Copolymer for semiconductor lithography and producing method thereof, and composition

a semiconductor lithography and copolymer technology, applied in the direction of photomechanical equipment, instruments, nuclear engineering, etc., can solve the problems of unfavorable low molecular weight impurities, inability to neglect, and variation in nature, and achieve the effect of dense and fine integrated circuits

Inactive Publication Date: 2010-12-23
MARUZEN PETROCHEMICAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0017]According to the invention, with a copolymer in which a composition of a hydroxyl group-containing repeating unit of a low molecular weight region, which largely affects particularly on a pattern shape, is controlled, a fine pattern excellent in the rectangularity can be formed and thereby a dense and fine integrated circuit can be formed.

Problems solved by technology

Such a problem is becoming incapable of neglecting as a pattern becomes finer.
However, in all of the above-described technologies, the relationship between a composition control in a low molecular weight region and the lithography characteristics is not disclosed.
The low molecular weight impurities are unfavorable because, in the semiconductor lithography process, the impurities volatilize to stick to an optical system of an exposure device, generate a defect in a pattern or cause a variation in the nature of the copolymer during storage.
However, in all of the technologies, the poor solvent that is brought into contact with the copolymer is, in each of reprecipitation and / or washing step, only a polar solvent having a hydroxyl group or only a nonpolar solvent that does not have a hydroxyl group.
Accordingly, there are problems in that, when a polar solvent having a hydroxyl group is used to refine, a composition of a hydroxyl group-containing repeating unit in the low molecular weight region of the polymer is lowered, and when a nonpolar solvent is used to refine, a composition of a hydroxyl group-containing repeating unit in the low molecular weight region of the polymer is raised.
Accordingly, a problem relating to a shape of a lithography pattern such as mentioned above is not yet overcome.

Method used

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  • Copolymer for semiconductor lithography and producing method thereof, and composition

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0063]In a monomer solution preparation tank maintained in a nitrogen atmosphere, 158 kg of a p-ethylphenol solution containing 24% of p-hydroxystyrene (hereinafter referred to as “PHS”), 23% of methanol and 10% of water, 19.0 kg of tert-butyl acrylate and 1.5 kg of AIBN were charged and dissolved, thereby a monomer solution was prepared. To a polymerization tank, 35 kg of the monomer solution was transferred, followed by heating to 80° C. under stirring, further followed by feeding a remaining monomer solution into the polymerization tank kept at 80° C. over 2 hrs to polymerize. After the completion of the feeding, the monomer solution was aged for 2 hrs with a polymerization temperature kept at 80° C., followed by cooled to room temperature. The obtained polymerization solution was dropped in 620 kg of toluene to precipitate a polymer, followed by removing a supernatant solution. In the next place, the polymer was dissolved with 36 kg of methanol, followed by reprecipitating in 62...

example 2

[0064]Except that, in place of 19.0 kg of tert-butyl acrylate and 1.5 kg of AIBN in example 1, 20.5 kg of 1-ethyl-1-cyclopentyl acrylate and 2.2 kg of AIBN were used, similarly to example 1, a copolymer was obtained, and an average composition, Mw and Mw / Mn of a copolymer and a copolymer composition in a low molecular weight region corresponding to 5% of a copolymer peak were analyzed and a resist pattern was evaluated. Results are shown in Table 1.

example 3

[0065]In a raw material preparation tank maintained in a nitrogen atmosphere, 63.0 kg of methyl ethyl ketone (hereinafter, referred to as “MEK”), 15.6 kg of 5-methacryloyloxy-2,6-norbornane carbolactone (hereinafter, referred to as “NLM”), 17.8 kg of 2-methyl-2-adamantyl methacrylate (hereinafter, referred to as “MAM”) and 8.1 kg of 3-hydroxy-1-adamantyl methacrylate (hereinafter, referred to as “HAM”) were charged and stirred to dissolve at a temperature in the range of 20 to 25° C., thereby a monomer solution was prepared. Furthermore, in a separate tank kept in a nitrogen atmosphere, 10.0 kg of MEK and 1.0 kg of dimethyl-2,2′-azobisisobutyrate were charged, followed by stirring at a temperature in the range of 10 to 20° C. to dissolve, and thereby an initiator solution was prepared. In a polymerization tank kept in a nitrogen atmosphere, after 24.0 kg of MEK was charged and heated to 80° C. under stirring, the initiator solution kept at room temperature (ca 20° C.) and the monome...

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Abstract

In order to improve a resist pattern shape in a semiconductor lithography process, which is a factor largely affecting on a processing precision, an integration degree and yield, a copolymer for semiconductor lithography where a composition of a hydroxyl group-containing repeating unit in a low molecular weight region is controlled, and a method of producing the same are provided.According to the invention, in a copolymer for semiconductor lithography, which is obtained by copolymerizing a monomer having a hydroxyl group and a monomer having no hydroxyl group, when a copolymer of which composition of a hydroxyl group-containing repeating unit is controlled is used, the object can be achieved.

Description

TECHNICAL FIELD[0001]The present invention relates to a copolymer suitable for forming a coating film, such as a resist film used in a semiconductor lithography process, an anti-reflective film or the underlayer film of a multi-layered resist, to a method for the production thereof, and to a composition containing said copolymer for a semiconductor lithography.BACKGROUND ART[0002]In a lithography process employed for producing a semiconductor, formation of a finer pattern is increasingly required so as to match with an elevated degree of integration. For formation of a finer pattern, it is essential that the length of the light wave beaming from an exposure light source be made as shorter as possible. At present, a lithography using a krypton fluoride (KrF) excimer laser (wavelength: 248 nm) is becoming mainstream, and a lithography using an argon fluoride (ArF) excimer laser (wavelength: 193 nm), which enables a line width of 100 nm or less, is expected to come into practical use. ...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): C08F24/00C08F12/24C08F8/00C08F212/04C08F220/26G03F7/004G03F7/039G03F7/11
CPCG03F7/0046Y10S430/111Y10S430/106G03F7/0392C08F216/02C08F216/10G03F7/039G03F7/11
Inventor YAMAGISHI, TAKANORIOKADA, TAKAYOSHIYAMAGUCHI, SATOSHIMIKI, KIYOMI
Owner MARUZEN PETROCHEMICAL CO LTD
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