Micro-structure formed of thin films
a thin film, micro-structure technology, applied in the direction of mechanical vibration separation, energy-based chemical/physical/physicochemical processes, printing, etc., can solve the problems of micro-optical parts, inability to achieve micro-optical parts, and difficulty in obtaining high resolution
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embodiment 1
[0154] Because, by using fluoro polymer (CYTOP, product of Asahi Glass Company) as the releasing layer, a thin layer can be formed on a substrate by spin-coat method, and surface energy is very small (generally very water repellent), the adhesion of the film formed on the surface is very low (about 1 MPa), and the film is suitable as the releasing layer. After spin-coating of a coupling agent (to improve the adhesion on a substrate) on an Si wafer or glass substrate, a film with thickness of about 2 μm of fluoro polymer (CYTOP) is spin-coated and baked at the maximum temperature of 300° C. to form a releasing layer.
embodiment 2
[0155] By using fluorinated polyimide (OPI-N1005, product of Hitachi Chemical Co., Ltd.) as the releasing layer a releasing layer can be formed by spin-coat method, and polyimide has a glass transition temperature higher than fluoro polymer (CYTOP), and the maximum temperature of film deposition and patterning process is higher. After coating of a coupling agent, a film with a thickness of about 5 μm of fluorinated polyimide (OPI-N1005) is spin-coated on a substrate, and baked at the maximum temperature of 350° C. to form a releasing layer.
embodiment 3
[0156] It is confirmed that a fluorinated surface layer obtained by exposing the substrate surface to a gas containing fluorine atom exhibits the same effect. Specifically, an Si wafer, an Si wafer on which oxide film is formed, or a glass substrate or these substrates coated with non-fluorinated polyimide introduced into a vacuum equipment (dry etching machine), and plasma treatment is applied using CF4 gas (gas flow rate of 100 sccm, discharging power of 500 W, pressure of 10 Pa, and time of 10 minutes), this process results in reduced adhesion strength with the thin film. The same process is also effective using SF6 gas.
[0157] As described hereinabove, according to the present invention, because thin films are used as starting material, and a plurality of thin films are laminated by bonding, thus the dimensional precision is high and high resolution in the lamination direction is realized.
[0158] Because a micro-structure composed of thin films consisting of a metal or an insula...
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