sheets of ceramic material during the CVD process, which can reduce the yield significantly.
The combination of cracks and the scrap material from the sheet and the material that is ground from the blanks lowers the average raw material-to-product conversion ratio significantly.
One problem related to forming silicon carbide rings from these alternative processes is that the mandrels need to be rotated throughout the formation process to prevent build-up in undesired areas.
In many instances, the gases are injected into the reaction chamber such that the gases are not focused on any particular mandrel or surface of interest, but instead are allowed to deposit non-uniformly on all surfaces of the reactor.
The specifically-shaped mandrels are also complicated to manufacture.
This evolution of grain structure typically produces a gradient in microstructure across the thickness of the material, which in turn causes a gradient in internal stress of the deposited material, resulting in bending or “bow” of the deposited material when it is released from the substrate.
This gradient in material microstructure and stress complicates the machining process, and remains in the material even after machining is completed, often resulting in some bow or waviness in the finished part.
This bow or waviness is undesirable, especially in parts that require precise tolerances and extremely consistent flatness, such as rings for use in contact with semiconductor wafers.
The larger the part, the more significant the problem can become.

Method used

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  • Articles formed by chemical vapor deposition and methods for their manufacture
  • Articles formed by chemical vapor deposition and methods for their manufacture
  • Articles formed by chemical vapor deposition and methods for their manufacture

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0078] SiC edge rings for handling 300 mm Si wafers for semiconductor processing were fabricated as follows. A graphite tube with nominal inner diameter of 340 mm was manufactured from an isostatically pressed, fine grained grade of graphite with a thermal expansion similar to that of dense CVD SiC. Four tubular sections, each with a length of approximately 13 inches were assembled in a CVD reactor. Optional deposition-prohibiting spacer devices were positioned in between each section to facilitate removal of each tubular section after deposition.

[0079] The precursor gas MTS was introduced through a single injector positioned symmetrically at the top of the tubular mandrel assembly at a flow rate of 9.1 liters per minute. Hydrogen was delivered through the same injector at a flow rate of 76 liters per minute. The ratio of hydrogen-to-MTS was 8.4. The CVD reactor pressure was 200 torr and deposition temperature was 1350° C. The total deposition time was 174 hours, and the average de...

example 2

[0084] SiC edge rings for handling 200 mm Si wafers for semiconductor processing were fabricated according to the process of Example 1, with the following exceptions: the graphite tube had a nominal inner diameter of 240 mm, each tubular graphite section had a length of approximately 9 inches, and the hydrogen-to-MTS flow ratio was 7.4. The average deposition rate was 0.051 inch per hour. The flexural strength of rings obtained varied between 57 and 68 ksi (390 to 465 MPa), again indicating outstanding material strength.

example 3

[0085] SiC edge rings for handling 200 mm Si wafers for semiconductor processing were fabricated according to the process of Example 2, with the following exceptions: each tubular graphite section had a length of approximately 8.5 inches, and the hydrogen-to-MTS flow ratio was 8.4 and a doping gas was added to produce an electrically conducting SiC deposit. The average deposition rate was 0.065 inch per hour. Rings obtained varied in electrical resistivity from 0.004 ohm-cm to 0.007 ohm-cm.

[0086] For comparison, SiC material deposited in plate form that has been deposited under similar conditions onto flat graphite sheet typically exhibits a resistivity between 0.002 ohm-cm and 0.008 ohm-cm. Therefore, the electrical resistivity measurements obtained from the deposit in Example 3 are similar to measurements obtained from plate-form SiC material deposited under similar conditions.

[0087] Representative rings from the prior examples have been coated with CVD silicon coatings to reduc...

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Abstract

Improved methods for manufacturing rings using chemical vapor deposition. Cylindrical tubes are used as deposition substrates and the resulting material deposited on the inside surface of the cylindrical tubes is sliced or cut into the desired ring size and shape. The resulting rings have a crystal growth that is oriented substantially planar to the finished article.

Description

BACKGROUND [0001] 1. Field of the Invention [0002] The invention relates to articles formed by chemical vapor deposition and methods of forming such articles. [0003] 2. Description of Related Art [0004] Chemical vapor deposition (CVD) techniques have been widely used to provide thin films and coatings of a variety of materials on various products. Typically, the process involves reacting vaporized or gaseous chemical precursors in the vicinity of a substrate to result in a material such as silicon carbide (SiC) depositing on the substrate. The deposition reaction is continued until the deposit reaches the desired thickness. [0005] CVD techniques can be used to form relatively thin coatings on the surfaces of pre-existing articles; in this situation, the surface of the article forms the substrate. However, CVD techniques can also be adapted to produce articles that are formed from the deposited material. In this situation, the substrate upon which deposition occurs is a form or mandr...

Claims

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Application Information

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IPC IPC(8): C23C16/01C23C16/32
CPCC23C16/01C23C16/325Y10T428/218Y10T428/21Y10T428/24942Y10T428/31616Y10T428/3163Y10T428/31645Y10T428/31786Y10T428/31797C23C16/32
Inventor FORREST, DAVID THOMASSCHAUER, MARK WALLACE
Owner MORGAN ADVANCED CERAMICS
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