Release film for semiconductor resin molds

Inactive Publication Date: 2009-02-26
ASAHI GLASS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0028]According to the present invention, a release film can be provided which has extremely low gas permeability as compared with conventional ones and can substantially prevent mold contamination by a mold resin. Further, a gas permeability required for the release film to effectively suppress the mold contamination, is defined by a gas permeability rate corresponding more realistically to a low viscosity material from a resin as a mold contaminant. Further, according to the present invention, a rel

Problems solved by technology

On the other hand, along with a strong demand for improvement of productivity of a semiconductor package, there is a problem such that since the resin adheres to the mold, the contaminated mold needs to be often cleaned, or when a sealing resin having a low shrinkage corresponding to a large package is used, sufficient releasability cannot be obtained even if a releasing agent is added.
As a result, in the step of molding a resin for the semiconductor element, the amount of gas and low viscosity material formed from the molten mold resin under a high temperature environment increases, and the gas and low viscosity material permeating through the above release film for molds contact the mold having a high temperature, whereby the mold contamination becomes intense.
Further, covering the mold surface with the release film is carried out by sucking and supporting the film thereon under vacuum, but a volatile component such as an oligomer in the film transfers to the covered side of the mold, whereby the mold contamination may sometimes be caused.
T

Method used

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  • Release film for semiconductor resin molds
  • Release film for semiconductor resin molds
  • Release film for semiconductor resin molds

Examples

Experimental program
Comparison scheme
Effect test

Example

Example 1

[0075](1) As the release layer (I), an ETFE film (manufactured by Asahi Glass Company, Limited, tradename: FLUON ETFE) having a thickness of 12 μm was used. One side (surface (surface to be bonded) facing a support layer) of the ETFE film was treated by corona discharge-treatment with a discharge amount of 40 W·min / m2 to improve the adhesion.

[0076]Further, a 12 μm polyethylene terephthalate film was used as the plastic support layer (II), and on one side of it, alumina was vapor-deposited as a metal oxide to form a gas restraint layer (III). Further, on it, a resin protection layer (III′) was coated to form a film (manufactured by Toppan Printing Co., Ltd., tradename, GX Film).

[0077](2) On the surface of the resin protection layer (III′) of the above film (GX Film), a polyester adhesive was applied to have a film thickness of 0.4 μm as dried, followed by drying, and as shown in FIG. 3, dry-laminating with a release layer (I) was carried out to obtain a release film (hereina...

Example

Comparative Example 1

[0081](1) A simple ETFE film (manufactured by (manufactured by Asahi Glass Company, Limited, tradename: FLUON ETFE) having a thickness of 50 μm was used as it is as a release film sample (hereinafter referred to as “release film 2”) for a test.

[0082](2) The xylene gas permeability coefficient under an environment at 170° C. was calculated in the same manner as in Examples except for using the release film 2 instead of using the above release film 1. Further, the 180° peel test was carried out in the same manner as in Example 1. The result is shown in Table 1.

[0083](3) Further, in the same manner in Example 1, when a mold shot was repeatedly carried out by using the release film 2, a mold contamination became apparent less than 2,000 times of mold shots.

Example

Example 2

[0084](1) A release film (hereinafter referred to as “release film 3”) was obtained in the same manner as in Example 1 except that a 12 μmethylene / vinyl alcohol copolymer (manufactured by Kuraray Co., Ltd., tradename: EVAL EF-F) was used as the plastic support layer (II), and on its one side, aluminum was sputtered in a thickness of 10 nm to form a gas restraint layer (III), and no resin protection layer (III′) was formed.

[0085](2) With respect to the release film 3, the xylene gas permeability coefficient in an environment at 170° C. was calculated in the same manner as in Examples. Further, the peel strength was measured by a 180° C. peel test in the same manner as in Example 1.

[0086]The xylene gas permeability coefficient of the release film 3 was 1×10−16 (kmol·m / (s·m2·kPa)), the peel strength by a 180° peel test was 0 (N / m). The result is shown in Table 1.

[0087](3) Further, in the same manner as in Example 1, a mold shot was repeatedly carried out by using the release f...

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Abstract

To provide a release film which has an extremely low gas permeability, an enormously small mold contamination by a mold resin and a high releasability.
A gas barrier release film for semiconductor resin molds, comprising a release layer (I) having excellent releasability, a plastic support layer (II) supporting the release layer, and a gas restraint layer (III) made of a metal or a metal oxide, formed between the release layer and the support layer, and having a xylene gas permeability of at most 10−15 (kmol m/(s·m2·kPa)) at 170° C. The release layer (I) is preferably formed from a fluororesin such as an ethylene/tetrafluoroethylene copolymer, and a metal oxide layer is preferably a layer of an oxide such as an aluminum oxide, a silicon oxide or a magnesium oxide.

Description

TECHNICAL FIELD[0001]The present invention relates to a release film for semiconductor resin molds, particularly a release film for semiconductor resin molds which can reduce mold contamination.BACKGROUND ART[0002]A semiconductor element (chip) is usually, for protection and blocking from an external environment (such as external air, contaminant, light, magnetism, high frequency wave or impulse), sealed with a resin (mold resin) and is mounted, on a substrate, in the form of a semiconductor package having the chip accommodated therein. Typically, the package is one formed by a transfer molding wherein a thermosetting resin (mold resin) such as an epoxy resin is melted by heating, and then, it is transferred in a mold where the semiconductor chip is set, followed by filling and curing. To the mold resin, a releasing agent is added in addition to a curing agent, a curing accelerator and a filler, to secure smooth releasability of the formed package from the mold.[0003]On the other ha...

Claims

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Application Information

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IPC IPC(8): B32B15/04B32B27/00
CPCB29C33/68H01L21/566H01L2924/0002H01L2924/00Y10T428/3154Y10T428/31678Y10T428/31692H01L21/56
Inventor OKUYA, TAMAOARUGA, HIROSHIHIGUCHI, YOSHIAKI
Owner ASAHI GLASS CO LTD
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