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Fluorescent silicon nitride based nano thread and preparation thereof

A silicon nitride-based and wire silicon nitride-based technology, which is applied in the field of silicon nitride-based nanowires and its preparation, can solve the problems that have not yet been reported on silicon nitride-based nanowires.

Inactive Publication Date: 2008-06-25
UNIV OF SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] So far, no report has been found on silicon nitride-based nanowires with strong luminescence properties

Method used

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  • Fluorescent silicon nitride based nano thread and preparation thereof
  • Fluorescent silicon nitride based nano thread and preparation thereof
  • Fluorescent silicon nitride based nano thread and preparation thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] (1) Preparation of α-Si by existing technology 3 N 4 Nanowires:

[0025] The specific preparation process is as described in the paper "Synthesis and characterization of siliconcarbide, silicon oxynitride and silicon nitride nanowires" (Journal of Material Chemistry 2002, 12, 1606-1611) in the "Material Chemistry" magazine, that is, by heating the mixture of silica gel and simple silicon, Gas-phase SiO is generated, and α-Si is obtained by gas-solid growth in flowing ammonia at 1350 °C 3 N 4 Nanowires, the length and diameter of nanowires can be controlled by controlling airflow, temperature, etc., so that the diameter is about 100-200 nanometers and the length is 100-300 microns;

[0026] (2) Dissolve 0.5 millimoles of europium oxide in 10 milliliters of nitric acid solution with a concentration of 0.4 mol / liter, heat to 60 degrees, and after completely dissolving, evaporate to dryness at 100 degrees to obtain rare earth nitrate Eu(NO 3 ) 3 ;

[0027] (3) The pre...

Embodiment 2

[0033] (1) Preparation of α-Si by existing technology 3 N 4 0.01 moles (1.4 grams) of nanowires are used to make the diameter about 300-400 nanometers and the length 500-800 microns. The specific preparation process is the same as in Example 1.

[0034] (2) Dissolve 0.5 millimoles of dysprosium oxide in 10 milliliters of nitric acid solution with a concentration of 0.4 mol / liter, heat to 60 degrees, after completely dissolving, evaporate to dryness at 100 degrees to obtain rare earth nitrate Dy(NO 3 ) 3 :

[0035] (3) 0.01 mol (1.4 g) α-Si 3 N 4 nanowires with 0.1 mmol (0.0348 g) of Dy(NO 3 ) 3 Mix and dissolve in 10 ml of methanol / water (volume ratio 1:1) solution, and disperse by ultrasonic (power 400W, frequency 40KHZ) for 20 minutes;

[0036] (4) Then transfer the mixed slurry to a rotary vacuum dryer for drying at 60° C. for 20 minutes.

[0037] (5) Transfer to a BN crucible after drying, and add about 0.028 grams of B in advance at the bottom 2 o 3 powder. Rai...

Embodiment 3

[0040] Concrete preparation process is the same as embodiment 2, but does not add B in step (5) 2 o 3 powder to obtain a nanowire with a Dy metal ion solid solution as the luminescent center; the nanowire also emits blue light and yellow light with a maximum luminous wavelength of 482nm and 578nm under ultraviolet light (shown as emitting white light), and the excitation and emission spectra are the same as Figure 7 Similar, compared with the situation of the boron nitride thin film protective layer in embodiment 2, its intensity has decreased by 40%, but compared with the nanowires without metal ion solid solution as the luminescent center in the prior art, its intensity still increases More than 5 times.

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Abstract

The invention relates to a luminescent material, in particular to a silicon nitride based nano wire and preparing method thereof. The fluorescigenic silicone nitride based nano wire is of alpha- Si3N4 phase, rare earth metal ions are contained in silicon nitride based unit cell interstices of the nano wire, thereby forming the nano wire taking metal ions sosoloid as luminescent center, or the surface of the nano wire is covered with a kubonit protective layer. The rare earth metal ions are any one or two or more elements in Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. The maximum luminous wavelength of a fluorescence spectrum of the invention is 420-680nm, and the maximum excitation wavelength of an excitation spectrum is 250-450nm. Because of the protection of the kubonit, the invention not only has high fluorescent quenching temperature and high luminous intensity, but also the material deterioration and luminance is reduced smaller when an excitation source is excited, thereby improving the service life. The invention is hopeful to be widely applied in micro-electronics, optics, illumination and other fields.

Description

technical field [0001] The invention relates to light-emitting materials, in particular to silicon nitride-based nanowires and a preparation method thereof. Background technique [0002] One-dimensional materials, including nanowires, nanotubes, nanorods, etc., have a wide range of application prospects in the field of catalysis, environmental protection and other functional material assembly due to their microscopic one-dimensional structure and large specific surface area. In recent years, they have become the main research hotspots. one. On the other hand, silicon nitride ceramics have also received extensive attention in the past three decades. In recent years, a focus of research is silicon nitride nanowires. In addition to many advantages of silicon nitride ceramics, silicon nitride nanowires also have good elasticity and bending properties. Silicon nitride nanowire is an excellent semiconductor and an excellent candidate material for the preparation of microelectro...

Claims

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Application Information

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IPC IPC(8): C30B29/38C30B29/62C09K9/00C09K11/79
Inventor 徐鑫
Owner UNIV OF SCI & TECH OF CHINA
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