Lithographic method for molding a pattern
a lithographic method and pattern technology, applied in the field of release surfaces, can solve the problems of not being able to mass produce sub-50 nm lithography at a low cost, not being able to use these technologies for mass production of sub-50 nm structures, and being economically impractical, etc., to achieve the effect of improving the efficiency of molding or microreplication processes, low chemical reactivity, and improving resolution
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[0062] An example of a lithographic process according to the present invention forming a pattern in a film carried on a substrate would be practiced by the steps of depositing a film on a substrate to provide a mold having a protruding feature and a recess formed thereby, the feature and the recess having a shape forming a mold pattern. At least a portion of the surface, (in this case a surface of silica or silicon-nitride is preferred) such as the protruding feature(s), if not the entire surface (the protrusions and valleys between the protrusions) onto which the film is deposited, is coated with the release material comprises a material having the formula:
RELEASE-M(X)n-1—, Formula I
RELEASE-M(X)n-m-1Qm Formula II [0063] or
RELEASE-M(OR)n-1—, Formula III
wherein [0064] RELEASE is a molecular chain of from 4 to 20 atoms in length, preferably from 6 to 16 atoms in length, which molecule has either polar or non-polar properties; [0065] M is a metal or semimetal atom; [0066] X is ...
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