Oxynitrides luminescent material and illuminating or exhibiting light source produced thereby

A technology of nitrogen oxide compounds and luminescent materials, which is applied in the directions of luminescent materials, energy-saving lighting, chemical instruments and methods, etc., can solve the problems that the luminous intensity of phosphors needs to be further improved, the mass production cannot be realized, and the synthesis process is complicated, and the realization is easy to achieve. The effect of mass production, wide excitation spectral range and high color rendering index

Inactive Publication Date: 2008-02-06
BEIJING ZHONGCUN YUJI TECH
View PDF0 Cites 17 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the luminous intensity of the phosphor needs to be further improved
In particular, the luminescent material can only be synthesized using metal and metal nitride raw materials that are not easy to store in the air, and a horizontal tube furnace is used for synthesis. Therefore, the synthesis process reported in this patent is complicated, difficult to control, and cannot be mass-produced.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Oxynitrides luminescent material and illuminating or exhibiting light source produced thereby
  • Oxynitrides luminescent material and illuminating or exhibiting light source produced thereby
  • Oxynitrides luminescent material and illuminating or exhibiting light source produced thereby

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] Example 1: Sr 1.90 Mg 0.06 Si 4.80 Al 0.20 o 0.20 N 7.80 :Eu 0.04 Preparation example of luminescent material (solid phase reaction method)

[0051] Weigh Sr according to the above composition 3 N 2 (43.1932 grams), Mg 3 N 2 (0.4671 g), Si 3 N 4 (52.3152 g), Al 2 o 3 (2.3822 g) and Eu 2 o 3 (1.6442 grams), after mixing and grinding in the glove box, pack the boron nitride crucible and roast in the tube furnace, feed N under normal pressure 2 / H 2 (95% / 5%), the flow rate is 2 liters / minute, with 0.1gSrF 2 It is used as a flux, and it is kept at 1400°C for 4 hours. The obtained powder is ground and then fired at a high temperature under the same conditions to promote the development of grains. The obtained luminescent material was pulverized, washed with hydrochloric acid to remove impurities, and dried to obtain 100 g of the red luminescent material of the present invention. Its X-ray diffraction pattern is shown in Figure 1, it can be seen from the fi...

Embodiment 2-7

[0053] The corresponding raw materials are weighed according to the chemical formula composition and stoichiometry listed in each embodiment in Table 1, and the preparation process is the same as in Example 1, wherein the reaction flux used is the chloride of A, and the luminous intensity of the obtained luminescent material is shown in Table 1.

[0054] Table 1 Chemical formulas and luminescent properties of Examples 1-7 (excitation wavelength is 450nm)

[0055] Example

Embodiment 8

[0056] Example 8: Sr 1.90 Mg 0.06 Si 4.80 Al 0.20 o 0.20 N 7.80 :Eu 0.04 Preparation example of luminescent material (pressure sintering method)

[0057] Weigh SrCO according to the above composition 3 (53.5782 grams), MgO (0.573 grams), Si 3 N 4 (42.6797 g), Al 2 o 3 (1.9434 g) and Eu 2 o 3 (1.3413 grams), after adding n-hexane mixed grinding evenly, pack into boron nitride crucible and carry out roasting in pressure furnace, feed the N of 10 atmospheric pressures 2 , kept at 1500° C. for 6 hours, and the resulting luminescent material was crushed, pickled to remove impurities, and dried to obtain 100 g of the red luminescent material of the present invention. From the point of view of the preparation process, the synthesis method is simple, the raw material cost is low and the chemical stability is good, and no mixing operation in a glove box is required, so that low-cost and mass production can be realized. Its X-ray diffraction pattern is shown in Figure 3, i...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
emission peakaaaaaaaaaa
Login to view more

Abstract

The present invention relates to oxy-nitride luminescent material and its manufactured illumination and display light source. The molecular formula of oxy-nitride luminescent material is A2B5-xOxN8-x to Euy, wherein, A is alkali metal, one or a plurality of alkaline-earth metal; B is one or a plurality of 3-5 family elements contains at least Si; 0 is less than or equal to x and x is less than or equal to 1; 0.005 is less than or equal to y, and y is less than or equal to 1.0. The luminescent material is motivated by motivation light sources such as ultraviolet ray, near ultraviolet ray or blue light as LED, the high light red color light with wave length at 600 to 680 nm can be motivated. The present invention also relates to the preparation method of the oxy-nitride luminescent material. The present invention of luminescent material can make novel white light LED light source cooperated with ultraviolet ray, near ultraviolet ray or blue light LED as well as other luminescent material such as yttrium aluminum garnet type luminescent material, or can make red LED light source matched with ultraviolet ray and near ultraviolet ray.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a nitrogen oxide luminescent material, a preparation method thereof, and an illumination or display light source made from the same. Background technique [0002] GaN-based light-emitting diode (Light-Emitting Diode) is a new type of light-emitting device known as solid-state lighting in the 21st century. It has the advantages of small size, power saving, long life, no mercury that pollutes the environment, high efficiency, and low maintenance. , can be widely used in various lighting facilities, including indoor lighting, traffic signals / indicators, car taillights / headlights, outdoor super-large screens, display screens and advertising screens, etc., and can replace all kinds of bulbs and Fluorescent trend. This new type of green light source will definitely become a new generation of lighting system, which has extensive and far-reaching significance for energy saving, environment...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/59H01L33/00H01L33/50
CPCY02B20/181Y02B20/00
Inventor 蔺向阳鲍鹏
Owner BEIJING ZHONGCUN YUJI TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products