Method of manufacturing microneedle
a manufacturing method and technology of microneedles, applied in the direction of microstructural devices, intravenous devices, needles infusion, etc., can solve the problems of difficult percutaneous absorption of such drugs, affecting the safety of patients, and affecting the absorption of drugs. , to achieve the effect of easy control of the point angle and heigh
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example 1
[0204]First, a silicon wafer was prepared as a substrate. The silicon wafer had crystal orientation of (100) and a thickness of 525 mm. A chromium film with a thickness of 100 nm was formed on the silicon wafer by DC magnetron sputtering. The sputtering pressure was 0.25 Pa and the input power was 1000 W.
[0205]A positive resist (trade name: OFPR-50 cp, manufactured by Tokyo Ohka Kogyo Co., Ltd.) was applied to the chromium film as an etching mask in a thickness of 1 mm. A resist pattern with an opening of 50 mm square was formed by photolithography. The chromium film was etched with a mixed solution of perchloric acid and cerium (IV) ammonium sulfate using the resist pattern as an etching mask to form a chromium pattern having an opening of 50 mm square. After formation of the chromium pattern, the resist pattern was removed with an organic solvent. The size of the opening of the chromium pattern was measured to be 51 mm square (FIG. 4A).
[0206]The silicon wafer was subjected to anis...
example 2
[0211]An example of manufacturing a microneedle using an etching mask having a circular dot pattern will be described.
[0212]First, a silicon wafer (thickness: 525 mm) was prepared as a substrate. A thick photoresist for general purpose (trade name: AZ PLP, manufactured by Clariant Co.) was applied to the silicon wafer as an etching mask in a thickness of 13 mm by spray coating. Etching masks having a circular dot pattern with a diameter of 100 mm was formed by photolithography.
[0213]Then, the etching masks were reflowed by heating the silicon wafer at 150° C. for 30 minutes in a clean oven. The resist pattern after reflow had a cross-sectional shape of a hemisphere and a thickness at the central portion of 20 mm.
[0214]Subsequently, the entire surface of the silicon wafer was etched by ICP (inductively coupled plasma) etching using a fluorine-base gas until the resist pattern was completely removed. As a result of measurement of the etching rates of the resist and silicon substrate, ...
example 3
[0216]A microneedle was manufactured as in Example 2. It should be noted that a pyramidal etching mask having a cross-shaped bottom part as shown in FIGS. 2A and 2B was used. The shape of the bottom of the etching mask was a cross formed by allowing two lines with a width of 40 mm and a length of 150 mm to intersect at right angles. The thickness of the etching mask was 18 mm at maximum.
[0217]The silicon wafer subjected to etching was observed with a scanning electron microscope as in Example 2. A pyramidal needle having a cross-shaped bottom part formed by allowing two lines with a width of 40 mm and a length of 150 mm to intersect at right angles and a height of about 200 mm was provided.
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