Fluorescent silicon nitride based nano thread and preparation thereof

A silicon nitride-based and linear silicon nitride-based technology is applied in the field of silicon nitride-based nanowires and their preparation, and can solve problems such as reports on silicon nitride-based nanowires that have not yet been found.
CN101205629BInactive Publication Date: 2011-11-02UNIV OF SCI & TECH OF CHINA
0 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
UNIV OF SCI & TECH OF CHINA
Publication Date
2011-11-02
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention relates to a luminescent material, in particular to a silicon nitride based nano wire and preparing method thereof. The fluorescigenic silicone nitride based nano wire is of alpha- Si3N4 phase, rare earth metal ions are contained in silicon nitride based unit cell interstices of the nano wire, thereby forming the nano wire taking metal ions sosoloid as luminescent center, or the surface of the nano wire is covered with a kubonit protective layer. The rare earth metal ions are any one or two or more elements in Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. The maximum luminous wavelength of a fluorescence spectrum of the invention is 420-680nm, and the maximum excitation wavelength of an excitation spectrum is 250-450nm. Because of the protection of the kubonit, the invention not only has high fluorescent quenching temperature and high luminous intensity, but also the material deterioration and luminance is reduced smaller when an excitation source is excited, thereby improving the service life. The invention is hopeful to be widely applied in micro-electronics, optics, illumination and other fields.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to light-emitting materials, in particular to silicon nitride-based nanowires and a preparation method thereof. Background technique

[0002] One-dimensional materials, including nanowires, nanotubes, nanorods, etc., have a wide range of application prospects in the field of catalysis, environmental protection and other functional material assembly due to their microscopic one-dimensional structure and large specific surface area. In recent years, they have become the main research hotspots. one. On the other hand, silicon nitride ceramics have also received extensive attention in the past three decades. In recent years, a focus of research is silicon nitride nanowires. In addition to many advantages of silicon nitride ceramics, silicon nitride nanowires also have good elasticity and bending properties. Silicon nitride nanowire is an excellent semiconductor and an excellent candidate material for the preparation of microelectro...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More