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Modified method for preparing single c-axle oriented zinc oxide film by electrochemical deposition process

A deposition process and electrochemical technology, which is applied in the preparation of ZnO thin films and single c-axis oriented ZnO thin films, can solve the problems of difficult to obtain dense ZnO thin films and control the nucleation density of thin films, and achieve strong single ultraviolet emission performance, Effect of high visible light transmittance, dense surface and cross-sectional structure

Active Publication Date: 2008-01-30
中国科学院上海硅酸盐研究所苏州研究院
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  • Application Information

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Problems solved by technology

However, so far, there are few reports on the galvanostatic deposition of ZnO thin films, and the control of the nucleation density at the initial stage of film growth cannot be achieved by using a single galvanostatic deposition method, so it is difficult to obtain dense or high-quality ZnO. film

Method used

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  • Modified method for preparing single c-axle oriented zinc oxide film by electrochemical deposition process
  • Modified method for preparing single c-axle oriented zinc oxide film by electrochemical deposition process
  • Modified method for preparing single c-axle oriented zinc oxide film by electrochemical deposition process

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Experimental program
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Embodiment 1

[0050] 1. Prepare zinc nitrate precursor solution. 2.97 g of Zn(NO 3 ) 2 .6H 2 O was dissolved in 100 ml of deionized water to obtain a clear and transparent 0.1 mol / L zinc nitrate precursor solution.

[0051] 2. Use ITO glass as the substrate. Process as follows:

[0052] (1) Ultrasonic washing in detergent solution for 3-5 minutes, and then fully rinsed with deionized water;

[0053] (2) After taking it out, ultrasonically clean it in acetone and alcohol for 3-5 minutes, and then rinse it with deionized water;

[0054] (3) Immerse the cleaned ITO film in dilute hydrochloric acid with a concentration of 5% by volume and corrode it for 10 seconds, rinse thoroughly with deionized water after taking it out, and dry it for later use.

[0055] 3. Film growth. Divided into the following four steps:

[0056] a. Connect the processed ITO substrate into the electrochemical deposition system as shown in Figure 1. The basic composition of the electrochemical deposition system i...

Embodiment 2

[0062] 1. Prepare zinc nitrate precursor solution. 0.297 g of Zn(NO 3 ) 2 .6H 2 O and 0.85 g NaNO 3 (sodium nitrate) was dissolved in 100 ml of deionized water to obtain a clear and transparent 0.1 mol / l zinc nitrate precursor solution, and the molar concentration ratio of zinc ions to nitrate ions was 1:11.

[0063] 2. Choose low-resistance single crystal silicon wafer as the substrate. Process as follows:

[0064] (1) At first, the hydrofluoric acid with a volume ratio of 1: 1 cleans the silicon chip under the condition of mechanical stirring for 5 minutes to remove the oxide layer on the surface of the silicon chip;

[0065] (2) After taking it out, ultrasonically clean it in acetone, alcohol, and deionized water for 5 minutes, then rinse it fully with deionized water after taking it out, and dry it for later use.

[0066] 3. Film growth. Divided into the following four steps:

[0067] a. Connect the processed substrate to the electrochemical deposition system, sele...

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Abstract

The invention relates to a method for preparing a single c axial directional ZnO film through a modified electrochemical deposition technology, the method is characterized in that: electrochemical pretreatment process and constant current deposition are combined, to form a ZnO crystallon layer with a same size as a crystal point on a pretreated substrate surface, so that the subsequently deposition ZnO film has a single c axial growing property. The method more particularly comprises a preparation of electro-deposition initial solution, cleaning and treatment of the substrate and film growing; and finally an electrochemical deposition system is adopted for film growing. The prepared ZnO film layer has the single c axial direction, high crystallization degree, and rather high permeation rate in visible light area, which can be used as a window layer of a film solar energy battery and applied to such fields as piezoelectricity, optoelectronics and gas-sensitive sensor, etc. The method has low cost, does not need vacuum environment or using organism and high temperature heating equipment, and the method is applied to the preparation of large area and scale film materials.

Description

technical field [0001] The invention relates to a method for preparing a single c-axis oriented ZnO thin film, more precisely, relates to a method for preparing a single c-axis oriented ZnO thin film by using an improved cathodic electrochemical deposition method. The prepared zinc oxide film can be applied to various optoelectronic devices such as window layers of thin film solar cells, ultraviolet light detectors, piezoelectric sensors, and gas sensors, and belongs to the field of semiconductor optoelectronic materials and nano energy materials. Background technique [0002] ZnO is a very important II-VI compound semiconductor material. Its forbidden band width is 3.37eV and its exciton binding energy is as high as 60meV. Such as ultraviolet light-emitting diodes, ultraviolet semiconductor lasers) and other fields have been widely used; at the same time, ZnO also has piezoelectric, gas-sensitive, photosensitive and other characteristics, in piezoelectric transducers, surfa...

Claims

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Application Information

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IPC IPC(8): C30B30/02
Inventor 高相东彭芳李效民于伟东
Owner 中国科学院上海硅酸盐研究所苏州研究院
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