Low dielectric constant and low temperature sintering microwave ceramic medium and its preparing process

Abstract

The invention discloses low dielectric constant low temperature sintering microwave medium ceramic. The ceramic material contains [(Zn1-xMgx)O-ySiO2+awt TiO2]+bwt [zLi2O-(1-z)b2O3], wherein, 0 is less than and equal to x which is less than and equal to 1, 0.5 is less than and equal to y which is less than and equal to 1, 0 is less than and equal to a which is less than and equal to 20, 0 is less than and equal to b which is less than and equal to 15, and 0 is less than z which is less than 1; the invention also discloses the preparing method of the ceramic material. The invention adopts Li20-B2O3 complex so as to impel (Zn1-xMgx)O-ySiO2 ceramic sintering temperature to be reduced below 960 DEG C from 1200 DEG C; the invention has good microwave medium capacities, and the dielectric constant is 6 to 10. The quality factor Qf is more than 12000GHz, and the frequency temperature coefficient can be adjusted according to the requirements. The invention having low cost, stable technique and good reproduction quality can be used in the design and the production of multi-layer frequency elements such as multi-layer medium antenna, balun, varied filters and so on, and great value on industry is provided.

Description

technical field [0001] The invention relates to a low-permittivity low-temperature sintered microwave dielectric ceramic applied to chip-type multilayer microwave components and a preparation method thereof, belonging to the technical field of material science. Background technique [0002] In order to meet the integration and miniaturization requirements of modern communication equipment, microwave dielectric devices, as one of the main components, are also in urgent need of miniaturization and light weight. An important way to achieve this goal is to use multilayer integrated circuit technology (MLIC for short). In the design of multilayer chip microwave components, in order to reduce its manufacturing cost, Cu or Ag with high conductivity is generally used as the internal electrode, and the melting points of Cu and Ag are 1064 ° C and 961 ° C, respectively. Therefore, it is necessary to develop Ag or Cu co-fired low-temperature sintered microwave dielectric ceramics. Cu...

AI Technical Summary

Problems solved by technology

In order to reduce the sintering temperature of this ceramic system, the inventor published "A New system ofLow Temperature Sintering ZnO-SiO" in "Japanese Journal of Applied physics" 2006, 45 volumes 5A period 4143-4145 pages 2 Dielectric Ceramics" published in Li 2 CO 3 -Bi 2 o 3 As an additive to reduce ZnO-SiO 2 Technical scheme of ceramic sintering temperature, 5wt% Li 2 CO 3 -4wt% Bi 2 o 3 can make ZnO-SiO 2 The ceramic sintering temperature drops to 910°C, and its dielectric properties are: ε r 6.65, the quality factor Qf value is 33,000GHz, the frequ