Unlock instant, AI-driven research and patent intelligence for your innovation.

Pattern forming method and method for forming multilayer wiring structure

A pattern and wiring pattern technology, applied in conductive pattern formation, multilayer circuit manufacturing, coating, etc., can solve problems such as fine wiring and achieve high-resolution effects

Inactive Publication Date: 2008-05-28
FUJIFILM CORP
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, even in this method, it is difficult to form wiring with a relatively thin line width while maintaining good adhesion to the substrate.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Pattern forming method and method for forming multilayer wiring structure
  • Pattern forming method and method for forming multilayer wiring structure
  • Pattern forming method and method for forming multilayer wiring structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0170] The following examples will be given to illustrate the present invention in detail, but the present invention is not limited to these examples.

Synthetic example 1

[0171] (Synthesis Example 1: Synthesis of Compound A)

[0172] Compound A was synthesized through the following two steps.

[0173] 1. Step 1 (synthesis of compound a)

[0174] Dissolve 24.5 g (0.12 mol) of 1-hydroxycyclohexyl phenyl ketone in a mixed solvent of 50 g DMAc and 50 g THF, and slowly add 7.2 g (0.18 mol) of NaH (60% oil suspension) in an ice bath. 44.2 g (0.18 mol) of 11-bromo-1-undecene (95%) was dripped there, and it reacted at room temperature. After 1 hour the reaction was complete. The reaction solution was poured into ice water and extracted with ethyl acetate to obtain a mixture containing Compound a as a yellow solution. 37 g of this mixture were dissolved in 370 mL of acetonitrile, and 7.4 g of water were added. 1.85 g of p-toluenesulfonic acid monohydrate was added and stirred at room temperature for 20 minutes. The organic phase was extracted with ethyl acetate and the solvent was evaporated off. Compound a was separated by column chromatography (...

Embodiment 1～4

[0189] Monomers 1 to 4 having the following compositions were dissolved in a mixed solution of 1-methoxy-2-propanol / methyl ethyl ketone (1 / 1 weight ratio) to prepare a 10 wt % solution. Then, the above-mentioned photoinitiator-bonded glass substrate was immersed in this solution, and exposed for 1 minute with an exposure machine (UVX-02516S 1LP01, manufactured by Usio Electric Co., Ltd.). After exposure, it was washed well with acetone and pure water. Graft-treated substrates 1 to 4 were obtained as described above.

[0190] [Composition (molar ratio) of the monomers constituting the graft polymer]

[0191] Monomer composition 1: Perfluorooctylethyl methacrylate (FMAC) (50%) / Dimethacrylamide (50%)

[0192] Monomer composition 2: FMAC (50%) / hydroxyethyl methacrylate (25%) / dimethylacrylamide (50%)

[0193] Monomer composition 3: FMAC (50%) / acrylamide (25%) / 2-vinylpyridine (25%)

[0194] Monomer composition 4: FMAC (50%) / acrylamide (40%) / glycidyl methacrylate (10%)

[0195] ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
diameteraaaaaaaaaa
surface tensionaaaaaaaaaa
Login to View More

Abstract

The present invention provides a pattern forming method comprising (I) providing a graft polymer directly chemically bonded to a substrate on a surface, a step of producing a graft polymer for the substrate, (II) by a droplet discharge method , according to a predetermined pattern shape, on the surface where the above-mentioned graft polymer is generated, the particle dispersion liquid arrangement step of distributing the dispersion liquid droplets formed by dispersing the particles in the liquid (dispersion medium) and (III) from the liquid droplets of the above-mentioned arrangement A particle pattern forming step in which a liquid (dispersion medium) is evaporated in a medium, and a layer composed of particles is formed on the above-mentioned substrate according to a predetermined pattern shape.

Description

technical field [0001] The present invention relates to a method for forming a pattern by a droplet discharge method, and a method for forming a multilayer wiring structure by applying the method, and more specifically, it relates to arranging particles with various functions on a substrate in a pattern shape to form a A film-like patterning method, and a method for forming a multilayer wiring structure that can be used to form conductive film wiring, electro-optical devices, electronic appliances, non-contact card media, and thin film transistors. Background technique [0002] Methods of disposing various functional materials in a desired pattern on a solid surface to locally realize functionality have been studied. Among them, the method of disposing conductive materials on a solid surface to form high-resolution wiring or electrodes has attracted the most attention. [0003] In order to manufacture wiring structures used in electronic circuits or integrated circuits, for...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H05K3/10H05K3/46C08F2/00
CPCH05K2203/013C08F259/08H05K2203/1168C08F265/00C09D151/003H05K3/4664H05K3/4611H05K3/4069H05K2203/1173C08L51/003H05K2203/095H05K3/1208H05K3/125C08F291/00H05K3/386Y10T156/1052C08L2666/14C08L2666/02
Inventor 川村浩一
Owner FUJIFILM CORP