Articles formed by chemical vapor deposition and methods for their manufacture
a technology of chemical vapor deposition and chemical vapor, which is applied in the direction of thin material processing, metallic material coating process, coating, etc., can solve the problems of material waste, limited flexibility in the geometry of sheets and pieces to be cut, and axial bows or curves in machined rings, so as to reduce waste during manufacture, increase space utilization, and reduce the unit cost of manufacturing rings
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example 1
[0078] SiC edge rings for handling 300 mm Si wafers for semiconductor processing were fabricated as follows. A graphite tube with nominal inner diameter of 340 mm was manufactured from an isostatically pressed, fine grained grade of graphite with a thermal expansion similar to that of dense CVD SiC. Four tubular sections, each with a length of approximately 13 inches were assembled in a CVD reactor. Optional deposition-prohibiting spacer devices were positioned in between each section to facilitate removal of each tubular section after deposition.
[0079] The precursor gas MTS was introduced through a single injector positioned symmetrically at the top of the tubular mandrel assembly at a flow rate of 9.1 liters per minute. Hydrogen was delivered through the same injector at a flow rate of 76 liters per minute. The ratio of hydrogen-to-MTS was 8.4. The CVD reactor pressure was 200 torr and deposition temperature was 1350° C. The total deposition time was 174 hours, and the average de...
example 2
[0084] SiC edge rings for handling 200 mm Si wafers for semiconductor processing were fabricated according to the process of Example 1, with the following exceptions: the graphite tube had a nominal inner diameter of 240 mm, each tubular graphite section had a length of approximately 9 inches, and the hydrogen-to-MTS flow ratio was 7.4. The average deposition rate was 0.051 inch per hour. The flexural strength of rings obtained varied between 57 and 68 ksi (390 to 465 MPa), again indicating outstanding material strength.
example 3
[0085] SiC edge rings for handling 200 mm Si wafers for semiconductor processing were fabricated according to the process of Example 2, with the following exceptions: each tubular graphite section had a length of approximately 8.5 inches, and the hydrogen-to-MTS flow ratio was 8.4 and a doping gas was added to produce an electrically conducting SiC deposit. The average deposition rate was 0.065 inch per hour. Rings obtained varied in electrical resistivity from 0.004 ohm-cm to 0.007 ohm-cm.
[0086] For comparison, SiC material deposited in plate form that has been deposited under similar conditions onto flat graphite sheet typically exhibits a resistivity between 0.002 ohm-cm and 0.008 ohm-cm. Therefore, the electrical resistivity measurements obtained from the deposit in Example 3 are similar to measurements obtained from plate-form SiC material deposited under similar conditions.
[0087] Representative rings from the prior examples have been coated with CVD silicon coatings to reduc...
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