Method for preparing bismuth telluride alloy thin film by employing cosputtering sedimentation method

A technology of alloy thin film and deposition method, which is applied in the field of preparing bismuth telluride alloy thin film, can solve the problems of unobtainable thin film, deviation of target material composition, and failure to meet the needs of production, etc., and achieves simple method, reliable product quality, reproducible good sex effect

Inactive Publication Date: 2008-04-30
CHINA NAT ACAD NANOTECH & ENG
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Problems solved by technology

However, when bismuth telluride is used as the sputtering target, due to the different sputtering rates of bismuth (Bi) and tellurium (Te), and the difference in the saturation vapor pressure of Bi and Te by 4-5 orders of magnitude, so that the sputtering deposited There is a large deviation between the compositio

Method used

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Examples

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Example Embodiment

[0011] Example: A method for preparing a bismuth telluride alloy thin film by co-sputtering deposition is implemented on a magnetron sputtering apparatus, and the process steps are as follows:

[0012] 1) 4 high-purity tellurium sheets with a diameter of 12mm and a thickness of 1mm are uniformly distributed and pasted on a high-purity bismuth target with a diameter of 60mm, and the center of the tellurium sheet is located on a ring with a diameter of 30mm with the center of the bismuth target as the center. The composite target formed by pasting is used as a co-sputtering target, and the tellurium sheet is fixed on the sputtering target table with the tellurium sheet facing the substrate table;

[0013] 2) Using single crystal silicon wafer (100) as the film substrate;

[0014] 3) Evacuate the vacuum chamber to a vacuum degree higher than 3×10 -5 Pa, adjust the gate valve, then fill the vacuum chamber with high-purity argon, and maintain the argon at 1.0 Pa, place the Si substrate...

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Abstract

The invention relates to a method for preparing bismuth telluride alloy membrane through a co-sputtering and sedimentation method. The invention is implemented on a magnetism control sputtering instrument, a high purity bismuth sheet is stuck on a high purity bismuth target through conducting glue, and the compound target is taken as the sputtering target material to perform co-sputtering; the single crystal silicon chip is taken as the membrane lining bottom. The invention has the technology parameters that: the bottom vacuum degree is higher than 1.0*10-3Pa, the working argon gas pressure is 0.2 to 3Pa, the target base distance is 4 to 10cm, the base sheet table is rotated for 5 to 15 circles per minute, the membrane lining bottom temperature is 100 to 300 DEG C, the sputtering power source power is 20 to 100W, and the annealing temperature is 200 to 300 DEG C. The invention has the advantages that the sedimentation membrane components can be easily adjusted by changing the size and quantity of the sticking target on the standard target material; in particular, to the sputtering compound target with larger deposited membrane component difference, and the exploration of the optimum component doping quantity, the method is simple, the feasibility is strong, the product quality is reliable, and the reproducibility is good.

Description

(1) Technical field [0001] The invention relates to a method for preparing a bismuth telluride alloy thin film, in particular to a method for preparing a bismuth telluride alloy thin film by a co-sputtering deposition method. (2) Background technology [0002] Thermoelectric devices made of semiconductor thermoelectric materials have the advantages of miniaturization, light weight, no noise, no use of heat transfer medium, and no pollution. They have great application prospects in the fields of thermoelectric power generation and refrigeration. Bismuth telluride (Bi 2 Te 3 ) compounds and their solid solution alloys are one of the earliest and most mature thermoelectric materials studied. The best thermoelectric figure of merit of bulk materials at room temperature is about 1, and most thermoelectric cooling elements currently use such materials. Due to the low thermoelectric figure of merit of the bismuth telluride bulk material, the thermoelectric conversion efficiency o...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/06C23C14/54C23C14/58
Inventor 范洪涛
Owner CHINA NAT ACAD NANOTECH & ENG
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