Method of fabricating an electrochemical device using ultrafast pulsed laser deposition
An electrochemical and pulsed technology, used in vapor deposition manufacturing, electrochemical generators, electrode manufacturing, etc., can solve problems such as film quality degradation
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0050] Example 1: Formation of thin film
[0051] A 0.5 inch diameter stainless steel dish was washed with acetone to degrease its surface. A silicon wafer substrate having a diameter of 2 inches was etched for 30 s with 50% hydrofluoric acid to remove residual silicon dioxide, followed by washing with deionized water. Glue the stainless steel disk to the silicon wafer with silver epoxy glue.
[0052] Tin oxide thin films were deposited at different deposition temperatures ranging from room temperature (about 25°C) to about 700°C. The oxygen pressure of the chamber atmosphere was 1 mTorr. The distance between the target and the substrate was 5 cm, and the deposition time was 40 min. The laser source was a Clark-MXR CPA-2001 with a pulse width of 120 fs, a repetition rate of 1 kHz, and a pulse energy of 0.8 mJ. The target material was SnO purchased from SCI Engineered Materials (located in Columbus, Ohio). 2 Material.
Embodiment 2
[0053] Embodiment 2: the influence of deposition temperature on film structure
[0054] Figure 2 shows the XRD spectra of tin oxide films deposited at different temperatures and the stainless steel substrate itself. Figure 2 also shows that tin dioxide (SnO 2 ) JCPDS (Joint Committee for Powder Diffraction Standards, Joint Committee for Powder Diffraction Standards) reference map. Each peak with an indicated number represents SnO with lattice parameters a = b = 4.745 Ȧ and c = 3.190 Ȧ 2 rutile phase. Large peaks without an index number are attributed to the stainless steel substrate. As can be seen from this figure, the peak intensity generally increases with increasing temperature, which represents a change from amorphous phase (less than 400°C) to polycrystalline phase (400°C-700°C) growth. The characteristic peak broadening observed in the XRD patterns indicated that the films had a nanocrystalline structure. The change in the relative intensity ratio of peaks (110) an...
Embodiment 3
[0055] Example 3: Effect of Deposition Temperature on Film Stoichiometry
[0056] Figure 3 depicts the oxygen-tin atomic ratio ([O]:[Sn]) of the films as a function of deposition temperature for films grown on stainless steel and silicon substrates. The atomic ratio was found to vary from 1.5 to 2.0 as the deposition temperature varied from about 25°C to about 700°C. The results show that at a relatively low deposition temperature, the film is 2 ) The indeterminate form of the mixture. The proportion of SnO generally decreases at higher deposition temperatures, and when the temperature reaches about 600 °C, the stoichiometric composition is essentially SnO 2 . Based on the similarity of the stoichiometry of the films grown on the two substrates, the type of substrate (ie, stainless steel or silicon) did not appear to have a significant effect on the stoichiometry. As seen from above, the stoichiometry of the film can be controlled by varying the deposition temperature.
PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| particle size | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More