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Pyroelectric lithium tantalite LiTa3O8 thin film and preparation technique thereof

A lithium tantalate and a preparation process technology are applied in the field of pyroelectric lithium tantalate LiTa3O8 thin film and its preparation, which can solve the problems of high manufacturing cost of detectors, complex system structure and the like, achieve low equipment and manufacturing costs, and solve crystallization problems. High temperature, good consistency

Inactive Publication Date: 2008-09-17
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Lithium tantalate LiTa of new composition provided by the invention 3 o 8 Thin film is a kind of non-refrigerated pyroelectric thin film. The infrared detector based on it can work at room temperature without low-temperature refrigeration. High device manufacturing cost and complex system structure

Method used

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  • Pyroelectric lithium tantalite LiTa3O8 thin film and preparation technique thereof
  • Pyroelectric lithium tantalite LiTa3O8 thin film and preparation technique thereof
  • Pyroelectric lithium tantalite LiTa3O8 thin film and preparation technique thereof

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Embodiment

[0025] Using high-purity metal lithium and tantalum ethoxide as raw materials, using analytically pure ethylene glycol methyl ether as a solvent, LiTa was prepared under the protection of an argon atmosphere. 3 o 8 Sol, diluted with ethylene glycol monomethyl ether to a concentration of 0.1mol.L -1 , the sol was spin-coated on Pt / Ti / SiO 2 / Si(100) substrate, a wet film is formed, and the wet film is placed in a rapid heat treatment furnace for annealing and crystallization in an oxygen atmosphere. Repeat the above process to prepare amorphous LiTa with the required thickness 3 o 8 thin film, its X-ray diffraction curve is as follows image 3 shown. Scanning electron microscope SEM test found that the film is flat, uniform, no cracks, and Pt / Ti / SiO 2 / Si(100) substrate is well bonded, and the film thickness is about 1 μm, as shown in Figure 4.

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PUM

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Abstract

The invention relates to a pyroelectric lithium tantalate (LiTa3O8) film and a sol-gel production method thereof. The pyroelectric lithium tantalate (LiTa3O8) film is novel in composition, has lower leakage current than the common lithium tantalate (LiTa3) film, and can bear higher polarization voltage. Beside of non-cooled pyroelectric property, the lithium tantalate (LiTa3O8) film has good ferroelectric, piezoelectric, photoelectric and nonlinear optical properties. The lithium tantalate (LiTa3O8) film can be used to produce functional device based on one or more properties thereof. The sol-gel production method of the lithium tantalate (LiTa3O8) film comprises the following steps: using platinum-gold or silicon single crystal as substrate, high-purity metallic lithium and tantalum ethoxide as raw materials and ethylene glycol monomethyl ether as solvent; preparing a LiTa3O8 sol in the presence of argon protective gas, spin-coating on the substrate to obtain a LiTa3O8 wet film, and rapidly annealing the wet film to obtain LiTa3O8 film with a thickness of 0.2-5 Mum.

Description

technical field [0001] The invention relates to a pyroelectric lithium tantalate LiTa 3 o 8 Thin film and its preparation process, especially refers to the preparation of lithium tantalate LiTa by sol-gel method 3 o 8 Thin film process. Background technique [0002] The performance indicators of uncooled pyroelectric infrared detectors, such as current response, voltage response and detectivity, are inversely proportional to the thickness of the pyroelectric infrared sensitive element. The thinner the sensitive element (in the order of μm), the better the device performance . At present, pyroelectric infrared sensors are almost all made of crystal materials. Due to the limitations of device geometry and thickness, it is difficult to manufacture pyroelectric crystal sheets with a thickness of 1-2 μm or less, thus limiting pyroelectricity. Application of transistor materials in high-performance pyroelectric infrared detection. [0003] In recent years, inorganic pyroelec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/495C04B35/624
Inventor 张德银黄大贵李金华李坤董政
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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