CMOS technique compatible silicon optical waveguide preparation method

A technology of silicon photonics and waveguide, which is applied in the direction of optical waveguide lightguide, photolithographic exposure device, lightguide, etc., to achieve the effect of reducing transmission loss and reducing production cost

Inactive Publication Date: 2007-08-08
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Silicon optical waveguides can also be prepared by wet etching, but the corr

Method used

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Examples

Experimental program
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Effect test

Embodiment 1

[0023] Using a piece of SOI substrate whose top silicon layer is 1 μm thick, the SOI piece is first oxidized to form a silicon dioxide layer with a thickness of about 600 nm. Photolithography and etching are performed on the silicon dioxide layer, and a silicon oxide mask pattern is left at the position where the silicon optical waveguide needs to be prepared, and the width of the mask pattern is 1000 nm. Clean the masked SOI substrate, remove the photoresist, etc., and then further oxidize the SOI substrate until a 700nm silicon dioxide layer is thermally oxidized in the mask-free area, that is, a ridge area with a layer height of about Ridge silicon optical waveguide with 500nm, ridge height about 250nm, and ridge width about 500nm.

Embodiment 2

[0025] Using a piece of SOI substrate whose top silicon layer is 0.6 μm thick, a silicon dioxide layer with a thickness of about 1000 nm is grown on the SOI substrate by PECVD chemical vapor deposition method. Photolithography and etching are performed on the silicon dioxide layer, and a silicon oxide mask pattern is left at the position where the silicon optical waveguide needs to be prepared, and the width of the mask pattern is 1500 nm. Clean the SOI substrate after the mask is completed, remove the photoresist, etc., and then thermally oxidize the SOI substrate until a 1000nm silicon oxide layer is oxidized in the mask-free area, that is, a 500nm high and 500nm wide strip silicon optical waveguide.

Embodiment 3

[0027] Using a piece of SOI substrate whose top layer silicon is 2μm thick, a silicon nitride layer with a thickness of about 500nm is grown on the SOI substrate by PECVD method first. Photolithography and etching are performed on the silicon nitride layer, and a silicon nitride mask pattern is left at the position where the silicon optical waveguide needs to be prepared, and the width of the mask pattern is 3000 nm. Clean the SOI substrate after the mask is completed, remove the photoresist, etc., and then oxidize the SOI substrate until a 500nm silicon oxide layer is oxidized in the mask-free area. Silicon oxide selective etching is performed on the wafer to remove the silicon oxide layer, and then the SOI substrate is oxidized until a 500nm silicon oxide layer is oxidized in the maskless area. This step is repeated once more, that is, a ridge-shaped silicon optical waveguide with a ridge height of about 2000 nm, a ridge height of about 900 nm, and a ridge width of about 250...

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Abstract

The invention discloses a silicon waveguide preparation method compatible with CMOS process. On the top silicon layer of the SOI substrate, produce a layer of silicon dioxide, or silicon nitride, or silicon oxynitride mask layer, and process lithography and etching to the mask layer, to produce the waveguide mask pattern, and then process oxidation to the SOI substrate with the mask pattern, which can produce silicon waveguide. The invention uses the silicon oxidation characteristics, combining selective etching technology, and the provided silicon waveguide preparation method is fully compatible with the CMOS planar process, no longer needed silicon etching or corrosion, and other non CMOS standard processes.

Description

technical field [0001] The invention relates to a method for preparing an optical waveguide, in particular to a method for preparing a silicon optical waveguide compatible with a CMOS process. Background technique [0002] Silicon-based photonics technology is one of the important technical means to realize high-density photonic integration and high-speed optical interconnection. In recent years, silicon-based light source technology, silicon-based optical detection technology, and silicon-based optical information transmission and processing technology have developed rapidly. [0003] In order to develop silicon-based photonics technology, it is an important direction of current development to combine the mature silicon-based microelectronics technology to establish silicon-based photonics technology compatible with CMOS planar technology. At the current level of technology, people are making full use of CMOS technology, combined with the traditional processing technology ...

Claims

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Application Information

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IPC IPC(8): G02B6/13G02B6/136G02B6/12G03F7/20
Inventor 杨建义肖司淼郑伟伟江晓清郝寅雷周强李锡华王明华
Owner ZHEJIANG UNIV
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