Method for producing hexagonal boron nitride film using borazine oligomer as a precursor

a technology of boron nitride and borazine oligomer, which is applied in the direction of plasma technique, metal/metal-oxide/metal-hydroxide catalyst, etc., can solve the problems of different number of layers, limited size and thickness control of hexagonal boron nitride exfoliated by chemical exfoliation, etc., and achieves low cost and simple process

Active Publication Date: 2015-03-26
KOREA INST OF SCI & TECH
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  • Abstract
  • Description
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  • Application Information

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Benefits of technology

[0029]According to the present disclosure, a borazine oligomer ((B3N3H4)x) that is obtained by thermal oligomerization of borazine and is controllable in its viscosity is dissolved in a currently used solvent so that it may be used as a precursor. In this manner, the problems, such as control of a gaseous precursor and vapor pressure control, occurring in the CVD(Chemical vapor deposition) method according to the related art are solved, and a high-quality hexagonal boron nitride film is obtained through a simple process at low cost. In addition, the borazine oligomer may be coated onto a metal catalyst substrate or a metal catalyst may be depo

Problems solved by technology

Thus, the mechanical method is problematic in that it is limited in size of the exfoliated hexagonal boron nitride and in productivity.
The hexagonal boron nitride exfoliated by the chemical exfoliation has problems of its limited size and thickness contr

Method used

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  • Method for producing hexagonal boron nitride film using borazine oligomer as a precursor
  • Method for producing hexagonal boron nitride film using borazine oligomer as a precursor
  • Method for producing hexagonal boron nitride film using borazine oligomer as a precursor

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example 1

[0103]A solubilized borazine oligomer (boron nitride precursor solution) is used to prepare a hexagonal boron nitride film. For this, a borazine oligomer ((B3H3H4)x) is prepared through the thermal oligomerization of borazine.

[0104]Next, the borazine oligomer is mixed with chlorobenzene to obtain a boron nitride precursor solution optimized for coating.

[0105]As a metal catalyst substrate, nickel foil is provided. The nickel foil is treated by electrochemical polishing under the condition of 2 volt for 20 minutes. Then, metal surface treatment is carried out through a 5-minute cleaning process including introduction into acetone and ethanol, followed by sonication.

[0106]The solubilized borazine oligomer is coated onto the metal catalyst substrate through spin-coating under the condition of 9000 rpm. Then, baking is carried out at 150° C. for 20 minutes.

[0107]Then, the borazine oligomer coated on the metal catalyst substrate is subjected to heat treatment by increasing the temperature...

example 2

[0108]A solubilized borazine oligomer (boron nitride precursor solution) is used to prepare a hexagonal boron nitride film. For this, a borazine oligomer ((B3H3H4)x) is prepared through the thermal oligomerization of borazine.

[0109]Next, the borazine oligomer is mixed with chlorobenzene to obtain a boron nitride precursor solution optimized for coating.

[0110]The solubilized borazine oligomer is coated onto a silicon substrate through spin-coating under the condition of 9000 rpm. Then, baking is carried out at 150° C. for 20 minutes.

[0111]Then, a nickel metal catalyst is deposited on the borazine oligomer coated on the silicon substrate trough electron beam evaporation.

[0112]Then, the borazine oligomer coated on the metal catalyst substrate is subjected to heat treatment by increasing the temperature to 1000° C. and carrying out heat treatment under argon (Ar) atmosphere at a pressure of 600 mtorr for 1 hour, followed by cooling for 2 hours.

[0113]Example 1 and Example 2 are illustrat...

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Abstract

Provided is a method for producing a high-quality boron nitride film grown by using a borazine oligomer as a precursor through a metal catalyst effect. The method solves the problems, such as control of a gaseous precursor and vapor pressure control, occurring in CVD(Chemical vapor deposition) according to the related art, and a high-quality hexagonal boron nitride film is obtained through a simple process at low cost. In addition, the hexagonal boron nitride film may be coated onto various structures and materials. Further, selective coating is allowed so as to carry out coating in a predetermined area and scale-up is also allowed. Therefore, the method may be useful for coating applications of composite materials and various materials.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application claims priority to Korean Patent Application No. 10-2013-0113046, filed on Sep. 24, 2013, and all the benefits accruing therefrom under 35 U.S.C. §119, the contents of which in its entirety are herein incorporated by reference.BACKGROUND[0002]1. Field[0003]The present disclosure relates to a method for producing a hexagonal boron nitride film by using a borazine oligomer as a precursor and a boron nitride film obtained thereby.[0004]2. Description of the Related Art[0005]Boron nitride (also referred to as BN hereinafter) is a material having a boron atom (atomic number 5) and a nitrogen atom (atomic number 7) bound to each other at a stoichiometric ratio of 1:1. Between the boron atom and the nitrogen atom bound to each other, a strong sp2 covalent bonding is formed. In addition, weak van der waals force is present between two layers of boron nitride. Due to the difference in interatomic distance and in distance between tw...

Claims

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Application Information

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IPC IPC(8): C23C16/34B05D3/10B05D3/02C23C14/34B05D1/00B05D3/14B05D3/06B05D7/24C01B21/064B05D3/00
CPCC23C16/342C01B21/064B05D3/107B05D3/0254B05D3/0218B05D3/102C23C14/34B05D1/005B05D3/145B05D3/068B05D3/065B05D7/24B05D3/002C23C18/1204C23C18/1233C23C18/1241C23C18/1245C23C18/1275C23C18/1283C23C18/143C23C18/145B01J23/755
Inventor KIM, MYUNG JONGPARK, SUNGCHANCHO, HYUNJINBAE, SUKANGPARK, JIN-HYUNGKANG, JUNG HOKANG, SANG OOKLEE, CHANGHYUP
Owner KOREA INST OF SCI & TECH
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