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High-pureness high-density sintered tungsten oxide material

A technology of tungsten oxide and density, applied in the direction of tungsten oxide/tungsten hydroxide, etc., can solve the problems of difficult sintering and dense, low self-diffusion coefficient of pure tungsten trioxide, affecting performance and optoelectronic characteristics, etc.

Inactive Publication Date: 2007-10-31
SHENZHEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since pure tungsten trioxide has a low self-diffusion coefficient and melts at about 1470°C, it is difficult to sinter dense
If sintering aids are added, the performance and photoelectric properties of the vapor-deposited tungsten oxide film will be affected by impurities

Method used

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  • High-pureness high-density sintered tungsten oxide material

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0011] Example 1: High-purity, high-density sintered tungsten trioxide

[0012] Trioxide powder (average particle size 17 microns) mixed with 1-5% (weight) polyethylene glycol (PEG) as a forming agent, added distilled water and wet milled in a ball mill for 24-96 hours, dried and sieved, at a pressure of 100-200MPa Press down to form, remove the molding agent, sinter in the silicon-aluminum rod furnace in the high-temperature furnace at 1110°C-1400°C in the air for 60-180 minutes at normal pressure, and cool with the furnace. The sintered tungsten trioxide produced in this way has a high purity Higher than 99%, density greater than 6.75g / cm 3 (relative density ≥ 94%)

example 2

[0013] Example 2: High-purity, high-density sintered tungsten trioxide

[0014] Trioxide powder (average particle size 10 microns), mixed with 1-5% (weight) polyethylene glycol (PEG) as a forming agent, added distilled water and wet milled in a ball mill for 24-96 hours, dried and sieved, at 100-200MPa Press molding under pressure, after removing the forming agent, sinter in the air at 1110°C-1400°C for 60-180 minutes at normal pressure in a high-temperature furnace, and cool with the furnace. The sintered tungsten trioxide obtained in this way has a purity higher than 99%. Target density greater than 6.82g / cm 3 (relative density≥95%)

example 3

[0015] Example 3: High-purity, high-density sintered blue tungsten oxide

[0016] Blue tungsten oxide is the intermediate oxide (β blue tungsten oxide WO 2.90 and gamma violet tungsten oxide WO 2.72 mixture. Blue tungsten oxide powder (average particle size 15 microns), mixed with 1-5% (weight) polyethylene glycol (PEG) as a forming agent, added distilled water and wet milled in a ball mill for 24-96 hours, dried and sieved, at 100 Compression molding under the pressure of -200MPa, after the molding agent is removed, sintering in the air at 1110°C-1400°C for 60-180 minutes at atmospheric pressure in a high-temperature furnace, and cooling with the furnace, the sintered blue tungsten oxide obtained in this way has a purity higher than 99%, density greater than 6.80g / cm 3 (relative density ≥ 94%)

[0017] The above three high-purity, high-density sintered tungsten oxides can be used as targets for tungsten oxide coating.

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Abstract

The invention discloses a high-purity and high-density sintered tungsten oxide material, which is characterized by the following: belonging to inorganic chemistry non-metallic element; making tungsten oxide burn densification without adding any sintering aid; making the purity of the tungsten oxide higher than 99% and the density not less than 6. 7g / cm3. This tungsten oxide can be used to target material of tungsten oxide film plating, panel display, photoelectric transformation, photochromism and so on domain.

Description

Technical field: [0001] The present invention belongs to inorganic chemical non-metallic elements; their compounds. Background technique: [0002] Tungsten oxide thin film is a widely researched functional material. It has excellent short-wave light transmittance, and the band gap can be easily adjusted by doping. Through ion implantation, ultraviolet photon irradiation, and gas molecule adsorption, its optical and electrical properties will change significantly. Therefore, it is used in optical glass, flat panel display, It has broad application prospects in photoelectric conversion, electrochromism, photochromism and other fields. [0003] The preparation methods of tungsten oxide thin films mainly include: physical vapor deposition, chemical vapor deposition, spray pyrolysis, anodic oxidation, electrolytic deposition, sol-gel and other methods. Among them, the tungsten oxide film prepared by physical vapor deposition is widely used because of its high bonding strength t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G41/02
Inventor 杨海涛高玲
Owner SHENZHEN UNIV
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