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Method for preparing phase-changing film material nanometer wire

A technology of thin film materials and nanowires, applied in nanostructure manufacturing, nanotechnology, nanotechnology, etc., can solve problems such as long process cycle, high cost, and optimized process

Active Publication Date: 2007-10-10
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, there are unfavorable factors such as high cost, long process cycle, and optimized process.

Method used

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  • Method for preparing phase-changing film material nanometer wire
  • Method for preparing phase-changing film material nanometer wire
  • Method for preparing phase-changing film material nanometer wire

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Example 1: Ge 1 Sb 2 Te 4 Nanowire preparation, the steps are

[0023] (1) Preparation of the bottom electrode: on a (100) oriented Si wafer with a diameter of 3 inches, a W / Ti electrode was prepared by using a Balzers UMS500P ultra-high vacuum electron beam evaporator. Before the evaporation starts, vacuumize to make the background vacuum reach 5×10 -7 Pa, when evaporating, due to the increase of the cavity temperature and the gas released by the evaporation source itself, the vacuum degree drops to 3×10 -6 Pa. At this time, the temperature of the substrate is room temperature, and the growth rate of the film is controlled at ~1 Ȧ. First control the electron gun to evaporate the Ti source to obtain a 20nm Ti film, and then use the electron gun to evaporate the W source to obtain a 100nm thick W film.

[0024] (2) Ge 1 Sb 2 Te 4 Preparation of thin films: Ge prepared on the bottom electrode 1 Sb 2 Te 4 alloy layer. Japan Vacuum MLH-2306 Magnetron Sputtering...

Embodiment 2

[0028] In Example 1, (1) and (2) remain unchanged in the whole film preparation process, and only changing the annealing protective atmosphere can also achieve Ge 1 Sb 2 Te 4 Nanowire formation. For annealing under argon, the pressure is maintained at 1Pa.

[0029] Ge 1 Sb 2 Te 4 The length of the nanowires can be achieved by controlling the thickness of the film. If the thickness is 1000nm, the thickness of the nanowire can be adjusted by controlling the heating and cooling speed, and also by selecting the gas and controlling the air pressure. If the heating rate is 30°C / s and the pressure is 2Pa under the protection of nitrogen, the nanowires become thinner. Adjusting the annealing temperature can also change the Ge 1 Sb 2 Te 4 The thickness of the nanowire. As in Example 1, under the condition that other process parameters remain unchanged, the annealing temperature is changed to 600° C., and the nanowire becomes thinner obviously.

Embodiment 3

[0031] (1) In Example 1, (1) and (2) are unchanged in the whole film preparation process.

[0032] (2) Prepare Ag on the bottom electrode 11 In 12 Sb 26 Te 51 alloy layer. Japan Vacuum MLH-2306 Magnetron Sputtering Apparatus is adopted, the vacuum degree is 1.1×10 -5 Pa, filled with argon to 0.8Pa. The substrate temperature is room temperature, the RF magnetron sputtering power is 150W, the sputtering time is about 5min, and the thickness is 100nm.

[0033] (3) Perform rapid annealing heat treatment in a rapid heat treatment furnace, the heating rate is 10°C / s, and after 550°C, the holding time is 1500s. The whole annealing process was carried out under the protection of nitrogen, and the pressure was kept at 1Pa.

[0034] (4) SEM observation of Ag 11 In 12 Sb 26 Te 51 Nanowire formation. (similar to Figure 2)

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Abstract

The invention relates to a method of preparing phase change film material nano lines of a random access memory phase change random access memory (PRAM), belonging to microelectronic filed. Its character: successively depositing 20-100nm thick TiO2 / Ti and 50-300nm thick W on a 100nm oriented Si slice by evaporating method; then while the substrate is cooling, splashing a 50-300 nm thick phase change film material by magnetic control, finally under the protection of 0-51Pa nitrogen or argon gas, making fast thermal treatment on the film. The temperature rising speed is 10-30 deg.C / s, heat preserving time is 300-1500s, and annealing temperature higher than crystallizing temperature and lower than melting temperature. Under the protection of the same nitrogen gas, it can naturally cool to room temperature. By SEM observation of the sample, it can see the whole generating course of these lines. It can help to prepare a new nano-level phase change film material memory cell device, accordingly promoting the development of phase change memory.

Description

technical field [0001] The invention relates to a preparation method of a phase-change film material nanowire, which belongs to the manufacturing process of nanometer materials in microelectronics. Background technique [0002] Compared with the current dynamic random access memory (DRAM) and flash memory (FLASH), PRAM has obvious advantages: it is small in size, low in driving voltage, low in power consumption, fast in read and write speed, and non-volatile. PRAM is not only a non-volatile memory, but also may be made into multi-level storage, and it is suitable for ultra-low temperature and high temperature environments, and is resistant to radiation and vibration. Therefore, it will not only be widely used in daily portable electronic products, but also in aerospace and other fields. There are huge potential applications. Especially, its high speed and non-volatility just make up for the deficiency of FLASH and ferroelectric memory (FeRAM) in portable electronic products...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00G11C11/56H01B13/00B82B3/00
Inventor 宋志棠封松林
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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