RF micro-inductance with suspending structure and its making method

A technology of suspended structure and manufacturing method, which is applied in the field of microelectronics, can solve the problems that the coupling capacitance between the coil and the substrate cannot be effectively reduced, the micro-plating mold with high aspect ratio cannot be formed, and the working frequency is low, so as to achieve easy mass production, The effect of high inductance and high operating frequency

CN101170002AInactive Publication Date: 2008-04-30SHANGHAI JIAO TONG UNIV

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Patent Information

Authority / Receiving Office: CN · China
Current Assignee / Owner: SHANGHAI JIAO TONG UNIV
Publication Date: 2008-04-30
Estimated Expiration: Not applicable · inactive patent

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Abstract

A radio frequency microinductor with a suspension structure in the field of microelectronic technology and a manufacturing method thereof. In the radio frequency micro-inductor of the suspended structure, a support body is provided between the metal spiral coil and the substrate, one end of the support body is connected to the metal spiral coil, the other end of the support body is connected to the substrate, and at the junction of the metal spiral coil and the lead wire A connecting body is provided, and the two ends of the connecting body are respectively connected with the metal spiral coil and the lead wire. The process is as follows: substrate substrate cleaning treatment, rejection of positive resist, exposure and development, etching, making double-sided overlay alignment marks; deposition of Ti / Cu / Ti bottom layer; Ti oxidation; rejection of positive resist, exposure and development, Electroplating, glue removal; SU-8 glue removal, pre-baking, exposure, post-baking, development, electroplating; sputtering Ti / Cu bottom layer; SU-8 glue removal, pre-baking, exposure, post-baking, development, electroplating; removal SU-8 glue and bottom layer. The loss of the micro-inductor of the invention is greatly reduced, the performance is much higher than that of the silicon-based planar micro-inductor with the same parameters, and the Q value is greater than 45.

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Description

technical field

[0001] The invention relates to a device in the technical field of microelectronics and a manufacturing method thereof, in particular to a radio frequency micro-inductor with a suspended structure and a manufacturing method thereof. technical background

[0002] RF-MEMS (Radio Frequency-Micro-Electro-Mechanical Systems) devices are a new research field that has emerged in Micro-Electro-Mechanical Systems (MEMS) technology in recent years, that is, RF-MEMS is to use MEMS technology to make various radio frequency devices or systems for wireless communication. RF-MEMS devices and systems can be widely used in interstellar wireless communications, advanced mobile communications such as mobile phones, global positioning system GPS, microwave radar antennas, etc. Because RF-MEMS devices have many advantages, and can finally realize the high integration of passive devices and ICs, it is possible to develop a system integrated chip (SOC) that integrates information ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine

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