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Low-temperature solvent heat growth method of cadmium telluride single-crystal

A growth method, cadmium telluride technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of crystal defects, high reaction temperature, complicated experimental operation, etc., achieve air stability, simple preparation process, and raw materials Easy to get effect

Inactive Publication Date: 2008-04-09
UNIV OF SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The present invention proposes a low-temperature solvothermal growth method for cadmium telluride single crystals, in order to overcome the disadvantages of the existing methods such as high reaction temperature, complicated experimental operation and easy crystal defects

Method used

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  • Low-temperature solvent heat growth method of cadmium telluride single-crystal
  • Low-temperature solvent heat growth method of cadmium telluride single-crystal
  • Low-temperature solvent heat growth method of cadmium telluride single-crystal

Examples

Experimental program
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Effect test

Embodiment 1

[0022] Put the pre-configured CdCl-containing 2 5mmol, TeO 2 5mmol, NaBH 4 10mmol of 40mL ammonia (25wt.%) mixed solution is charged into a reaction kettle with a polytetrafluoroethylene liner. After sealing, it rises from room temperature to 160°C within 45min, and the reaction stops after 7 days at 160°C. After heating, the single crystal was taken out after being naturally cooled to room temperature, washed with distilled water and absolute ethanol, and then dried in a vacuum oven at 60°C for 3 hours to obtain the product.

Embodiment 2

[0024] CdSO 4 Instead of CdCl in Example 1 2 As a cadmium source, with ammonia (25wt.%) as a solvent, take CdSO 4 , TeO 2 and NaBH 4 The amount of the substance is respectively 5mmol, 5mmol and 10mmol; This mixed solution is packed in the reaction kettle lined with polytetrafluoroethylene, after airtight, at 200 ℃ of constant temperature for 3 days, stop heating, and aftertreatment is identical with embodiment 1 thereafter, get the product.

Embodiment 3

[0026] use Na 2 TeO 3 Instead of TeO in Example 1 2 As a source of tellurium, with ammonia (25wt.%) as a solvent, take Na 2 TeO 3 , CdCl 2 and NaBH 4 The amounts of the substances were 5mmol, 5mmol and 10mmol respectively; the operation steps were the same as in Example 1, the reaction was kept at 180°C for 5 days, and then the heating was stopped. After natural cooling to room temperature, the single crystal was taken out and washed with distilled water and absolute ethanol. , and then dried in a vacuum oven at 60° C. for 3 hours to obtain the product.

[0027] The product was characterized by target X-ray powder diffraction (XRD) and scanning electron microscopy (SEM):

[0028] figure 1 The XRD pattern diagram of the product obtained in the above examples after being ground into powder is given, which shows that each diffraction peak can be indexed to the face-centered cubic phase CdTe, and no diffraction peaks of impurities are found. Based on this calculation, the un...

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Abstract

The invention relates the cadmium telluride single-crystal low-temperature solvent thermal growth method, comprising the following steps: dissolving the water-soluble cadmium salt, tellurium and reduced agent in the 20-30% ammonial solution, which is 30-45mL, the mole ratio of cadmium salt, tellurium and reduced agent being 1: 1: 2-3, sealing them at 160-200Deg.C, and reacting for 3 days. The invention can produce cadmium telluride single-crystal material at low temperature, without adopting vacuum or protective atmosphere condition. The method has the advantages of low cost and simple technology.

Description

Technical field: [0001] The invention belongs to the technical field of non-oxide single crystal preparation, in particular to a low-temperature solvothermal growth method of cadmium telluride single crystal. Background technique: [0002] Cadmium telluride (CdTe) single crystal, as a semiconductor material, has been widely used in room temperature X-ray, γ-ray detectors, electro-optical modulators and solar cells. How to realize the preparation method with simple process, low cost and mass production is the first problem to be faced. Holland's "Journal of Crystal Growth" (Journal of Crystal Growth, 1989, 98th volume, 595-609 pages and 1994, 138th volume, 168-174 pages) reported the adoption of mobile heating method (Traveling Heater Method, referred to as THM) from rich Te Preparation of II-VI semiconductor materials CdTe, Cd in the solution source 1-x Zn x Te and Hg 1-x Cd x Te crystals, but this method requires a high temperature gradient, high process costs, slow gr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/48C30B7/00
CPCC30B7/00
Inventor 谢毅李本侠
Owner UNIV OF SCI & TECH OF CHINA
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